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Cypress Semiconductor Corp CY7C15632KV18-500BZXI

Part No.:
CY7C15632KV18-500BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C15632KV18-500BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,525

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Product details

Overview

CY7C15632KV18-500BZXI from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ SRAM with separate read/write ports, 500 MHz clock operation, 2.5-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package. It delivers 1000 MT/s DDR data transfer on both ports, supports full data coherency, and operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C15632KV18-500BZXI datasheet, CY7C15632KV18-500BZXI pinout, CY7C15632KV18-500BZXI application, or CY7C15632KV18-500BZXI equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, DOFF-configurable latency mode (QDR I vs. QDR II+), and HSTL-compatible 18-bit bidirectional data interface.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 20-bit address bus. All inputs (A, D, RPS, WPS, BWS, DOFF, ZQ) are registered on rising edges of K/K clocks, and all outputs (Q, QVLD, CQ, CQ) are edge-aligned to those clocks. The internal PLL enables precise 2.5-cycle read latency when DOFF = HIGH.

It uses four-word burst transfers per access, delivering 72 bits per cycle across two clock edges (DDR), achieving 18 Gb/s aggregate bandwidth. Depth expansion is supported via RPS/WPS port selects, and byte-write control (BWS0/BWS1) allows selective 9-bit writes without disturbing adjacent bytes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4 M × 18 configuration)
Max Clock Frequency 500 MHz - enables 1000 MT/s DDR data rate on both ports
Read Latency 2.5 cycles (DOFF = HIGH); 1 cycle (DOFF = LOW, QDR I mode)
Core Supply Voltage VDD = 1.8 V ± 0.1 V - defines stable internal timing margin and power envelope
I/O Supply Range VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V system buses
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and signal integrity for high-speed routing
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures clean signal integrity at 500 MHz

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit parallel data driven on rising edges of K/K; tristated automatically when RPS is deasserted
RPS / WPS Port select controls Active-low signals enabling independent read/write port activation; enable depth expansion and concurrent access
K / K Dual-phase input clocks Rising edges drive all synchronous registers; K used for address/control latching, K for data capture - eliminates bus turnaround
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K; simplify high-speed data capture by providing deterministic strobe timing
QVLD Data validity indicator Edge-aligned with CQ/CQ; asserts only during valid read data windows - eliminates need for fixed delay assumptions
DOFF PLL disable control Active-low pin that switches device between QDR II+ (2.5-cycle latency) and QDR I (1-cycle latency) modes
ZQ Output impedance calibration Connects to external resistor to ground to tune CQ/CQ/Q[17:0] output drive strength to match PCB trace impedance

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead and prevents data contention in full-duplex memory systems
Four-word burst architecture Reduces effective address bus frequency by 4× while maintaining peak bandwidth - lowers routing complexity
Programmable latency mode (DOFF) Enables hardware-selectable operation between QDR II+ (500 MHz, 2.5-cycle) and QDR I (167 MHz, 1-cycle) timing
Integrated PLL with echo clocks (CQ/CQ) Provides deterministic, low-jitter strobes aligned to data edges - removes setup/hold uncertainty in FPGA interfaces
HSTL I/O with programmable drive Ensures signal integrity at 500 MHz with controlled slew and impedance matching via ZQ calibration

Applications

Telecom Packet Buffering Network Processor Interface

Use Scenario: Line card buffers for 100G Ethernet switch fabric where packets arrive and depart concurrently at wire speed.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to network processor's QDR II+ memory controller.

Use Value: 1000 MT/s DDR bandwidth and concurrent read/write eliminate arbitration stalls, enabling deterministic 2.5-cycle latency for ingress/egress packet staging.

Use Scenario: External cache for multi-core network processors performing deep packet inspection and header modification.

IC Role / Device Role / Timing Role: Synchronous burst memory serving as L2/L3 scratchpad with independent read/write ports mapped to processor's dual-port AXI interface.

Use Value: Four-word burst reduces address bus toggling by 75%, lowering EMI and simplifying PCB layout for dense 165-ball FBGA placement near processor BGA.

Baseband Processing (4G/5G) High-Speed Test Equipment

Use Scenario: Real-time channel estimation and precoding buffer in massive MIMO baseband units requiring simultaneous FFT input/output storage.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer between DSP engines and RF front-end controllers.

Use Value: Full data coherency and QVLD signaling guarantee sample-accurate alignment between transmit/receive processing chains at 500 MHz clock rates.

Use Scenario: Pattern memory in automated test equipment generating and capturing high-speed digital waveforms up to 1 GHz.

IC Role / Device Role / Timing Role: Deterministic latency memory for waveform generation engine synchronized to instrument's master clock domain.

Use Value: Echo clocks (CQ/CQ) provide sub-nanosecond-aligned strobes for DAC/ADC sampling, eliminating external delay calibration circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256P-15TIN 256-Mbit × 16 async SRAM, no DDR, no echo clocks, 15 ns access, 3.3 V only Lacks concurrent read/write, burst, or PLL - suitable only for legacy control-plane buffering Select only if system requires simple asynchronous interface and tolerates 10× lower bandwidth and higher latency
IS61WV102418BLL-10BLI 18-Mbit × 18 sync SRAM, single port, 10 ns cycle time, 1.8 V core, no QVLD or echo clocks No burst, no separate ports - requires external arbitration for full-duplex use Choose only for cost-sensitive, lower-bandwidth applications where 72-Mbit density and QDR II+ features are unnecessary

Compared with AS7C36256P-15TIN and IS61WV102418BLL-10BLI, CY7C15632KV18-500BZXI uniquely delivers 1000 MT/s DDR throughput, deterministic 2.5-cycle latency with QVLD validation, and echo-clock–assisted timing closure - essential for 500 MHz system designs where bus turnaround and jitter margin are critical.

Availability

CY7C15632KV18-500BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and 5G baseband units requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C15632KV18-500BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR SRAM portfolio, including legacy Cypress-developed devices like the CY7C15632KV18 series.

This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory interfacing in networking, wireless infrastructure, and test instrumentation.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-low PLL disable control. When pulled HIGH (via 10 kΩ pull-up), the internal PLL enables QDR II+ mode with 2.5-cycle read latency and 500 MHz operation. When pulled LOW, the device reverts to QDR I timing with 1-cycle latency and maximum 167 MHz frequency. This hardware-selectable mode allows backward compatibility without changing board layout or firmware.

How do CQ and CQ echo clocks improve system timing closure?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They provide deterministic, low-jitter strobes that align precisely with valid Q[17:0] data edges. This eliminates the need for complex PCB trace length matching or external delay elements when interfacing with FPGAs or ASICs, reducing timing margin uncertainty by up to 150 ps in 500 MHz designs.

Can CY7C15632KV18-500BZXI operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. HSTL Class I input thresholds and variable-drive output buffers are fully characterized at 1.5 V, ensuring reliable signal integrity and compatibility with common 1.5 V FPGA I/O banks without level-shifting circuitry.

What is the role of the ZQ pin, and how must it be connected?

ZQ is an output impedance calibration input. It must be connected to a precision resistor (typically 100 Ω) tied to ground to calibrate CQ, CQ, and Q[17:0] driver strength to match the system's data bus impedance. Connecting ZQ directly to VDDQ enables minimum drive strength mode; leaving it unconnected or tying to GND violates specifications and risks signal integrity failure.

CY7C15632KV18-500BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C15632KV18-500BZXI FAQ

1.How can I place an order for CY7C15632KV18-500BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C15632KV18-500BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C15632KV18-500BZXI reliable?

The price and inventory of CY7C15632KV18-500BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C15632KV18-500BZXI is usually 5 days.

3.What payment methods are accepted for CY7C15632KV18-500BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C15632KV18-500BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C15632KV18-500BZXI?

CY7C15632KV18-500BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C15632KV18-500BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C15632KV18-500BZXI?

For technical support, including CY7C15632KV18-500BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C15632KV18-500BZXI requirements.

6.How does Aetrix verify that CY7C15632KV18-500BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C15632KV18-500BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C15632KV18-500BZXI meets industry standards.

7.What is the process for return or replacement of CY7C15632KV18-500BZXI?

All CY7C15632KV18-500BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C15632KV18-500BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C15632KV18-500BZXI part is unused and in its original packaging.

Return procedure for CY7C15632KV18-500BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C15632KV18-500BZXI Tags

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