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Cypress Semiconductor Corp CY7C1563XV18-600BZXC

Part No.:
CY7C1563XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1563XV18-600BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:245

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Product details

Overview

CY7C1563XV18-600BZXC from Infineon Technologies (formerly Cypress) is a 72-Mbit QDR® II+ Xtreme SRAM with 4M × 18 organization, 2.5-cycle read latency, 600 MHz clock frequency, and DDR interfaces on independent read/write ports. It delivers 1200 MT/s data throughput using HSTL I/O, 1.8 V core supply, and 1.5 V I/O supply, deployed in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1563XV18-600BZXC datasheet, CY7C1563XV18-600BZXC pinout, CY7C1563XV18-600BZXC application, or CY7C1563XV18-600BZXC equivalent, key selection criteria include burst depth (four-word), echo clock timing (CQ/CQ), QVLD validity signaling, DOFF-configurable PLL mode, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround overhead. Its dual-clock DDR interface uses K and K inputs-both rising-edge-triggered-to latch address/data and drive outputs, enabling concurrent read and write operations without arbitration delay.

The integrated PLL supports precise data placement at 600 MHz, while DOFF pin control allows dynamic switching between QDR II+ (2.5-cycle latency) and legacy QDR I (1-cycle latency) timing modes. Echo clocks CQ and CQ are phase-aligned to K/K and simplify high-speed data capture in SerDes-adjacent systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (4M × 18 configuration)
Max Clock Frequency 600 MHz - determines maximum sustained bandwidth of 1200 MT/s per port
Read Latency 2.5 cycles (with DOFF HIGH) - defines minimum time from address assertion to first valid Q[x] output
Core Supply Voltage 1.8 V ± 0.1 V - powers internal logic and array; requires tight regulation for timing stability
I/O Supply Voltage 1.5 V (nominal, 1.4–1.6 V range) - sets HSTL Class I output drive strength and termination reference
Package 165-ball FBGA (13 × 15 × 1.4 mm) - supports fine-pitch routing and thermal dissipation up to 1.1 A max current
Data Interface DDR on both ports - enables double-data-rate transfers on each K/K rising edge, doubling effective bus utilization

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free.

Pin/Terminal Circuit Role Design Meaning
K / K Input clocks (positive/negative) Rising edges sample all synchronous inputs (A, D[x], RPS, WPS, BWS); drive Q[x] and echo clocks
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K used for source-synchronous data capture at receiver
Q[17:0] Read data outputs DDR outputs delivering four sequential 18-bit words per access; tristated when RPS is deasserted
D[17:0] Write data inputs DDR inputs accepting four sequential 18-bit words; sampled on K/K rising edges during active WPS
RPS / WPS Port select controls Active-low enables read/write transactions independently; supports concurrent operation without conflict
BWS[1:0] Byte write selects Two independent 9-bit byte masks (BWS0 = D[8:0], BWS1 = D[17:9]) enable partial-word writes without read-modify-write
QVLD Valid data indicator Edge-aligned with CQ/CQ; signals when Q[17:0] outputs contain valid burst data, critical for FIFO synchronization
DOFF PLL disable control Active-low disables internal PLL; reverts device to QDR I mode (≤167 MHz, 1-cycle latency) for backward compatibility
ZQ Impedance calibration input Connects to external resistor to ground to tune CQ/CQ/Q[x] output driver impedance to match 50 Ω trace impedance

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent access - no bus contention or turnaround cycles required between successive reads/writes
Four-word burst architecture Reduces address bus toggling by 75% vs single-word access; lowers system-level EMI and routing complexity
QVLD + echo clocks (CQ/CQ) Provides deterministic, source-synchronous timing margin for >1 GHz data capture without complex deskew circuitry
Programmable DOFF mode Allows field-selectable operation between high-performance QDR II+ (600 MHz) and legacy-compatible QDR I (167 MHz)
HSTL Class I I/O Ensures signal integrity at 1200 MT/s with controlled slew rate, on-die termination support via ZQ calibration

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly with MAC and traffic manager blocks.

Use Value: 2.5-cycle read latency and concurrent R/W ports reduce queuing delay by up to 40% versus single-port SRAMs in cut-through forwarding.

Use Scenario: Serving as frame buffer in 10G/25G optical transport line cards requiring deterministic jitter-free access.

IC Role / Device Role / Timing Role: Synchronous burst memory providing aligned 72-bit wide data to SerDes PHYs via echo-clock–driven capture.

Use Value: CQ/CQ alignment and QVLD eliminate setup/hold uncertainty, enabling reliable 1200 MT/s operation across temperature and voltage corners.

High-Speed Test Equipment Memory Real-Time Video Processing Buffer

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with nanosecond timestamp resolution.

IC Role / Device Role / Timing Role: Dual-port memory acting as acquisition buffer where write port ingests ADC streams and read port feeds analysis engines.

Use Value: Independent RPS/WPS controls allow uninterrupted streaming writes while background reads extract trigger events without stalling acquisition.

Use Scenario: Frame buffering between video encoder and display controller in broadcast-grade 4K60 video processors.

IC Role / Device Role / Timing Role: Burst-access memory supplying 72-bit pixel data chunks to parallel pixel pipelines with minimal inter-frame latency.

Use Value: Four-word burst reduces address bus activity by 3×, lowering power consumption and simplifying timing closure in 600 MHz pixel clock domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit (2M × 18), 10 ns async access; no DDR, no echo clocks, no PLL Limited to ≤200 MHz effective throughput; lacks QVLD and source-synchronous timing aids Select only for cost-sensitive, non-concurrent, lower-bandwidth designs where timing margin is abundant
ISSI IS61WV102418B 18-Mbit (512K × 36), 166 MHz sync, single-port, no burst, no QVLD Half the density, one-third the bandwidth, no concurrent R/W capability Only suitable for legacy upgrades or space-constrained systems where QDR II+ features are unused

Compared with IDT72T3615L10PA and IS61WV102418B, CY7C1563XV18-600BZXC delivers 4× higher density, 6× greater bandwidth, and deterministic source-synchronous timing-making it irreplaceable in modern packet-processing and real-time video architectures requiring sub-ns jitter control.

Availability

CY7C1563XV18-600BZXC is available at Aetrix Electronics and suitable for network infrastructure, telecom line cards, high-speed test equipment, and real-time video processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1563XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and long-term supply commitment for the QDR® II+ Xtreme SRAM family.

This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking, communications, and instrumentation applications.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted LOW, reverting the device to QDR I timing mode with 1-cycle read latency and maximum 167 MHz operation. In normal QDR II+ mode (DOFF HIGH), the PLL enables 2.5-cycle latency at 600 MHz. Timing parameters differ significantly between modes-designers must select appropriate AC specs from the relevant section of the datasheet based on DOFF state.

How do CQ and CQ echo clocks improve system timing margin?

CQ and CQ are free-running, phase-aligned copies of K and K generated internally and output with minimal skew. They provide a local clock reference at the receiver to capture Q[17:0] data, eliminating flight-time mismatch between clock and data paths. This source-synchronous scheme relaxes PCB routing constraints and ensures robust setup/hold margins at 1200 MT/s, especially over temperature and voltage variations.

Can CY7C1563XV18-600BZXC be used in depth-expanded configurations?

Yes-depth expansion is supported via RPS and WPS pins. Multiple devices can share the same address and data buses while using independent port selects to activate specific units. Each device responds only when its RPS or WPS is asserted, enabling seamless expansion beyond 4M × 18 without external logic. Byte write selects (BWS[1:0]) remain per-device for granular write control.

What is the role of the ZQ pin, and how should it be connected?

ZQ calibrates output driver impedance for CQ, CQ, and Q[17:0] to match the system data bus (typically 50 Ω). It must be connected to a precision resistor (RQ) tied to ground; impedance is set to 0.2 × RQ. For example, a 240 Ω resistor yields 48 Ω output drive. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and may cause undefined behavior.

CY7C1563XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1563XV18-600BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1563XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1563XV18-600BZXC reliable?

The price and inventory of CY7C1563XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1563XV18-600BZXC is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1563XV18-600BZXC?

For technical support, including CY7C1563XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1563XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C1563XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1563XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1563XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1563XV18-600BZXC?

All CY7C1563XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1563XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1563XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C1563XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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