Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C15632KV18-400BZXC

Part No.:
CY7C15632KV18-400BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C15632KV18-400BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,867

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C15632KV18-400BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with 4 M × 18 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency (DOFF = HIGH), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and QVLD data-valid indicator - deployed in high-speed packet buffering for network line cards and telecom switching fabric.

For engineers reviewing the CY7C15632KV18-400BZXC datasheet, CY7C15632KV18-400BZXC pinout, CY7C15632KV18-400BZXC application, or CY7C15632KV18-400BZXC equivalent, key selection criteria include burst depth (4-word), I/O supply range (1.4 V to 1.8 V), HSTL-compatible interfaces, PLL-enabled timing accuracy, and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. All inputs (RPS, WPS, BWS[1:0], A[19:0], D[17:0]) are registered on rising edges of K/K clocks, and all outputs (Q[17:0], QVLD, CQ/CQ) are edge-aligned to those clocks. The internal PLL enables precise 2.5-cycle read latency timing when DOFF is HIGH.

Depth expansion is supported via RPS/WPS port-select signals, enabling multi-chip memory banks without external arbitration. Echo clocks CQ and CQ are free-running, phase-aligned replicas of K/K used for source-synchronous data capture; ZQ pin enables programmable output impedance matching to system trace impedance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4 M × 18), enabling 9 MB of ultra-low-latency buffer storage per device
Max Clock Frequency 400 MHz - supports 800 MT/s effective throughput per port with DDR interface
Read Latency 2.5 cycles (DOFF = HIGH); reduces pipeline stalls in burst-intensive traffic shaping
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - allows interoperability with 1.5 V or 1.8 V system rails
Interface Standard HSTL Class I inputs and variable-drive HSTL outputs - ensures signal integrity at >400 MHz with controlled slew rates
Package 165-ball FBGA (13 × 15 × 1.4 mm), 0.8 mm ball pitch - optimized for high-density PCB routing in telecom modules
JTAG Support IEEE 1149.1-compliant TAP controller with boundary scan - enables production test and debug without physical probe access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-write masking via BWS[1:0]
Q[17:0] Synchronous read data output 18-bit parallel output aligned to CQ/CQ; tristated automatically when RPS is deasserted
RPS / WPS Port select control Active-LOW signals enabling independent read/write port activation - essential for depth expansion
BWS[1:0] Byte write select Two active-LOW signals controlling 9-bit byte groups (D[8:0] and D[17:9]) - preserves unselected bytes during partial writes
K / K Dual-phase clock inputs Rising edges drive all synchronous registers; K controls read-side timing, K controls write-side timing
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K - used by FPGA/ASIC receivers for source-synchronous data capture
QVLD Data validity indicator Asserted coincident with valid Q[17:0] - eliminates need for fixed delay-based data sampling windows
ZQ Impedance calibration input Connects to external resistor to ground to tune CQ/CQ/Q[17:0] output drive strength to match PCB trace impedance
DOFF PLL disable control When LOW, disables PLL and reverts to QDR I mode (1-cycle latency, ≤167 MHz operation)

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling by 75% vs. single-word access - lowers EMI and simplifies address generation logic
Separate read/write data paths Eliminates data bus turnaround delays and contention - enables true concurrent read/write at full bandwidth
Programmable output impedance (ZQ) Enables dynamic drive strength tuning to match varying PCB trace impedances - improves signal integrity across board variants
QVLD synchronized data-valid flag Removes dependency on fixed setup/hold timing margins - allows reliable data capture even under PVT variation
Integrated PLL with DOFF control Provides deterministic 2.5-cycle latency timing while retaining backward compatibility with QDR I systems via pin-strapping

Applications

Network Packet Buffering Telecom Switch Fabric

Use Scenario: Storing ingress/egress packets in 10G/25G Ethernet line cards before classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with simultaneous write (ingress) and read (egress) operations at 400 MHz.

Use Value: 2.5-cycle latency and echo clocks enable deterministic 800 MT/s throughput per port - meeting sub-100 ns queuing delay requirements.

Use Scenario: Interfacing between scheduler ASICs and crosspoint switches in carrier-grade TDM-over-packet systems.

IC Role / Device Role / Timing Role: High-bandwidth memory bridge providing time-slot alignment and jitter attenuation between asynchronous domains.

Use Value: Separate RPS/WPS and depth expansion support allow scalable 16–64 Mbit buffer banks without external arbitration logic.

Baseband Processing Buffer High-Frequency Trading Engine

Use Scenario: Temporary storage of OFDM symbol data between FFT processing stages in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-jitter, burst-capable SRAM synchronizing data flow between parallel DSP cores and RF front-end controllers.

Use Value: HSTL I/O and 1.4–1.8 V VDDQ range ensure compatibility with FPGA transceivers and low-power SoCs in compact form factors.

Use Scenario: Ultra-low-latency order book caching in FPGA-accelerated trading platforms requiring microsecond-scale memory access.

IC Role / Device Role / Timing Role: Deterministic-latency memory serving as hot cache for market data feeds and execution queues.

Use Value: QVLD + echo clocks eliminate timing uncertainty - enabling consistent <12 ns read-access jitter critical for sub-microsecond decision loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256P-15JCIN Asynchronous 256K × 18 SRAM; no DDR, no echo clocks, no PLL; 15 ns access time Used in legacy control-plane buffers where deterministic latency is less critical than cost Select only if system clock ≤100 MHz and burst depth ≤1; not suitable for QDR II+ protocol migration
IS61WV102418BLL-10BLI Synchronous 1M × 18 SRAM; single-port; 10 ns cycle time; no RPS/WPS or burst capability Deployed in non-concurrent memory subsystems like boot ROM caches or configuration storage Not a functional replacement - lacks dual-port, burst, or echo clock features required for packet buffering

Compared with AS7C36256P-15JCIN and IS61WV102418BLL-10BLI, CY7C15632KV18-400BZXC uniquely delivers concurrent 400 MHz DDR read/write with source-synchronous timing - making it irreplaceable in modern high-throughput, low-jitter data path designs.

Availability

CY7C15632KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom switch fabric, and high-frequency trading engine applications requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C15632KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II+ SRAM portfolio, including reliability testing, documentation updates, and long-term manufacturing commitment.

This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic-latency, high-bandwidth data buffering in networking, wireless infrastructure, and real-time financial systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW, reverting the device to QDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH, the PLL enables precise 2.5-cycle latency at up to 400 MHz. This pin must be pulled up via ≤10 kΩ resistor for normal QDR II+ operation; floating or grounding it alters all AC timing parameters.

How does the ZQ pin calibrate output drive strength?

ZQ connects to an external resistor (RQ) tied to ground; the device measures RQ and configures CQ, CQ, and Q[17:0] output drivers to 0.2 × RQ impedance. This compensates for process/voltage/temperature variations and matches PCB trace impedance - improving signal integrity without requiring board-level termination resistors.

Can CY7C15632KV18-400BZXC operate with VDDQ = 1.5 V?

Yes - the datasheet explicitly states VDDQ supports 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL output drive strength is reduced versus 1.8 V, but timing margins remain compliant at 400 MHz. System-level validation is recommended for marginal setups, especially with long traces or high fanout.

What is the role of RPS and WPS in depth expansion configurations?

RPS and WPS are active-LOW port-select signals that independently enable read or write access to the device. In depth-expanded systems, multiple CY7C15632KV18 devices share the same address/data buses, with RPS/WPS decoded from higher-order address bits to select individual chips - eliminating need for external bus arbiters or glue logic.

CY7C15632KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C15632KV18-400BZXC FAQ

1.How can I place an order for CY7C15632KV18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C15632KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C15632KV18-400BZXC reliable?

The price and inventory of CY7C15632KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-400BZXC is usually 5 days.

3.What payment methods are accepted for CY7C15632KV18-400BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C15632KV18-400BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C15632KV18-400BZXC?

CY7C15632KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C15632KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C15632KV18-400BZXC?

For technical support, including CY7C15632KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C15632KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C15632KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C15632KV18-400BZXC?

All CY7C15632KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C15632KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C15632KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C15632KV18-400BZXC Tags

  • CY7C15632KV18-400BZXC
  • CY7C15632KV18-400BZXC PDF
  • CY7C15632KV18-400BZXC Datasheet
  • CY7C15632KV18-400BZXC Specifications
  • CY7C15632KV18-400BZXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C15632KV18-400BZXC
  • Buy CY7C15632KV18-400BZXC
  • CY7C15632KV18-400BZXC Price
  • CY7C15632KV18-400BZXC Distributor
  • CY7C15632KV18-400BZXC Supplier
  • CY7C15632KV18-400BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER