Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C15632KV18-450BZXC

Part No.:
CY7C15632KV18-450BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C15632KV18-450BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,164

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C15632KV18-450BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and dual DDR interfaces operating at 450 MHz (900 MT/s). It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C15632KV18-450BZXC datasheet, CY7C15632KV18-450BZXC pinout, CY7C15632KV18-450BZXC application, or CY7C15632KV18-450BZXC equivalent, key selection factors include its 4 M × 18 configuration, 1.8 V core / 1.4–1.8 V I/O supply support, HSTL-compatible interfaces, PLL-based timing alignment, and JTAG 1149.1 test access capability.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Each port uses DDR signaling on K/K clocks, enabling 1000 MT/s effective data rate at 450 MHz input clock frequency.

Its QDR II+ operation relies on a phase-locked loop (PLL) for precise data placement; when DOFF is HIGH, it delivers 2.5-cycle read latency with full four-word burst; when DOFF is LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ are free-running and edge-aligned to K/K for simplified high-speed capture.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4 M × 18 organization)
Max Clock Frequency450 MHz - supports 900 MT/s DDR transfers on both ports
Read Latency2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-constrained systems
Core Supply Voltage1.8 V ± 0.1 V - defines stable internal SRAM array operation
I/O Supply Range1.4 V to 1.8 V - allows interoperability with 1.5 V or 1.8 V HSTL-15/18 systems
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and signal integrity for high-speed routing
Standby CurrentTypical 45 mA at 450 MHz - reflects low-power idle state under active clocking

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data inputsLatched on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1
Q[17:0]Synchronous read data outputsDDR-driven on K/K rising edges; tristated automatically when RPS is deasserted
RPS / WPSRead/Write port selectActive-low controls port activation; enables concurrent read/write without bus turnaround
CQ / CQRead echo clocksFree-running, edge-aligned copies of K/K; simplify timing closure for output capture
QVLDData validity indicatorAsserted synchronously with CQ/CQ to signal valid Q[17:0] data during burst reads
DOFFPLL disable controlLOW forces QDR I mode (1-cycle latency); HIGH enables full QDR II+ timing
ZQOutput impedance calibrationConnects to external resistor to ground to tune CQ/CQ/Q[17:0] drive strength to system bus Z₀

Key Features

FeatureDesign Value
Separate read/write portsEliminates data bus turnaround overhead and avoids contention in full-duplex memory access
Four-word burst architectureReduces address bus toggling by 75% per transaction-lowers EMI and simplifies controller logic
HSTL I/O with variable driveEnsures signal integrity at 450 MHz; ZQ calibration matches output impedance to PCB trace impedance
JTAG 1149.1 test access portEnables boundary-scan testing of interconnects without requiring functional memory access
Programmable DOFF modeAllows field-selectable operation between QDR II+ (2.5-cycle, high-throughput) and QDR I (1-cycle, legacy-timing) modes

Applications

Network Packet BufferingHigh-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between MAC and switch fabric controllers.

Use Value: Concurrent read/write eliminates arbitration delay; 450 MHz DDR interface sustains ≥900 MB/s sustained bandwidth required for 10G+ line rates.

Use Scenario: Capturing real-time waveform samples in automated test equipment with sub-nanosecond timing resolution.

IC Role / Device Role / Timing Role: High-speed acquisition memory synchronized to precision clock generators and echo-clock-captured ADC outputs.

Use Value: CQ/CQ echo clocks align sampled data edges to controller sampling windows; QVLD removes setup/hold uncertainty in burst capture.

Telecom Baseband ProcessingAI Accelerator On-Chip Cache

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly with DSP cores using dedicated read/write data paths.

Use Value: 2.5-cycle latency ensures predictable pipeline depth; 1.4 V I/O compatibility reduces power vs. 1.8 V-only alternatives in dense RF modules.

Use Scenario: Serving as L2 cache buffer between tensor processing units and memory controllers in edge AI inference accelerators.

IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic bandwidth to parallel compute clusters during weight/data fetch phases.

Use Value: Four-word burst reduces address decode latency per 72-bit operand; separate ports prevent read stalls during weight updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C15632KV18-500BZXC500 MHz max clock (vs. 450 MHz); higher current draw (850 mA vs. 780 mA)Requires tighter timing margins and enhanced thermal managementSelect only if system demands >900 MB/s sustained bandwidth and board layout supports higher power density
AS7C36256P-15JCINAsynchronous 256K × 16 SRAM; no DDR, no echo clocks, no QVLD, single-portLower cost but lacks concurrency, burst efficiency, and high-speed timing aidsUse only in legacy designs where bandwidth < 100 MB/s and timing simplicity outweigh throughput needs

Compared with CY7C15632KV18-500BZXC, the -450BZXC offers better power efficiency and relaxed timing closure at 450 MHz, while AS7C36256P-15JCIN sacrifices all QDR II+ advantages for cost and simplicity in non-pipelined applications.

Availability

CY7C15632KV18-450BZXC is available at Aetrix Electronics and suitable for network switching infrastructure, high-speed test instrumentation, and telecom baseband subsystems requiring stable component supply across extended production lifecycles.

Supply support for CY7C15632KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and communications markets.

This device belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput memory buffering in packet-switched and real-time signal processing systems where dual-port concurrency and sub-3-cycle latency are critical.

FAQ

What is the function of the DOFF pin on CY7C15632KV18-450BZXC?

The DOFF (PLL Turn Off) pin controls the internal phase-locked loop. When pulled HIGH, the device operates in full QDR II+ mode with 2.5-cycle read latency and 450 MHz capability. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and reduced maximum frequency (≤167 MHz). This enables backward compatibility and flexible timing configuration without hardware redesign.

How does the ZQ pin affect signal integrity?

The ZQ pin enables output impedance calibration for Q[17:0], CQ, and CQ signals. When connected to a precision resistor (typically 240 Ω) to ground, the device tunes its driver strength to match the system's data bus characteristic impedance (Z₀), minimizing reflections and improving eye diagram margin. Leaving ZQ unconnected or tied to GND violates specification and risks signal integrity failure at 450 MHz.

Can CY7C15632KV18-450BZXC be used without the echo clocks CQ and CQ?

Yes - CQ and CQ are optional timing aids, not mandatory for basic operation. The device drives Q[17:0] synchronously to K/K edges regardless. However, omitting CQ/CQ increases timing margin requirements on the receiving controller side, especially above 300 MHz, because the controller must sample Q[17:0] relative to K/K rather than a dedicated echo reference. For robust 450 MHz operation, Infineon strongly recommends using CQ/CQ for capture alignment.

What is the role of the QVLD signal during burst reads?

QVLD is an edge-aligned, synchronous output that asserts for exactly one K/K cycle per valid 18-bit word in the four-word burst. It indicates which Q[17:0] words contain meaningful data, eliminating ambiguity during partial bursts or port deselection. Unlike simple clock-enable schemes, QVLD accounts for internal pipeline delays and guarantees validity timing even under dynamic RPS assertion/deassertion, making it essential for reliable high-speed data capture.

CY7C15632KV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C15632KV18-450BZXC FAQ

1.How can I place an order for CY7C15632KV18-450BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C15632KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C15632KV18-450BZXC reliable?

The price and inventory of CY7C15632KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-450BZXC is usually 5 days.

3.What payment methods are accepted for CY7C15632KV18-450BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C15632KV18-450BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C15632KV18-450BZXC?

CY7C15632KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C15632KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C15632KV18-450BZXC?

For technical support, including CY7C15632KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-450BZXC requirements.

6.How does Aetrix verify that CY7C15632KV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C15632KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C15632KV18-450BZXC?

All CY7C15632KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C15632KV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C15632KV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C15632KV18-450BZXC Tags

  • CY7C15632KV18-450BZXC
  • CY7C15632KV18-450BZXC PDF
  • CY7C15632KV18-450BZXC Datasheet
  • CY7C15632KV18-450BZXC Specifications
  • CY7C15632KV18-450BZXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C15632KV18-450BZXC
  • Buy CY7C15632KV18-450BZXC
  • CY7C15632KV18-450BZXC Price
  • CY7C15632KV18-450BZXC Distributor
  • CY7C15632KV18-450BZXC Supplier
  • CY7C15632KV18-450BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER