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Cypress Semiconductor Corp CY7C1550KV18-450BZC

Part No.:
CY7C1550KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1550KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,135

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Product details

Overview

CY7C1550KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 450 MHz clock operation, 2.0-cycle read latency (when DOFF = HIGH), and HSTL I/O interface supporting 1.4–1.8 V VDDQ. It delivers 900 Mbps data transfer via double-data-rate outputs synchronized to K/K clocks and is used in high-bandwidth packet buffering for network switches and telecom line cards.

For engineers reviewing the CY7C1550KV18 datasheet, CY7C1550KV18 pinout, CY7C1550KV18 application, or CY7C1550KV18 equivalent, key selection criteria include burst depth (2-word), echo clock timing (CQ/CQ alignment), QVLD validity signaling, PLL-enabled latency mode control (DOFF), and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1550KV18 implements a synchronous pipelined architecture where all address, control, and data signals are registered on rising edges of complementary K and K clocks. Read and write operations initiate on K's rising edge, with data output driven on both K and K edges-enabling true DDR behavior without external strobes.

Its internal 2M × 36 array is split into two 1M × 36 banks, supporting byte-write select (BWS[3:0]) for granular 9-bit writes. The integrated PLL ensures precise data placement relative to echo clocks CQ/CQ, while DOFF pin toggles between DDR II+ (2-cycle latency) and DDR I (1-cycle latency) modes-altering timing margins and max frequency (≤167 MHz in DDR I mode).

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 2M × 36 - supports wide-data-path buffering with minimal chip count in 36-bit bus systems.
Max Clock Frequency 450 MHz - enables 900 MT/s effective throughput; requires matched trace lengths for K/K skew ≤ 25 ps.
Read Latency 2.0 clock cycles (DOFF = HIGH) - deterministic timing window for data capture aligned to CQ/CQ edges.
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - interoperable with 1.5 V and 1.8 V memory subsystems without level shifters.
Output Interface HSTL Class I - provides controlled-impedance drive matching 50 Ω transmission lines; ZQ pin calibrates output strength.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch layout optimized for high-density routing and thermal dissipation in multi-layer boards.
Power Supply Core VDD = 1.8 V ± 0.1 V - low-voltage core reduces dynamic power; separate VDDQ allows I/O voltage scaling.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges; outputs edge-aligned to CQ/CQ with QVLD assertion.
K / K Differential clock inputs Complementary clocks driving all synchronous registers; K initiates transactions; both clock edges used for data transfer.
CQ / CQ Output echo clocks Free-running, phase-matched copies of K/K; simplify system-level data capture without per-device delay tuning.
QVLD Valid data indicator Asserted synchronously with CQ/CQ rising edges; signals when DQ[35:0] carries valid read data-critical for latch timing.
DOFF PLL disable control Active-Low input; when grounded, disables PLL and reverts device to DDR I timing (1-cycle latency, ≤167 MHz).
BWS[3:0] Byte write select Four active-Low signals enabling independent 9-bit writes; BWS0–BWS3 map to D[8:0], D[17:9], D[26:18], D[35:27].
ZQ Impedance calibration reference Connects to external 240 Ω resistor to GND; sets output driver impedance to 0.2 × RQ ≈ 48 Ω for 50 Ω trace matching.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs-lowers EMI and simplifies controller address sequencing.
Integrated PLL with DOFF control Enables runtime switching between DDR II+ (high-speed, 2-cycle latency) and DDR I (lower-frequency, 1-cycle latency) modes.
Echo clock outputs (CQ/CQ) Eliminates need for board-level strobe routing; allows source-synchronous capture across multiple SRAMs using common clock tree.
QVLD validity signal Provides unambiguous, clock-aligned indication of valid output data-removes setup/hold uncertainty in high-speed latching.
HSTL I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature; eliminates manual output strength trimming during production test.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-throughput, low-latency buffer interfacing directly to MAC controllers via 36-bit DDR bus.

Use Value: 2-word burst + 450 MHz clock sustains ≥3.2 Gbps sustained bandwidth-matching 10GbE line rates without bottlenecks.

Use Scenario: Temporary storage of voice-over-IP (VoIP) payload packets in carrier-grade DSLAMs and OLTs.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as jitter buffer and packet reassembly memory with deterministic 2-cycle read response.

Use Value: QVLD and echo clocks enable reliable data capture at 900 Mbps-even under PVT variation-reducing packet loss in real-time traffic.

High-Speed Test Equipment Memory Radar Signal Processing Buffer

Use Scenario: Capturing high-resolution digital waveform samples from ADCs in automated test systems.

IC Role / Device Role / Timing Role: Burst-access memory staging raw sensor data prior to FPGA-based FFT or pattern analysis.

Use Value: Byte-write select (BWS[3:0]) allows selective update of partial 36-bit words-preserving unmodified sample metadata during streaming.

Use Scenario: Intermediate storage of digitized RF return pulses in phased-array radar front-ends.

IC Role / Device Role / Timing Role: Low-jitter, pipeline-aligned memory feeding DSP cores with time-critical pulse sequences.

Use Value: PLL-controlled data placement ensures sub-100 ps timing margin between CQ edge and QVLD assertion-meeting strict radar timing budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3652 36-Mbit (1M × 36), 250 MHz max clock, no PLL, fixed 1.5-cycle latency Limited to ≤2.25 Gbps bandwidth; lacks echo clocks and QVLD-requires external strobe generation Select when cost sensitivity outweighs bandwidth needs and system clocking infrastructure already supports non-DDR-II+ timing.
ISSI IS61WV102436B 36-Mbit (1M × 36), asynchronous interface, 15 ns access, no DDR or burst capability No clocked interface; incompatible with DDR controller logic; unsuitable for >100 MHz burst transfers Only viable for legacy designs requiring pin-compatible replacement of older async SRAMs-not a functional substitute for CY7C1550KV18.

Compared with IDT72T3652 and IS61WV102436B, the CY7C1550KV18 uniquely delivers 72-Mbit density with DDR II+ timing, echo clocks, and programmable latency-enabling higher throughput and simpler system-level timing closure in new high-speed designs.

Availability

CY7C1550KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply, long-lifecycle support, and guaranteed FBGA-165 packaging consistency.

Supply support for CY7C1550KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The CY7C15xxKV18 series targets high-bandwidth, low-latency buffering in systems demanding deterministic DDR timing-especially where echo clocks and QVLD simplify high-speed memory interface design.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-Low PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and a maximum operating frequency of 167 MHz. When HIGH (or pulled up), the PLL is active, enabling DDR II+ operation at up to 450 MHz with 2.0-cycle latency. This dual-mode capability allows backward compatibility with legacy DDR I controllers while supporting newer high-speed designs.

How do CQ and CQ echo clocks improve system-level timing?

CQ and CQ are free-running output clocks synchronized to the input K/K clocks, with minimal skew to corresponding DQ outputs. They eliminate the need for board-level strobe routing or per-device delay calibration, allowing source-synchronous data capture across multiple SRAMs using a common clock tree. This reduces timing closure complexity and improves robustness across voltage and temperature variations in high-speed systems.

Can CY7C1550KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The device explicitly supports VDDQ = 1.4 V to VDD (1.8 V), including 1.5 V operation. This allows interoperability with 1.5 V memory controllers or FPGAs without level-shifting circuitry. The HSTL Class I output drivers automatically adapt drive strength based on VDDQ, and ZQ calibration maintains impedance match across this range.

What is the role of the ZQ pin, and how must it be connected?

ZQ is an impedance calibration reference pin that tunes the output driver strength of DQ, CQ, and CQ pins. It must be connected to a 240 Ω resistor to ground-setting nominal output impedance to 48 Ω (0.2 × 240 Ω) for optimal 50 Ω PCB trace matching. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~30 Ω); it must never be left floating or tied to GND.

CY7C1550KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1550KV18-450BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1550KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1550KV18-450BZC reliable?

The price and inventory of CY7C1550KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1550KV18-450BZC is usually 5 days.

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CY7C1550KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1550KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1550KV18-450BZC?

For technical support, including CY7C1550KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1550KV18-450BZC requirements.

6.How does Aetrix verify that CY7C1550KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1550KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1550KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1550KV18-450BZC?

All CY7C1550KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1550KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1550KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1550KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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