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Cypress Semiconductor Corp CY7C1548KV18-450BZC

Part No.:
CY7C1548KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1548KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,928

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Product details

Overview

CY7C1548KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.0-cycle read latency, and 450 MHz clock operation. It delivers 900 Mbps data transfer via double-data-rate interface, uses HSTL I/O with 1.8 V core/1.4–1.8 V I/O supply, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and telecom buffer applications.

For engineers reviewing the CY7C1548KV18 datasheet, CY7C1548KV18 pinout, CY7C1548KV18 application, or CY7C1548KV18 equivalent, key selection criteria include DDR II+ timing compliance, 165-ball FBGA package compatibility, DOFF-controlled latency mode switching (2.0-cycle vs. 1-cycle), and JTAG 1149.1 test access support for system-level validation.

Technical Context

The device implements a synchronous pipelined SRAM core with dual-edge DDR interface: address and control signals are latched on rising edges of K clock only, while write data is registered on both K and K rising edges, and read data is driven synchronously on both K and K rising edges. Internal organization comprises two 2M × 18 arrays enabling concurrent burst access.

It features an integrated PLL for accurate data placement, echo clocks CQ/CQ aligned to K/K for simplified receiver timing, and QVLD signal edge-aligned to CQ/CQ to indicate valid output data windows. The DOFF pin selects between DDR II+ (2-cycle latency, up to 450 MHz) and DDR I mode (1-cycle latency, ≤167 MHz), with distinct AC timing requirements per mode.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 4M × 18 (two 2M × 18 arrays)
Max Clock Frequency 450 MHz - enables 900 Mbps DDR data rate
Read Latency 2.0 clock cycles (DOFF = HIGH); 1 cycle (DOFF = LOW)
Supply Voltages VDD = 1.8 V ± 0.1 V; VDDQ = 1.4 V to 1.8 V - supports mixed-voltage I/O interfaces
I/O Standard HSTL Class I inputs, variable-drive HSTL outputs - ensures signal integrity at >400 MHz
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density memory subsystems
Special Functions Integrated PLL, echo clocks (CQ/CQ), QVLD, ZQ impedance calibration, JTAG 1149.1 TAP

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus 18-bit DDR data path; sampled on K/K rising edges for writes, driven on K/K rising edges for reads
K / K Differential input clocks K captures address/control; both K and K register write data and drive read data - defines DDR timing reference
CQ / CQ Output echo clocks Free-running, K-synchronized clocks for external data capture - eliminates per-device skew compensation
QVLD Valid data indicator Edge-aligned with CQ/CQ; asserts during valid data windows - enables reliable latch timing in FPGA/ASIC receivers
DOFF PLL disable control Active-LOW; disables internal PLL to switch to DDR I mode (1-cycle latency, ≤167 MHz) - provides backward compatibility
ZQ Impedance calibration reference Connects to external resistor to ground; tunes CQ/CQ/DQ output impedance to 0.2 × RQ - matches PCB trace impedance
LD Load strobe Sampled on K rising edge; initiates burst transaction - defines address and R/W direction for next two words
BWS[1:0] Byte write select Active-LOW controls DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enables partial-word writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller logic
DDR II+ with 2.0-cycle latency Delivers deterministic 450 MHz operation with guaranteed setup/hold margins - eliminates dynamic latency tuning in ASIC/FPGA designs
Integrated echo clocks (CQ/CQ) Eliminates need for board-level clock forwarding or deskew circuitry - reduces routing complexity and interconnect jitter
QVLD synchronized to echo clocks Provides unambiguous data validity window referenced to CQ/CQ edges - enables single-cycle capture in high-speed receivers
ZQ impedance calibration Compensates for process/voltage/temperature drift in output driver impedance - maintains signal integrity across operating conditions

Applications

High-Speed Network Packet Buffer Telecom Line Card Data Cache

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in 10G/25G line cards with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port burst SRAM acting as ingress/egress FIFO buffer; K/K clocks synchronized to SERDES reference; CQ/CQ used for FPGA data capture.

Use Value: 2-word burst + 450 MHz clock enables full packet buffering at wire speed without pipeline stalls or external arbitration logic.

Use Scenario: Caching real-time voice/video payload in multi-channel TDM-over-IP gateways requiring sub-10 ns timing precision.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM providing deterministic read/write access; QVLD aligns with FPGA sampling clock to eliminate metastability risk.

Use Value: Integrated PLL and echo clocks ensure <±50 ps data-eye alignment across temperature - meets GR-1089 EMC and ITU-T G.823 jitter specs.

Baseband Processing Memory Radar Signal Processing Buffer

Use Scenario: Temporary storage of OFDM symbol data between FFT and channel estimation blocks in LTE/5G baseband ASICs.

IC Role / Device Role / Timing Role: Burst-access SRAM interfaced to ASIC's DDR controller; DOFF pin tied HIGH for 2-cycle latency mode to match processing pipeline depth.

Use Value: HSTL I/O and 1.4 V VDDQ reduce switching power by 35% vs. SSTL-18 - critical for thermally constrained RF modules.

Use Scenario: Capturing and buffering high-resolution chirp samples in phased-array radar front-ends operating at 400+ MSPS.

IC Role / Device Role / Timing Role: Low-latency memory buffer feeding FPGA-based beamforming engines; ZQ calibration maintains 50 Ω output match over -40°C to +105°C.

Use Value: 165-ball FBGA footprint allows dense placement adjacent to ADC/DAC; 1.8 V core minimizes noise coupling into analog sections.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256PFS-15BIN QDR-II, 36-Mbit (2M × 18), 300 MHz max, no integrated PLL or echo clocks Lacks CQ/CQ and QVLD; requires external clock forwarding and capture logic Select when cost sensitivity outweighs timing margin needs and system clocking infrastructure already supports QDR-II timing
IS61WV102418BLL-15BLI Async SRAM, 18-Mbit (512K × 36), 15 ns access, single-data-rate, no burst or DDR interface No clock domain crossing support; incompatible with DDR II+ controller interfaces Only viable for legacy systems where DDR II+ features are unused and bandwidth demand ≤1.2 Gbps

Compared with AS7C36256PFS-15BIN and IS61WV102418BLL-15BLI, CY7C1548KV18 uniquely delivers 450 MHz DDR II+ operation with integrated echo clocks and QVLD-enabling direct FPGA interface without external timing compensation, while its 72-Mbit density supports deeper buffering in space-constrained telecom and defense platforms.

Availability

CY7C1548KV18 is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card caches, baseband processing memories, and radar signal processing buffers requiring stable component supply and long-term industrial availability.

Supply support for CY7C1548KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1548KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin?

The DOFF pin is an active-low PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH (or pulled up via ≤10 kΩ resistor), the PLL is enabled for DDR II+ mode with 2.0-cycle latency and up to 450 MHz clocking. This pin directly determines timing mode and frequency capability.

How does ZQ calibration work and what external component is required?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system data bus. A precision resistor (RQ) must be connected between ZQ and ground; the device sets output impedance to 0.2 × RQ. For example, a 240 Ω resistor yields 48 Ω driver impedance. ZQ must never be left floating or tied to GND - doing so disables calibration and risks signal integrity failure.

Can CY7C1548KV18 operate with only the K clock, or is K mandatory?

K is mandatory for full DDR II+ functionality. While address and control signals use only K, write data registration and read data driving require both K and K rising edges. Omitting K breaks DDR timing: write data cannot be latched correctly, and read data will not appear on both clock edges. The device will not operate reliably in DDR mode without both differential clocks present and properly terminated.

What is the role of QVLD, and how should it be used in FPGA interface design?

QVLD is a synchronous output that pulses HIGH during valid data windows on DQ[17:0], edge-aligned precisely with CQ and CQ. In FPGA designs, QVLD should be used as the enable signal for the input register capturing DQ data - not as a clock. This avoids metastability and ensures sampling occurs only when data meets setup/hold relative to CQ/CQ, eliminating need for manual timing closure of wide DDR buses.

CY7C1548KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1548KV18-450BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1548KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1548KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1548KV18-450BZC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1548KV18-450BZC?

For technical support, including CY7C1548KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1548KV18-450BZC requirements.

6.How does Aetrix verify that CY7C1548KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1548KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1548KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1548KV18-450BZC?

All CY7C1548KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1548KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1548KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1548KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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