Cypress Semiconductor Corp CY7C15632KV18-450BZXC
- Part No.:
- CY7C15632KV18-450BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C15632KV18-450BZXC.pdf
- Description:
- IC SRAM 72MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C15632KV18-450BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and dual DDR interfaces operating at 450 MHz (900 MT/s). It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C15632KV18-450BZXC datasheet, CY7C15632KV18-450BZXC pinout, CY7C15632KV18-450BZXC application, or CY7C15632KV18-450BZXC equivalent, key selection factors include its 4 M × 18 configuration, 1.8 V core / 1.4–1.8 V I/O supply support, HSTL-compatible interfaces, PLL-based timing alignment, and JTAG 1149.1 test access capability.
Technical Context
The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. Each port uses DDR signaling on K/K clocks, enabling 1000 MT/s effective data rate at 450 MHz input clock frequency.
Its QDR II+ operation relies on a phase-locked loop (PLL) for precise data placement; when DOFF is HIGH, it delivers 2.5-cycle read latency with full four-word burst; when DOFF is LOW, it reverts to QDR I mode (1-cycle latency, ≤167 MHz). Echo clocks CQ/CQ are free-running and edge-aligned to K/K for simplified high-speed capture.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4 M × 18 organization) |
| Max Clock Frequency | 450 MHz - supports 900 MT/s DDR transfers on both ports |
| Read Latency | 2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-constrained systems |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines stable internal SRAM array operation |
| I/O Supply Range | 1.4 V to 1.8 V - allows interoperability with 1.5 V or 1.8 V HSTL-15/18 systems |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and signal integrity for high-speed routing |
| Standby Current | Typical 45 mA at 450 MHz - reflects low-power idle state under active clocking |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1 |
| Q[17:0] | Synchronous read data outputs | DDR-driven on K/K rising edges; tristated automatically when RPS is deasserted |
| RPS / WPS | Read/Write port select | Active-low controls port activation; enables concurrent read/write without bus turnaround |
| CQ / CQ | Read echo clocks | Free-running, edge-aligned copies of K/K; simplify timing closure for output capture |
| QVLD | Data validity indicator | Asserted synchronously with CQ/CQ to signal valid Q[17:0] data during burst reads |
| DOFF | PLL disable control | LOW forces QDR I mode (1-cycle latency); HIGH enables full QDR II+ timing |
| ZQ | Output impedance calibration | Connects to external resistor to ground to tune CQ/CQ/Q[17:0] drive strength to system bus Z₀ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround overhead and avoids contention in full-duplex memory access |
| Four-word burst architecture | Reduces address bus toggling by 75% per transaction-lowers EMI and simplifies controller logic |
| HSTL I/O with variable drive | Ensures signal integrity at 450 MHz; ZQ calibration matches output impedance to PCB trace impedance |
| JTAG 1149.1 test access port | Enables boundary-scan testing of interconnects without requiring functional memory access |
| Programmable DOFF mode | Allows field-selectable operation between QDR II+ (2.5-cycle, high-throughput) and QDR I (1-cycle, legacy-timing) modes |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking buffer between MAC and switch fabric controllers. Use Value: Concurrent read/write eliminates arbitration delay; 450 MHz DDR interface sustains ≥900 MB/s sustained bandwidth required for 10G+ line rates. | Use Scenario: Capturing real-time waveform samples in automated test equipment with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: High-speed acquisition memory synchronized to precision clock generators and echo-clock-captured ADC outputs. Use Value: CQ/CQ echo clocks align sampled data edges to controller sampling windows; QVLD removes setup/hold uncertainty in burst capture. |
| Telecom Baseband Processing | AI Accelerator On-Chip Cache |
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfacing directly with DSP cores using dedicated read/write data paths. Use Value: 2.5-cycle latency ensures predictable pipeline depth; 1.4 V I/O compatibility reduces power vs. 1.8 V-only alternatives in dense RF modules. | Use Scenario: Serving as L2 cache buffer between tensor processing units and memory controllers in edge AI inference accelerators. IC Role / Device Role / Timing Role: Burst-access SRAM providing deterministic bandwidth to parallel compute clusters during weight/data fetch phases. Use Value: Four-word burst reduces address decode latency per 72-bit operand; separate ports prevent read stalls during weight updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C15632KV18-500BZXC | 500 MHz max clock (vs. 450 MHz); higher current draw (850 mA vs. 780 mA) | Requires tighter timing margins and enhanced thermal management | Select only if system demands >900 MB/s sustained bandwidth and board layout supports higher power density |
| AS7C36256P-15JCIN | Asynchronous 256K × 16 SRAM; no DDR, no echo clocks, no QVLD, single-port | Lower cost but lacks concurrency, burst efficiency, and high-speed timing aids | Use only in legacy designs where bandwidth < 100 MB/s and timing simplicity outweigh throughput needs |
Compared with CY7C15632KV18-500BZXC, the -450BZXC offers better power efficiency and relaxed timing closure at 450 MHz, while AS7C36256P-15JCIN sacrifices all QDR II+ advantages for cost and simplicity in non-pipelined applications.
Availability
CY7C15632KV18-450BZXC is available at Aetrix Electronics and suitable for network switching infrastructure, high-speed test instrumentation, and telecom baseband subsystems requiring stable component supply across extended production lifecycles.
Supply support for CY7C15632KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and communications markets.
This device belongs to Infineon's QDR® II+ SRAM product line, engineered specifically for deterministic, high-throughput memory buffering in packet-switched and real-time signal processing systems where dual-port concurrency and sub-3-cycle latency are critical.
FAQ
What is the function of the DOFF pin on CY7C15632KV18-450BZXC?
The DOFF (PLL Turn Off) pin controls the internal phase-locked loop. When pulled HIGH, the device operates in full QDR II+ mode with 2.5-cycle read latency and 450 MHz capability. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and reduced maximum frequency (≤167 MHz). This enables backward compatibility and flexible timing configuration without hardware redesign.
How does the ZQ pin affect signal integrity?
The ZQ pin enables output impedance calibration for Q[17:0], CQ, and CQ signals. When connected to a precision resistor (typically 240 Ω) to ground, the device tunes its driver strength to match the system's data bus characteristic impedance (Z₀), minimizing reflections and improving eye diagram margin. Leaving ZQ unconnected or tied to GND violates specification and risks signal integrity failure at 450 MHz.
Can CY7C15632KV18-450BZXC be used without the echo clocks CQ and CQ?
Yes - CQ and CQ are optional timing aids, not mandatory for basic operation. The device drives Q[17:0] synchronously to K/K edges regardless. However, omitting CQ/CQ increases timing margin requirements on the receiving controller side, especially above 300 MHz, because the controller must sample Q[17:0] relative to K/K rather than a dedicated echo reference. For robust 450 MHz operation, Infineon strongly recommends using CQ/CQ for capture alignment.
What is the role of the QVLD signal during burst reads?
QVLD is an edge-aligned, synchronous output that asserts for exactly one K/K cycle per valid 18-bit word in the four-word burst. It indicates which Q[17:0] words contain meaningful data, eliminating ambiguity during partial bursts or port deselection. Unlike simple clock-enable schemes, QVLD accounts for internal pipeline delays and guarantees validity timing even under dynamic RPS assertion/deassertion, making it essential for reliable high-speed data capture.
CY7C15632KV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C15632KV18-450BZXC FAQ
1.How can I place an order for CY7C15632KV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C15632KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C15632KV18-450BZXC reliable?
The price and inventory of CY7C15632KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-450BZXC is usually 5 days.
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Once your CY7C15632KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C15632KV18-450BZXC?
For technical support, including CY7C15632KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-450BZXC requirements.
6.How does Aetrix verify that CY7C15632KV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C15632KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C15632KV18-450BZXC?
All CY7C15632KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C15632KV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C15632KV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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