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Cypress Semiconductor Corp CY7C15632KV18-450BZC

Part No.:
CY7C15632KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C15632KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,099

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Product details

Overview

CY7C15632KV18-450BZC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 450 MHz clock operation, 2.5-cycle read latency, 18-bit × 4M organization, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 1000 MT/s DDR data transfer on both ports and supports concurrent read/write transactions in high-bandwidth networking buffers and packet processors.

For engineers reviewing the CY7C15632KV18-450BZC datasheet, CY7C15632KV18-450BZC pinout, CY7C15632KV18-450BZC application, or CY7C15632KV18-450BZC equivalent, key selection criteria include burst depth (four-word), echo clock support (CQ/CQ), QVLD timing alignment, DOFF-configurable latency mode (QDR I vs. QDR II+), and HSTL-18 I/O compatibility with 1.4–1.8 V VDDQ.

Technical Context

This device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. All inputs (RPS, WPS, BWS[1:0], A[19:0], D[17:0]) are registered on rising edges of K/K clocks, and all outputs (Q[17:0], QVLD, CQ/CQ) are edge-aligned to those clocks.

The integrated PLL enables precise 2.5-cycle read latency when DOFF = HIGH; disabling the PLL via DOFF = LOW reverts operation to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ provide source-synchronous data capture, while ZQ enables programmable output impedance matching to system bus termination.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4 M × 18 configuration)
Max Clock Frequency450 MHz - determines maximum sustained bandwidth of 16.2 GB/s (1000 MT/s × 18-bit)
Read Latency2.5 cycles (DOFF = HIGH) - enables high-speed pipeline staging for back-to-back reads
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL-18 signaling
Burst LengthFour-word - reduces address bus toggling frequency by 4× versus single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in space-constrained routers/switches
Core SupplyVDD = 1.8 V ± 0.1 V - defines stable internal logic voltage domain for low-noise timing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputLatched on rising edges of K/K; enables full 18-bit parallel writes per cycle
Q[17:0]Synchronous read data outputDrives valid data aligned to CQ/CQ; tristated automatically on RPS deassertion
RPS / WPSRead/Write port selectActive-low enables independent control of read/write initiation without bus turnaround
BWS[1:0]Byte write selectIndependent 9-bit byte masking (BWS0 → D[8:0], BWS1 → D[17:9]) for partial writes
K / KDual-phase input clocksRising edges drive all registers; K controls read-side timing, K controls write-side timing
CQ / CQEcho clock outputsFree-running, source-synchronous clocks aligned to Q[17:0] for reliable high-speed capture
QVLDData validity indicatorEdge-aligned with CQ/CQ; signals when Q[17:0] contains valid burst data
DOFFPLL disable controlLOW disables PLL, forcing QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode
ZQImpedance calibration inputConnects to external resistor to ground to tune CQ/CQ/Q[17:0] output drive strength to 0.2 × RQ

Key Features

FeatureDesign Value
Separate read/write data portsEliminates bidirectional bus turnaround overhead, enabling true concurrent read/write at full bandwidth
Four-word burst architectureReduces effective address bus frequency by 75%, easing PCB routing and timing closure in high-speed designs
Programmable 2.5-cycle latencyEnables optimal pipeline depth for multi-stage network processing pipelines without sacrificing throughput
HSTL-18 compatible I/OEnsures signal integrity at 1000 MT/s with controlled slew rate and on-die termination support via ZQ
JTAG 1149.1 test access portSupports boundary scan testing and in-system debug without requiring additional test fixtures

Applications

High-Speed Network Packet BufferTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet switches with real-time classification and forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks.

Use Value: Concurrent read/write eliminates arbitration delay; 450 MHz operation sustains ≥16 GB/s aggregate bandwidth required for full-duplex 25G line rates.

Use Scenario: Buffering time-division multiplexed (TDM) voice channels and control plane messages in carrier-grade optical transport units.

IC Role / Device Role / Timing Role: High-reliability, low-jitter memory for TDM frame assembly/disassembly engines operating under strict jitter budgets.

Use Value: Echo clocks CQ/CQ and QVLD enable deterministic data capture at 450 MHz; HSTL-18 I/O ensures signal fidelity over long backplane traces.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Serving as L2 cache for FPGA-based LTE/5G baseband processors handling channel estimation and FFT/IFFT pipelines.

IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with FPGA fabric via dedicated read/write ports.

Use Value: 2.5-cycle latency aligns precisely with FPGA pipeline stages; four-word burst matches typical FFT word grouping for efficient data streaming.

Use Scenario: Storing high-resolution stimulus/response patterns in automated test equipment (ATE) for SoC validation at multi-GHz speeds.

IC Role / Device Role / Timing Role: Deterministic pattern generator memory synchronized to ultra-stable system clocks with sub-nanosecond timing margins.

Use Value: PLL-controlled timing and QVLD-valid data windows ensure bit-accurate pattern delivery at 1000 MT/s; JTAG support enables in-system memory verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C15632KV18-500BZCHigher max clock (500 MHz), same 72-Mbit density and pinout; higher power draw (850 mA vs. 780 mA)Required where system clock exceeds 450 MHz but layout and firmware must remain unchangedSelect only if timing margin analysis confirms stable 500 MHz operation and thermal design accommodates +70 mA current increase
AS7C3256A-15JCINAsynchronous 256K × 16 SRAM; no DDR, no echo clocks, no QVLD; 15 ns access, 54-ball TSOP-IIAcceptable only in legacy systems with relaxed bandwidth needs (<100 MB/s) and no concurrent transaction requirementNot a functional substitute - use only for cost-sensitive, low-speed replacements where QDR features are unused

Compared with CY7C15632KV18-500BZC, the -450BZC offers lower power and relaxed timing margins at 450 MHz; compared with AS7C3256A-15JCIN, it delivers >160× higher bandwidth and deterministic DDR timing but requires full QDR II+ interface design investment.

Availability

CY7C15632KV18-450BZC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processing caches, and ATE pattern memory requiring stable component supply across multi-year production cycles.

Supply support for CY7C15632KV18-450BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's QDR® II+ SRAM product line, designed specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write and sub-ns timing predictability are mandatory.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF pin controls the internal PLL: when HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency and supports up to 450 MHz; when LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This allows backward compatibility with legacy QDR I controllers but sacrifices bandwidth and latency flexibility.

How are the echo clocks CQ and CQ used in system-level timing closure?

CQ and CQ are free-running, source-synchronous clocks derived from K and K respectively, edge-aligned to Q[17:0] output data. They serve as capture clocks for downstream receivers (e.g., FPGA input registers), eliminating setup/hold uncertainty caused by clock skew and flight time mismatch. Their phase relationship to Q[17:0] is guaranteed per datasheet AC specs, enabling robust timing closure at 1000 MT/s.

Can BWS[1:0] be used to perform partial writes without affecting other bytes in the same 18-bit word?

Yes. BWS0 controls write enable for D[8:0] (lower 9 bits) and BWS1 controls D[17:9] (upper 9 bits). When either is deasserted (HIGH), the corresponding byte group remains unaltered during the write cycle. This enables atomic updates to specific fields within a 18-bit word - for example, updating only status flags in a packet header without overwriting payload length or checksum fields.

What is the purpose of the ZQ pin, and what happens if it is left unconnected?

ZQ calibrates output driver impedance for CQ, CQ, and Q[17:0] to match the system data bus (typically 50 Ω). It must be connected to a precision resistor (e.g., 240 Ω) to ground; connecting directly to VDDQ enables minimum impedance mode. Leaving ZQ unconnected or tied to GND violates the absolute maximum ratings and may cause output overshoot, timing violations, or permanent damage due to undefined bias conditions.

CY7C15632KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C15632KV18-450BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C15632KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C15632KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-450BZC is usually 5 days.

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CY7C15632KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C15632KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C15632KV18-450BZC?

For technical support, including CY7C15632KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-450BZC requirements.

6.How does Aetrix verify that CY7C15632KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C15632KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C15632KV18-450BZC?

All CY7C15632KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C15632KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C15632KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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