Cypress Semiconductor Corp CY7C15632KV18-450BZC
- Part No.:
- CY7C15632KV18-450BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C15632KV18-450BZC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C15632KV18-450BZC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 450 MHz clock operation, 2.5-cycle read latency, 18-bit × 4M organization, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 1000 MT/s DDR data transfer on both ports and supports concurrent read/write transactions in high-bandwidth networking buffers and packet processors.
For engineers reviewing the CY7C15632KV18-450BZC datasheet, CY7C15632KV18-450BZC pinout, CY7C15632KV18-450BZC application, or CY7C15632KV18-450BZC equivalent, key selection criteria include burst depth (four-word), echo clock support (CQ/CQ), QVLD timing alignment, DOFF-configurable latency mode (QDR I vs. QDR II+), and HSTL-18 I/O compatibility with 1.4–1.8 V VDDQ.
Technical Context
This device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. All inputs (RPS, WPS, BWS[1:0], A[19:0], D[17:0]) are registered on rising edges of K/K clocks, and all outputs (Q[17:0], QVLD, CQ/CQ) are edge-aligned to those clocks.
The integrated PLL enables precise 2.5-cycle read latency when DOFF = HIGH; disabling the PLL via DOFF = LOW reverts operation to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ provide source-synchronous data capture, while ZQ enables programmable output impedance matching to system bus termination.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4 M × 18 configuration) |
| Max Clock Frequency | 450 MHz - determines maximum sustained bandwidth of 16.2 GB/s (1000 MT/s × 18-bit) |
| Read Latency | 2.5 cycles (DOFF = HIGH) - enables high-speed pipeline staging for back-to-back reads |
| I/O Voltage Range | VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL-18 signaling |
| Burst Length | Four-word - reduces address bus toggling frequency by 4× versus single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in space-constrained routers/switches |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines stable internal logic voltage domain for low-noise timing |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | Latched on rising edges of K/K; enables full 18-bit parallel writes per cycle |
| Q[17:0] | Synchronous read data output | Drives valid data aligned to CQ/CQ; tristated automatically on RPS deassertion |
| RPS / WPS | Read/Write port select | Active-low enables independent control of read/write initiation without bus turnaround |
| BWS[1:0] | Byte write select | Independent 9-bit byte masking (BWS0 → D[8:0], BWS1 → D[17:9]) for partial writes |
| K / K | Dual-phase input clocks | Rising edges drive all registers; K controls read-side timing, K controls write-side timing |
| CQ / CQ | Echo clock outputs | Free-running, source-synchronous clocks aligned to Q[17:0] for reliable high-speed capture |
| QVLD | Data validity indicator | Edge-aligned with CQ/CQ; signals when Q[17:0] contains valid burst data |
| DOFF | PLL disable control | LOW disables PLL, forcing QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune CQ/CQ/Q[17:0] output drive strength to 0.2 × RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bidirectional bus turnaround overhead, enabling true concurrent read/write at full bandwidth |
| Four-word burst architecture | Reduces effective address bus frequency by 75%, easing PCB routing and timing closure in high-speed designs |
| Programmable 2.5-cycle latency | Enables optimal pipeline depth for multi-stage network processing pipelines without sacrificing throughput |
| HSTL-18 compatible I/O | Ensures signal integrity at 1000 MT/s with controlled slew rate and on-die termination support via ZQ |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system debug without requiring additional test fixtures |
Applications
| High-Speed Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in 10G/25G Ethernet switches with real-time classification and forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency shared buffer between ingress parser and egress scheduler, synchronized to line-rate clocks. Use Value: Concurrent read/write eliminates arbitration delay; 450 MHz operation sustains ≥16 GB/s aggregate bandwidth required for full-duplex 25G line rates. | Use Scenario: Buffering time-division multiplexed (TDM) voice channels and control plane messages in carrier-grade optical transport units. IC Role / Device Role / Timing Role: High-reliability, low-jitter memory for TDM frame assembly/disassembly engines operating under strict jitter budgets. Use Value: Echo clocks CQ/CQ and QVLD enable deterministic data capture at 450 MHz; HSTL-18 I/O ensures signal fidelity over long backplane traces. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
Use Scenario: Serving as L2 cache for FPGA-based LTE/5G baseband processors handling channel estimation and FFT/IFFT pipelines. IC Role / Device Role / Timing Role: Low-latency, high-throughput memory interfacing directly with FPGA fabric via dedicated read/write ports. Use Value: 2.5-cycle latency aligns precisely with FPGA pipeline stages; four-word burst matches typical FFT word grouping for efficient data streaming. | Use Scenario: Storing high-resolution stimulus/response patterns in automated test equipment (ATE) for SoC validation at multi-GHz speeds. IC Role / Device Role / Timing Role: Deterministic pattern generator memory synchronized to ultra-stable system clocks with sub-nanosecond timing margins. Use Value: PLL-controlled timing and QVLD-valid data windows ensure bit-accurate pattern delivery at 1000 MT/s; JTAG support enables in-system memory verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C15632KV18-500BZC | Higher max clock (500 MHz), same 72-Mbit density and pinout; higher power draw (850 mA vs. 780 mA) | Required where system clock exceeds 450 MHz but layout and firmware must remain unchanged | Select only if timing margin analysis confirms stable 500 MHz operation and thermal design accommodates +70 mA current increase |
| AS7C3256A-15JCIN | Asynchronous 256K × 16 SRAM; no DDR, no echo clocks, no QVLD; 15 ns access, 54-ball TSOP-II | Acceptable only in legacy systems with relaxed bandwidth needs (<100 MB/s) and no concurrent transaction requirement | Not a functional substitute - use only for cost-sensitive, low-speed replacements where QDR features are unused |
Compared with CY7C15632KV18-500BZC, the -450BZC offers lower power and relaxed timing margins at 450 MHz; compared with AS7C3256A-15JCIN, it delivers >160× higher bandwidth and deterministic DDR timing but requires full QDR II+ interface design investment.
Availability
CY7C15632KV18-450BZC is available at Aetrix Electronics and suitable for high-speed network packet buffers, telecom line card memory, baseband processing caches, and ATE pattern memory requiring stable component supply across multi-year production cycles.
Supply support for CY7C15632KV18-450BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
This device belongs to Infineon's QDR® II+ SRAM product line, designed specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where concurrent read/write and sub-ns timing predictability are mandatory.
FAQ
What is the function of the DOFF pin, and how does it affect timing behavior?
The DOFF pin controls the internal PLL: when HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency and supports up to 450 MHz; when LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This allows backward compatibility with legacy QDR I controllers but sacrifices bandwidth and latency flexibility.
How are the echo clocks CQ and CQ used in system-level timing closure?
CQ and CQ are free-running, source-synchronous clocks derived from K and K respectively, edge-aligned to Q[17:0] output data. They serve as capture clocks for downstream receivers (e.g., FPGA input registers), eliminating setup/hold uncertainty caused by clock skew and flight time mismatch. Their phase relationship to Q[17:0] is guaranteed per datasheet AC specs, enabling robust timing closure at 1000 MT/s.
Can BWS[1:0] be used to perform partial writes without affecting other bytes in the same 18-bit word?
Yes. BWS0 controls write enable for D[8:0] (lower 9 bits) and BWS1 controls D[17:9] (upper 9 bits). When either is deasserted (HIGH), the corresponding byte group remains unaltered during the write cycle. This enables atomic updates to specific fields within a 18-bit word - for example, updating only status flags in a packet header without overwriting payload length or checksum fields.
What is the purpose of the ZQ pin, and what happens if it is left unconnected?
ZQ calibrates output driver impedance for CQ, CQ, and Q[17:0] to match the system data bus (typically 50 Ω). It must be connected to a precision resistor (e.g., 240 Ω) to ground; connecting directly to VDDQ enables minimum impedance mode. Leaving ZQ unconnected or tied to GND violates the absolute maximum ratings and may cause output overshoot, timing violations, or permanent damage due to undefined bias conditions.
CY7C15632KV18-450BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C15632KV18-450BZC FAQ
1.How can I place an order for CY7C15632KV18-450BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C15632KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C15632KV18-450BZC reliable?
The price and inventory of CY7C15632KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-450BZC is usually 5 days.
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Once your CY7C15632KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C15632KV18-450BZC?
For technical support, including CY7C15632KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-450BZC requirements.
6.How does Aetrix verify that CY7C15632KV18-450BZC is sourced from the original manufacturer or authorized distributors?
All CY7C15632KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-450BZC meets industry standards.
7.What is the process for return or replacement of CY7C15632KV18-450BZC?
All CY7C15632KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-450BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C15632KV18-450BZC part is unused and in its original packaging.
Return procedure for CY7C15632KV18-450BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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