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Cypress Semiconductor Corp CY7C1565V18-400BZI

Part No.:
CY7C1565V18-400BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1565V18-400BZI.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:234

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Product details

Overview

CY7C1565V18 from Cypress Semiconductor is a 72-Mbit QDR-II+ SRAM with 2M × 36 organization, 400 MHz clock operation, 2.5-cycle read latency, and DDR interfaces on independent read/write ports. It delivers 800 MT/s data transfer rate per port and supports burst-4 sequential access for high-bandwidth networking buffers and packet memory in telecom line cards.

For engineers reviewing the CY7C1565V18 datasheet, CY7C1565V18 pinout, CY7C1565V18 application, or CY7C1565V18 equivalent, key selection criteria include x36 bus width support, 165-ball FBGA (15 × 17 mm) package compatibility, HSTL I/O voltage range (VDDQ = 1.4V to 1.8V), and DLL-enabled precise timing alignment via CQ/CQ echo clocks.

Technical Context

This device implements QDR-II+ architecture with fully independent read and write ports sharing a single multiplexed address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling concurrent access without bus turnaround.

It uses synchronous self-timed writes, JTAG 1149.1 test access, and a Delay Lock Loop (DLL) to align output data with echo clocks CQ/CQ. The ZQ pin enables impedance tuning of Q[35:0], CQ, and CQ outputs to match system trace impedance.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 72 Mbit (2M × 36 configuration)
Maximum Clock Frequency 400 MHz - enables 800 MT/s DDR throughput per port
Read Latency 2.5 clock cycles - deterministic timing for pipeline-synchronized systems
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports HSTL-18 I/O standard
Burst Length 4-word burst - reduces address bus toggling frequency by 4× vs. single-word access
Package 165-ball FBGA (15 mm × 17 mm × 1.4 mm) - industry-standard footprint for high-pin-count SRAMs
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 400 MHz

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edges of K/K; supports full-width burst writes
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edges of K/K; tri-stated when RPS is deasserted
RPS Read port select (active LOW) Enables read burst initiation; output drivers auto-tri-state after completion
WPS Write port select (active LOW) Enables write burst initiation; ignores D[35:0] when deasserted
BWS[3:0] Byte write select (active LOW) Selects four 9-bit bytes for partial writes; preserves unselected bytes
K / K Positive/negative input clocks Both used for DDR timing; all synchronous operations referenced to rising edges
CQ / CQ Echo clocks Free-running, DLL-aligned copies of K/K; simplify high-speed data capture at receiver
QVLD Data valid indicator Edge-aligned with CQ/CQ; signals validity of Q[35:0] during read bursts
ZQ Impedance calibration input Connects to external 240 Ω resistor to ground to tune output driver impedance to 48 Ω
DOFF DLL disable control Pull LOW to disable DLL and revert to QDR-I mode (max 167 MHz)

Key Features

Feature Design Value
Independent read/write ports Eliminates data bus turnaround delay and contention - critical for full-duplex packet buffering
4-word burst architecture Reduces address bus switching frequency by 75%, lowering EMI and routing complexity
DLL-synchronized echo clocks (CQ/CQ) Enables source-synchronous data capture at 800 MT/s without complex PCB length matching
HSTL I/O with programmable drive strength Ensures clean signal integrity across 10+ inch traces at 400 MHz clock rates
JTAG 1149.1 boundary scan Supports automated test and debug of high-density SRAM interconnects on production PCBs

Applications

Telecom Line Card Buffering Network Processor Interface Memory

Use Scenario: High-speed packet buffering in 10G/40G Ethernet line cards requiring zero-latency read-after-write access.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared packet memory between ingress and egress traffic paths.

Use Value: Concurrent read/write eliminates arbitration overhead, enabling sustained 800 MT/s throughput per port for full-duplex line-rate processing.

Use Scenario: External memory for network processors performing deep packet inspection and header modification.

IC Role / Device Role / Timing Role: Burst-accessed instruction/data store synchronized to processor's K/K clocks.

Use Value: 2.5-cycle latency and echo-clock alignment reduce timing margin requirements, simplifying interface timing closure at 400 MHz.

Baseband Processing in Wireless Infrastructure High-Performance Test Equipment Memory

Use Scenario: Real-time frame buffering in LTE/5G baseband units handling multiple antenna streams and modulation schemes.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for FFT/IFFT and channel estimation pipelines.

Use Value: Independent ports allow simultaneous DMA reads (for processing) and writes (for new samples), avoiding pipeline stalls.

Use Scenario: Pattern memory in high-speed digital ATE systems requiring rapid stimulus/response storage.

IC Role / Device Role / Timing Role: Burst-programmable memory accessed via precision-controlled K/K clocks and echo-clocked sampling.

Use Value: ZQ-calibrated outputs and DLL-aligned CQ/CQ ensure sub-100 ps jitter tolerance for 1.6 Gb/s pattern generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1563V18 4M × 18 organization (72 Mbit), same 400 MHz speed and FBGA package Requires two devices for x36 data path; adds inter-device skew management Choose when board layout favors narrower 18-bit buses or legacy 4M×18 design reuse is required
AS7C3256B-15JCIN 256K × 36 sync SRAM, 15 ns access, 3.3 V only, no DDR or echo clocks Lacks QDR-II+ burst, DLL, or HSTL - limited to ≤100 MHz systems Only suitable for cost-sensitive, low-frequency control-plane buffers where bandwidth < 200 MB/s suffices

Compared with CY7C1563V18 and AS7C3256B-15JCIN, the CY7C1565V18 uniquely delivers native x36 width, 800 MT/s DDR throughput, and DLL-aligned echo clocks - eliminating inter-chip skew and enabling single-device 72-Mbit buffering at 400 MHz.

Availability

CY7C1565V18 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor interfacing, wireless baseband processing, and high-speed test equipment requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1565V18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding communications and industrial applications.

The QDR-II+ SRAM product line targets ultra-low-latency, high-throughput memory subsystems in networking, telecom, and test equipment where deterministic timing and concurrent access are mandatory.

FAQ

What is the minimum VDDQ voltage supported by CY7C1565V18?

The device supports VDDQ from 1.4 V to 1.8 V, exceeding the QDR Consortium's 1.5 V ± 0.1 V specification. Operation at 1.4 V is validated and maintains full 400 MHz functionality with HSTL-compatible signaling margins.

How does the ZQ pin affect output impedance calibration?

ZQ connects to an external 240 Ω resistor to ground, calibrating internal output drivers to 48 Ω (0.2 × 240 Ω). This matches standard 50 Ω PCB traces, minimizing reflections and ensuring signal integrity at 800 MT/s data rates.

Can CY7C1565V18 operate without the DLL enabled?

Yes - pulling DOFF LOW disables the DLL and reverts the device to QDR-I timing mode, supporting up to 167 MHz operation. In this mode, CQ/CQ become simple buffered copies of K/K, and QVLD alignment shifts accordingly.

What is the function of BWS[3:0] in x36 configuration?

BWS[3:0] controls four independent 9-bit byte lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Each active-low signal enables writing to its respective byte group while preserving others - essential for partial updates in packet headers.

CY7C1565V18-400BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1565V18-400BZI FAQ

1.How can I place an order for CY7C1565V18-400BZI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1565V18-400BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1565V18-400BZI reliable?

The price and inventory of CY7C1565V18-400BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1565V18-400BZI is usually 5 days.

3.What payment methods are accepted for CY7C1565V18-400BZI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1565V18-400BZI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1565V18-400BZI?

CY7C1565V18-400BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1565V18-400BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1565V18-400BZI?

For technical support, including CY7C1565V18-400BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1565V18-400BZI requirements.

6.How does Aetrix verify that CY7C1565V18-400BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1565V18-400BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1565V18-400BZI meets industry standards.

7.What is the process for return or replacement of CY7C1565V18-400BZI?

All CY7C1565V18-400BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1565V18-400BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1565V18-400BZI part is unused and in its original packaging.

Return procedure for CY7C1565V18-400BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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