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Cypress Semiconductor Corp CY7C1548KV18-400BZI

Part No.:
CY7C1548KV18-400BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1548KV18-400BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:844

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Product details

Overview

CY7C1548KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.0-cycle read latency, and 400 MHz clock operation. It uses HSTL I/O, dual input clocks (K/K), echo clocks (CQ/CQ), and QVLD for precise high-speed data capture in memory subsystems of networking switches and baseband processors.

For engineers reviewing the CY7C1548KV18 datasheet, CY7C1548KV18 pinout, CY7C1548KV18 application, or CY7C1548KV18 equivalent, key selection criteria include DDR II+ timing compliance, 1.8 V core / 1.4–1.8 V I/O supply support, PLL-enabled 2-cycle latency mode, and FBGA-165 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture where address and control signals are latched on rising edges of K, while write data is registered on both K and K edges. Read data bursts two 18-bit words per access, aligned to K and K rising edges, with output timing referenced to echo clocks CQ/CQ.

The device integrates a PLL for accurate data placement and supports dual operational modes: DDR II+ (DOFF = HIGH, 2-cycle latency, up to 450 MHz) and DDR I-compatible mode (DOFF = LOW, 1-cycle latency, ≤167 MHz). All I/O uses HSTL-18 signaling with programmable output impedance via ZQ calibration.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization)
Max Clock Frequency 400 MHz - defines maximum sustained bandwidth of 1.44 GB/s (18-bit × 2 words × 400 MHz)
Read Latency 2.0 clock cycles - fixed pipeline delay from LD assertion to first valid data on Q[17:0]
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - enables interoperability with 1.5 V and 1.8 V memory interfaces
Core Supply VDD = 1.8 V ± 0.1 V - strict regulation required for stable SRAM cell operation
Output Signaling HSTL Class I - ensures signal integrity at >400 MHz with controlled slew and termination matching
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout optimized for high-speed routing and thermal dissipation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares physical pins for read output and write input; driven on K/K rising edges; tri-stated automatically after deselected reads
K / K Differential clock inputs Rising edges latch all synchronous inputs (A, R/W, LD, BWS); K drives first word, K drives second word in burst
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K; used by system logic to capture Q[17:0] without skew compensation
QVLD Valid data indicator Asserted synchronously with CQ/CQ edges to signal that DQ[17:0] contains valid burst data
DOFF PLL disable control Active-low pin: HIGH enables DDR II+ mode (2-cycle latency); LOW forces DDR I mode (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration reference Connects to external resistor to ground to tune CQ/CQ/Q[17:0] output drive strength to match 50 Ω trace impedance

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 2× versus single-word SRAMs, lowering EMI and routing congestion
Integrated PLL with echo clocks Eliminates need for external delay-locked loops or board-level trace length matching for data capture
Programmable I/O voltage (1.4–1.8 V) Supports migration across JEDEC HSTL-18 and HSTL-15 interfaces without redesigning power delivery
Synchronous self-timed writes Removes external write pulse timing constraints; internal logic guarantees full write completion before next cycle
JTAG 1149.1 boundary scan Enables production test coverage of high-speed memory interconnects without dedicated test fixtures

Applications

Networking Switch Fabric Wireless Baseband Processor Cache

Use Scenario: High-throughput packet buffering in Layer 2/3 switching ASICs requiring deterministic latency and zero wait-state access.

IC Role / Device Role / Timing Role: Primary data buffer SRAM interfacing directly to SerDes-linked switch fabric controllers with 400 MHz DDR timing.

Use Value: 2.0-cycle latency and echo-clock-synchronized outputs eliminate setup/hold violations at 900 MT/s, enabling full-rate line-speed forwarding.

Use Scenario: Real-time FFT and channel estimation buffers in LTE/5G baseband SoCs where burst-aligned data reduces DMA overhead.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for DSP cores, accessed via tightly coupled DDR II+ interface with QVLD-driven handshaking.

Use Value: Two-word burst delivers consecutive IQ samples in one cycle pair, cutting memory transaction count by 50% versus single-word SRAMs.

High-Speed Test Equipment Memory Avionics Data Acquisition Buffer

Use Scenario: Deep-pattern storage in automated test equipment capturing multi-gigasample waveforms at sustained 400 MHz clock rates.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to precision clock generators with jitter-tolerant echo clock recovery.

Use Value: CQ/CQ outputs provide deterministic sampling windows independent of PCB trace skew, improving measurement repeatability.

Use Scenario: Radiation-tolerant telemetry buffering in flight control systems requiring soft-error immunity and guaranteed timing under thermal stress.

IC Role / Device Role / Timing Role: Safety-critical SRAM buffer with neutron soft error immunity, powered by regulated 1.8 V core and monitored VDDQ.

Use Value: Specified neutron soft error rate (SER) and extended temperature range (–40°C to +85°C) meet DO-254 Level A requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-15JIN Quad-data-rate (QDR) interface, 15 ns access time, 3.3 V core/I/O, no PLL or echo clocks Used in legacy FPGA-based systems with simpler timing closure; lacks DDR II+ burst efficiency Select when migrating from older QDR designs and system clock < 200 MHz; avoid for new 400 MHz+ designs
IS61WV102418BLL-10BLI Single-data-rate (SDR) asynchronous SRAM, 10 ns access, 3.3 V, no burst or clocked interface Deployed in microcontroller-based control planes where deterministic worst-case latency matters more than bandwidth Choose only for cost-sensitive, low-frequency control applications; incompatible with DDR II+ timing protocols

Compared with AS7C362000B-15JIN and IS61WV102418BLL-10BLI, CY7C1548KV18 delivers 2.9× higher effective bandwidth at 400 MHz with burst-aligned data, eliminates external DLLs via integrated PLL and echo clocks, and supports modern 1.8 V system architectures - making it the sole option for new high-speed memory subsystems.

Availability

CY7C1548KV18 is available at Aetrix Electronics and suitable for networking switch fabric, wireless baseband processor cache, and high-speed test equipment requiring stable component supply, long-term lifecycle assurance, and Pb-free manufacturing compliance.

Supply support for CY7C1548KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1548KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-processing and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1548KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL. When asserted LOW, the device reverts to DDR I timing with 1-cycle read latency and maximum 167 MHz operation. When HIGH, it enables full DDR II+ mode with 2-cycle latency and up to 450 MHz clocking. Pull-up to VDDQ via ≤10 kΩ resistor is required for normal operation.

How does the ZQ pin affect signal integrity in high-speed designs?

ZQ connects to an external resistor to ground (typically 240 Ω) to calibrate the output driver impedance of DQ[17:0], CQ, and CQ pins to 0.2 × RQ ≈ 48 Ω. This matches standard 50 Ω PCB traces, minimizing reflections and ensuring clean eye diagrams at 900 MT/s. Leaving ZQ unconnected or tied to GND violates specification and degrades timing margins.

Can CY7C1548KV18 operate with different VDDQ and VDD voltages simultaneously?

Yes - VDD is strictly 1.8 V ± 0.1 V for the core, while VDDQ may be independently set between 1.4 V and 1.8 V to match the host interface's I/O standard (e.g., 1.5 V HSTL or 1.8 V HSTL-18). This dual-supply flexibility allows seamless integration into mixed-voltage SoC platforms without level-shifting circuitry.

What is the role of QVLD in system-level timing validation?

QVLD is a synchronous output that asserts coincident with the rising edges of CQ and CQ, indicating that the corresponding DQ[17:0] bits contain valid data from the current burst. Unlike static timing margins, QVLD provides dynamic, cycle-accurate validity signaling - enabling FPGA or ASIC logic to sample data safely even under PVT variation, without conservative guard-banding.

CY7C1548KV18-400BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1548KV18-400BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1548KV18-400BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1548KV18-400BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1548KV18-400BZI is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1548KV18-400BZI?

For technical support, including CY7C1548KV18-400BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1548KV18-400BZI requirements.

6.How does Aetrix verify that CY7C1548KV18-400BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1548KV18-400BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1548KV18-400BZI meets industry standards.

7.What is the process for return or replacement of CY7C1548KV18-400BZI?

All CY7C1548KV18-400BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1548KV18-400BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1548KV18-400BZI part is unused and in its original packaging.

Return procedure for CY7C1548KV18-400BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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