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Cypress Semiconductor Corp CY7C1565KV18-400BZXC

Part No.:
CY7C1565KV18-400BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565KV18-400BZXC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:609

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Product details

Overview

CY7C1565KV18-400BZXC from Cypress Semiconductor is a 72-Mbit QDR® II+ SRAM with 2M × 36 organization, four-word burst architecture, and 2.5-cycle read latency. It features separate read/write ports, DDR interfaces on both ports (1100 MHz effective data rate at 550 MHz clock), and operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1565KV18-400BZXC datasheet, CY7C1565KV18-400BZXC pinout, CY7C1565KV18-400BZXC application, or CY7C1565KV18-400BZXC equivalent, key selection criteria include 550-MHz maximum clock frequency, QDR II+ 2.5-cycle latency mode, echo clocks (CQ/CQ) for timing margin, DOFF-controlled PLL enable/disable, and 165-ball FBGA package compatibility with HSTL-18 I/O.

Technical Context

The CY7C1565KV18-400BZXC implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed 19-bit address bus. Each port uses DDR interfaces synchronized to complementary K/K clocks, enabling concurrent read and write transactions without bus turnaround.

It integrates an internal PLL for precise data placement and supports two operational modes: QDR II+ mode (DOFF = HIGH, 2.5-cycle read latency) and QDR I mode (DOFF = LOW, 1-cycle latency up to 167 MHz). Echo clocks CQ/CQ are free-running and edge-aligned with K/K to simplify high-speed data capture.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (2M × 36)
Max Clock Frequency400 MHz - defines maximum sustained bandwidth of 2.88 GB/s (4 words × 36 bits × 400 MHz)
Read Latency2.5 cycles - determines minimum time from RPS assertion to first valid Q[35:0] word under DOFF = HIGH
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - enables interoperability with 1.5 V and 1.8 V HSTL-18 systems
Package165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch, thermal and signal integrity optimized for high-speed memory interfaces
Core SupplyVDD = 1.8 V ± 0.1 V - constrains power delivery design to tight regulation tolerance
Interface StandardHSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity compliance at 400 MHz DDR operation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
K / KComplementary input clocksRising edges control all synchronous register sampling and output timing; K drives read port, K drives write port
CQ / CQEcho clock outputsFree-running, edge-aligned copies of K/K used by external logic to latch Q[35:0] with zero setup/hold uncertainty
RPS / WPSRead/Write port selectActive-LOW enables port-specific access; deassertion tri-states Q[35:0] or ignores D[35:0], respectively
BWS[3:0]Byte write selectsEach active-LOW signal controls one 9-bit byte (BWS0: D[8:0], BWS3: D[35:27]) during burst writes
QVLDValid data indicatorAsserted HIGH synchronously with CQ/CQ to signal validity of current Q[35:0] word during burst reads
DOFFPLL disable controlLOW disables internal PLL, forcing QDR I mode (1-cycle latency, ≤167 MHz); HIGH enables QDR II+ mode
ZQOutput impedance calibrationConnected to external resistor to ground to tune CQ/CQ/Q[35:0] drive strength to match system trace impedance

Key Features

FeatureDesign Value
Separate read/write data pathsEliminates bus turnaround overhead and prevents data contention in full-duplex memory access
Four-word burst transferReduces required address bus toggling frequency by 4× versus single-word access, easing PCB routing
Programmable output impedance (ZQ)Enables dynamic matching of Q[35:0]/CQ/CQ drive strength to PCB trace impedance without external termination
JTAG 1149.1 test access portSupports boundary scan testing and in-system diagnostics without requiring dedicated test pads or probes
Depth expansion supportRPS/WPS signals allow stacking multiple devices to increase memory depth while maintaining independent port control

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet switches with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with concurrent read/write capability for traffic shaping and queue management.

Use Value: 2.5-cycle read latency and 400-MHz clock enable ≥2.88 GB/s sustained bandwidth, meeting 10G/40G line rate requirements without pipeline stalls.

Use Scenario: Frame buffering in carrier-grade SDH/SONET add-drop multiplexers handling OC-192 traffic.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store between asynchronous clock domains (e.g., line-side vs. system-side).

Use Value: Independent K/K clocks and echo clocks (CQ/CQ) eliminate inter-clock-domain skew issues, ensuring deterministic data capture across 400-MHz DDR interfaces.

Baseband Processing MemoryHigh-Speed Test Equipment FIFO

Use Scenario: Real-time symbol storage and reordering in LTE/5G baseband processors during channel estimation and MIMO processing.

IC Role / Device Role / Timing Role: Burst-access memory supporting parallel read-modify-write operations on 36-bit wide data paths.

Use Value: Four-word burst architecture delivers four consecutive symbols per access cycle, reducing address bus activity and improving power efficiency per bit transferred.

Use Scenario: Deep pattern storage and real-time comparison in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: Synchronous FIFO buffer with deterministic latency for stimulus/response correlation at 400 MHz.

Use Value: QVLD pin provides unambiguous, clock-aligned indication of valid output data, eliminating timing ambiguity in high-speed pass/fail decision logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C35128A-400BINLower density (36 Mbit), no echo clocks, no DOFF/PLL, 1-cycle fixed latency onlyLimited to simpler burst-less or lower-bandwidth designs; lacks QDR II+ timing flexibilitySelect when cost sensitivity outweighs need for 2.5-cycle latency or echo-clock–based timing margin
IS61WV102436B-400TQLISingle-port SSRAM, asynchronous interface, 400 MHz max clock not supported; max 167 MHzSuitable only for non-concurrent, lower-throughput buffering where port independence is unnecessaryChoose only if system does not require simultaneous read/write or DDR bandwidth; verify timing closure at reduced speed

Compared with AS7C35128A-400BIN and IS61WV102436B-400TQLI, the CY7C1565KV18-400BZXC uniquely delivers true dual-port QDR II+ operation with programmable latency, echo clocks, and 72-Mbit density-enabling deterministic, full-duplex memory access at 400 MHz that neither alternative supports.

Availability

CY7C1565KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing memory, and high-speed test equipment FIFO requiring stable component supply and long-term industrial availability.

Supply support for CY7C1565KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1565KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth, low-latency memory subsystems in networking infrastructure and telecom equipment where concurrent read/write throughput is critical.

FAQ

What is the function of the DOFF pin on CY7C1565KV18-400BZXC?

The DOFF (PLL Disable) pin controls the internal phase-locked loop: when pulled HIGH, the PLL is enabled and the device operates in QDR II+ mode with 2.5-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency but limited to ≤167 MHz. This pin must be externally pulled up via ≤10 kΩ resistor for normal operation.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) tied to ground to calibrate the output impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ. For example, a 100 Ω RQ sets output impedance to 20 Ω. Alternatively, tying ZQ directly to VDDQ enables minimum impedance mode. ZQ must never be left floating or connected to GND, as this disables calibration and risks signal integrity failure.

Can CY7C1565KV18-400BZXC operate with only one clock input?

No. The device requires both K and K complementary clock inputs for correct operation: K controls read-port timing (RPS, A, Q[35:0]), while K controls write-port timing (WPS, BWS[3:0], D[35:0]). Using only one clock violates the QDR II+ architecture and causes undefined behavior, including potential data corruption or port lockup. Both clocks must be present and properly phased.

What is the purpose of the QVLD signal during burst reads?

QVLD is a synchronous, edge-aligned output that asserts HIGH on the same rising edge of CQ/CQ when corresponding Q[35:0] data is valid. It eliminates the need for fixed delay-based data capture windows, allowing external logic to sample Q[35:0] with zero setup/hold uncertainty. QVLD remains HIGH for the duration of each valid 36-bit word in the four-word burst and transitions synchronously with echo clock edges.

CY7C1565KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1565KV18-400BZXC FAQ

1.How can I place an order for CY7C1565KV18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1565KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1565KV18-400BZXC reliable?

The price and inventory of CY7C1565KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565KV18-400BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1565KV18-400BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1565KV18-400BZXC transactions.

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4.How is shipping managed for CY7C1565KV18-400BZXC?

CY7C1565KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1565KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565KV18-400BZXC?

For technical support, including CY7C1565KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C1565KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1565KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1565KV18-400BZXC?

All CY7C1565KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1565KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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