Cypress Semiconductor Corp CY7C1545KV18-450BZXI

Overview

CY7C1545KV18-450BZXI from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 450 MHz clock operation, 2.0-cycle read latency, DDR interfaces on independent read/write ports, and HSTL I/O supporting 1.4–1.8 V VDDQ. It delivers 900 MT/s data throughput in high-speed networking buffers and packet processing engines.

For engineers reviewing the CY7C1545KV18-450BZXI datasheet, CY7C1545KV18-450BZXI pinout, CY7C1545KV18-450BZXI application, or CY7C1545KV18-450BZXI equivalent, this device serves as a synchronous burst SRAM optimized for concurrent read/write traffic in FPGA-attached line cards, telecom switching fabrics, and real-time protocol accelerators where bus turnaround elimination and deterministic latency are critical.

Technical Context

The CY7C1545KV18-450BZXI implements a true dual-port QDR II+ architecture with physically separate read and write data paths-no shared bidirectional bus-enabling simultaneous access without arbitration delay. Its PLL-synchronized echo clocks (CQ/CQ) align output timing to system capture logic, while DOFF pin control allows runtime switching between 2-cycle (QDR II+) and 1-cycle (QDR I) read latency modes.

All address and control inputs are registered on K/K rising edges; data outputs are edge-aligned to CQ/CQ. The device uses synchronous self-timed writes and supports byte-selectable writes via four BWS signals (BWS0–BWS3), enabling partial-word updates without disturbing adjacent bytes in 36-bit words.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with IDT72T36150L10BG and IS61WV102436BLL-150BLI, CY7C1545KV18-450BZXI uniquely delivers 72-Mbit density with 2-cycle deterministic latency, on-die impedance calibration, and hardware-selectable QDR I/II+ modes-making it the only option meeting full-duplex 900 MT/s requirements in modern packet-processing architectures.

Availability

CY7C1545KV18-450BZXI is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, FPGA-based protocol accelerators, and real-time monitoring systems requiring stable component supply across multi-year production cycles.

Supply support for CY7C1545KV18-450BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1545KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure where bus turnaround elimination and precise timing alignment are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1545KV18-450BZXI?

The DOFF (PLL Disable) pin is an active-low control that disables the internal Phase-Locked Loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. When held HIGH (typically via 10 kΩ pull-up), the PLL is enabled, supporting full QDR II+ operation at 450 MHz with 2-cycle latency. This pin allows hardware-level mode selection without firmware intervention.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (typically 50 Ω) to ground, enabling on-die calibration of CQ, CQ, and Q[35:0] output driver impedance. This sets output strength to 0.2 × RQ (e.g., 10 Ω for 50 Ω reference), matching common PCB trace impedances and minimizing reflections. Leaving ZQ unconnected or tied to GND violates specification and causes undefined drive strength, risking signal integrity failure above 200 MHz.

Can CY7C1545KV18-450BZXI perform partial writes without reading-modify-write cycles?

Yes. Four independent byte-write select signals (BWS0–BWS3) allow selective updating of individual 8-bit segments within each 36-bit word. Each BWS controls nine bits: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. When a BWS is deasserted (HIGH), its corresponding byte remains unchanged during the write cycle-no read-modify-write sequence is required.

What is the role of CQ and CQ echo clocks in system timing design?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They are sourced from the same internal PLL path as the data outputs and provide a timing reference for capturing Q[35:0] at the receiver. Because CQ/CQ track data path delays, they eliminate the need for manual PCB trace length matching or external delay elements-simplifying high-speed layout and improving timing margin by up to 200 ps compared to using K/K directly.