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Cypress Semiconductor Corp CY7C15632KV18-400BZC

Part No.:
CY7C15632KV18-400BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C15632KV18-400BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:568

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Product details

Overview

CY7C15632KV18-400BZC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with 4 M × 18 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and QVLD data-valid indicator - enabling high-throughput, low-latency memory access in packet-forwarding engines and network line cards.

For engineers reviewing the CY7C15632KV18-400BZC datasheet, CY7C15632KV18-400BZC pinout, CY7C15632KV18-400BZC application, or CY7C15632KV18-400BZC equivalent, key selection criteria include its 4-word burst architecture, HSTL I/O compatibility (VDDQ = 1.4–1.8 V), PLL-based timing control, and depth expansion support via RPS/WPS port selects.

Technical Context

The device implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed 20-bit address bus. All inputs (A, D[17:0], RPS, WPS, BWS[1:0], DOFF, ZQ) are registered on rising edges of K or K clocks, and all outputs (Q[17:0], CQ, CQ, QVLD) are edge-aligned to those clocks. The internal PLL enables precise 2.5-cycle read latency when DOFF is HIGH.

It supports concurrent read/write transactions without bus turnaround, delivers 1000 MT/s effective data rate via DDR signaling, and maintains full data coherency across bursts. Depth expansion is implemented using RPS and WPS signals to enable independent operation of up to four 4 M × 18 devices in a bank.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4 M × 18), enabling 8 MB of high-speed buffer storage per device
Max Clock Frequency 400 MHz - sets system bandwidth ceiling at 1.44 GB/s (4 words × 18 bits × 400 MHz)
Read Latency 2.5 cycles (DOFF = HIGH); reduces pipeline stalls in burst-intensive traffic shaping
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V HSTL logic families
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and signal integrity for high-speed routing
Data Valid Indicator QVLD output synchronized to CQ/CQ - eliminates need for external strobe alignment logic
Impedance Tuning ZQ pin supports dynamic output impedance calibration to 0.2 × RQ - improves signal integrity on long traces

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input Latched on rising edges of K/K; supports byte-selectable writes via BWS[1:0]
Q[17:0] Synchronous read data output DDR-aligned to K/K; tristated automatically when RPS is deasserted
RPS / WPS Read/Write Port Select Active-low enables independent port activation for depth expansion or interleaved access
K / K Positive/Negative input clocks Both drive register clocks; only rising edges used - simplifies clock tree design
CQ / CQ Echo clocks Free-running, phase-matched to K/K - eliminates setup/hold timing margin loss at receiver
QVLD Data validity indicator Edge-aligned with CQ/CQ - directly gates capture latch in FPGA/ASIC receiver logic
DOFF PLL disable control LOW forces QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables full QDR II+ performance
ZQ Output impedance calibration reference Connects to external resistor to ground; tunes CQ/Q[17:0] drive strength to match PCB trace Z₀

Key Features

Feature Design Value
Separate Read/Write Ports Eliminates data bus turnaround overhead - enables true concurrent access without arbitration delay
Four-Word Burst Architecture Transfers 72 bits per 2-clock cycle - halves required address bus toggling vs. single-word SRAMs
HSTL Class I Compatible I/O Supports 1.4–1.8 V VDDQ - allows direct interface to Stratix IV/V, Virtex-6, and ASIC HSTL receivers
Integrated PLL with Echo Clocks Enables deterministic 2.5-cycle latency and eliminates receiver-side deskew circuitry
JTAG 1149.1 Test Access Port Enables boundary-scan testing of SRAM interconnects without requiring functional test vectors

Applications

High-Speed Packet Buffering Network Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10/40/100 GbE switch fabric ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level buffering between MAC and traffic manager, synchronized to line-rate clocks.

Use Value: Concurrent read/write avoids backpressure during bursty traffic; 2.5-cycle latency aligns with typical scheduler pipeline depth.

Use Scenario: Providing shared memory for multiple TCAM lookup results and forwarding table entries in modular routers.

IC Role / Device Role / Timing Role: High-bandwidth memory resource accessed by parallel search engines and forwarding processors.

Use Value: 1.44 GB/s throughput sustains >100 MPPS lookups; echo clocks simplify timing closure on 16-layer backplanes.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding channelized IQ samples and FFT intermediate buffers in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced to multi-core DSP clusters via HSTL buses.

Use Value: 4-word burst matches natural FFT radix-4 data flow; DOFF-controlled latency scaling supports variable clock domains.

Use Scenario: Storing stimulus/response patterns in high-pin-count ATE systems requiring deterministic read/write timing.

IC Role / Device Role / Timing Role: Synchronous pattern generator memory with jitter-immune echo clocking for sampling alignment.

Use Value: QVLD + CQ synchronization guarantees ±5 ps data valid window - meets <100 ps setup/hold requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-400BIN 2.5 V core, 400 MHz, ×32 config, no echo clocks or QVLD Requires external strobe generation and impedance tuning; limited to lower-voltage I/O systems Choose if legacy 2.5 V infrastructure exists and echo clock simplification is not required
IS61WV102418BLL-400BLI 3.3 V supply, 400 MHz, ×18, asynchronous reset, no PLL or burst mode Lacks QDR II+ burst efficiency and concurrent access - reduces effective bandwidth by ~40% Prefer only for cost-sensitive designs where latency tolerance exceeds 5 cycles and DDR timing is not needed

Compared with AS7C362000B-400BIN and IS61WV102418BLL-400BLI, CY7C15632KV18-400BZC delivers deterministic 2.5-cycle latency, eliminates external strobe logic via QVLD/CQ, and sustains full bandwidth under concurrent load - critical for real-time packet processing.

Availability

CY7C15632KV18-400BZC is available at Aetrix Electronics and suitable for high-speed packet buffering, network line card memory, telecom baseband processing, and ATE pattern memory requiring stable component supply and long-term lifecycle support.

Supply support for CY7C15632KV18-400BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II+ SRAM portfolio, including reliability validation, long-term manufacturing, and technical documentation continuity.

This device belongs to Infineon's high-performance synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in networking, telecom, and test equipment where bus turnaround overhead and timing uncertainty must be eliminated.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW, forcing the device into QDR I mode with 1-cycle read latency and a maximum operating frequency of 167 MHz. When DOFF is HIGH, the PLL enables full QDR II+ operation at up to 400 MHz with 2.5-cycle latency. This dual-mode capability allows designers to reuse the same footprint across different speed grades and timing budgets without hardware changes.

How does the ZQ pin calibrate output impedance, and what external component is required?

The ZQ pin connects to an external precision resistor (RQ) tied to ground, enabling on-die calibration of CQ, CQ, and Q[17:0] output drivers to 0.2 × RQ. For example, a 60 Ω resistor sets driver impedance to 12 Ω. This compensates for process/voltage/temperature variation and ensures consistent signal integrity across voltage rails and board layouts - no external termination resistors are needed on data or echo clock lines.

Can CY7C15632KV18-400BZC support depth expansion, and how is it implemented?

Yes - depth expansion is supported using RPS (Read Port Select) and WPS (Write Port Select) signals. Each device in a bank responds only when its RPS/WPS is asserted, allowing up to four 4 M × 18 devices to form a 16 M × 18 memory space. Address bits beyond A[19:0] are decoded externally to generate RPS/WPS, enabling independent read/write access to each device without contention or arbitration logic.

What is the role of QVLD, and how does it differ from traditional RDY or VALID signals?

QVLD is a synchronous, edge-aligned output that indicates when Q[17:0] data is valid relative to CQ/CQ - not K/K. Unlike asynchronous READY signals, QVLD requires no setup/hold margin adjustment at the receiver and eliminates the need for phase-aligned capture latches. It directly enables single-register capture in FPGAs or ASICs, reducing timing closure effort and improving jitter tolerance in high-speed systems.

CY7C15632KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C15632KV18-400BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C15632KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C15632KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-400BZC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C15632KV18-400BZC?

For technical support, including CY7C15632KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-400BZC requirements.

6.How does Aetrix verify that CY7C15632KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C15632KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C15632KV18-400BZC?

All CY7C15632KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C15632KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C15632KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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