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Cypress Semiconductor Corp CY7C1568KV18-450BZC

Part No.:
CY7C1568KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-450BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:184

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Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) DDR II+ synchronous SRAM with two-word burst architecture, 2.5-cycle read latency at 450 MHz, HSTL I/O interface, and dual echo clocks (CQ/CQ) for precise data capture. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is used in high-bandwidth networking line cards requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection considerations include DDR II+ timing compliance, 165-ball FBGA package compatibility, DOFF-controlled latency mode switching (2.5-cycle vs. 1-cycle), and JTAG 1149.1 test port integration for system-level validation.

Technical Context

This SRAM implements a pipelined synchronous architecture where address and control signals (LD, R/W, BWS[1:0]) are registered on the rising edge of K clock only, while write data is latched on both K and K rising edges. Read data is driven synchronously on both K and K edges, enabling true double-data-rate throughput.

The device integrates an internal PLL for accurate data placement and uses echo clocks CQ/CQ-phase-aligned to K/K-to eliminate board-level skew compensation. QVLD provides edge-aligned valid-data indication, and ZQ enables programmable output impedance matching to 0.2 × RQ via external resistor to ground.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization); supports depth expansion via LD-controlled burst addressing
Max Clock Frequency 450 MHz (K/K); enables 900 MT/s effective data rate with DDR interface
Read Latency 2.5 cycles when DOFF = HIGH; switches to 1-cycle DDR I mode when DOFF = LOW
I/O Voltage VDDQ = 1.4 V to 1.8 V; supports mixed-voltage systems with 1.5 V or 1.8 V I/O rails
Output Interface HSTL Class I inputs / variable-drive HSTL outputs; matched to 50 Ω transmission lines
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, Pb-free option available
Test Access IEEE 1149.1 JTAG TAP compliant; supports boundary scan, IDCODE, and BYPASS instructions

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares physical pins for input (write) and output (read); tristated automatically on deselect
K / K Differential clock inputs Rising edges of both clocks drive all synchronous operations; K only samples LD/R/W/BWS
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K; used by system logic to latch Q[17:0] without routing skew
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ; signals that DQ[17:0] contains valid burst-read data
DOFF PLL disable control Active-LOW; disables internal PLL to revert to DDR I timing (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration reference Connects to external resistor to ground; tunes CQ/CQ/DQ output drive strength to match 50 Ω bus
LD Load strobe Sampled on K rising edge; initiates address capture and defines start of burst transaction
BWS[1:0] Byte write select Active-LOW; BWS0 controls DQ[8:0], BWS1 controls DQ[17:9]; enables partial-word writes

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs; lowers EMI and routing complexity
Programmable read latency (2.5 or 1 cycle) DOFF pin selects between DDR II+ (high-speed) and DDR I (legacy-compatible) timing modes
Integrated echo clocks (CQ/CQ) Eliminates need for external delay-locked loops or PCB trace length matching for data capture
Synchronous self-timed writes On-chip write sequencing ensures reliable setup/hold margins without external write-enable timing control
JTAG 1149.1 boundary scan Enables production testability and interconnect verification in dense, multi-SRAM memory subsystems

Applications

Telecom Line Cards High-Speed Packet Buffers

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch fabric ASIC interfaces.

IC Role / Device Role / Timing Role: Low-latency, burst-access buffer synchronized to line-rate clock domains using K/K and CQ/CQ.

Use Value: 2.5-cycle latency at 450 MHz delivers 900 MT/s throughput with deterministic timing-critical for cut-through forwarding.

Use Scenario: Temporary storage of fragmented IP packets in deep-buffering routers before reassembly.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM acting as first-level packet buffer with byte-selectable writes via BWS[1:0].

Use Value: Partial-word write capability avoids full-word overwrites, reducing power and bus contention during partial updates.

Network Processor Co-Processors Test Equipment Pattern Memory

Use Scenario: Offloading table lookups (ACL, QoS, NAT) from main NPU core using tightly coupled SRAM.

IC Role / Device Role / Timing Role: Deterministic-latency memory mapped directly into NPU's AXI4 or Avalon-MM interface with echo-clock alignment.

Use Value: QVLD signal enables precise data-valid assertion without additional timing margin estimation in RTL design.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: High-reliability burst memory providing synchronized pattern delivery at 450 MHz clock domain.

Use Value: JTAG 1149.1 support allows in-system boundary scan verification of memory interconnect integrity pre-test execution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-15JIN Quad-data-rate (QDR) interface, 1.8 V core, no echo clocks or QVLD; 1-cycle latency only Lacks DDR II+ burst flexibility and DOFF-mode switching; requires external clock forwarding Prefer when system already uses QDR protocol stack and does not require latency mode selection
IS61WV102418BLL-10BLI Single-data-rate (SDR) 18-bit SRAM, 10 ns access, no DDR timing or PLL; 3.3 V I/O No burst, no echo clocks, no JTAG; incompatible voltage and timing architecture Only suitable for legacy designs where DDR II+ features are unnecessary and board space permits larger package

Compared with AS7C362000B-15JIN and IS61WV102418BLL-10BLI, CY7C1568KV18 uniquely combines programmable latency, integrated echo clocks, and JTAG testability-enabling higher bandwidth and lower system-level timing risk in new high-speed designs.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, network test equipment, and high-performance embedded computing requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, low-jitter memory interfacing in multi-gigabit networking and test instrumentation systems.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin is an active-LOW PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH, the PLL enables DDR II+ mode with 2.5-cycle latency and up to 550 MHz operation. This dual-mode capability allows backward compatibility and performance scaling within the same footprint.

How are the echo clocks CQ and CQ used in system design?

CQ and CQ are free-running output clocks synchronized to K and K, respectively. They are routed alongside DQ[17:0] to the receiving logic (e.g., FPGA or ASIC) to serve as capture clocks for read data. Because CQ/CQ track K/K phase and jitter, they eliminate the need for board-level trace length matching or external DLLs-reducing timing closure effort and improving signal integrity at 450 MHz.

Can CY7C1568KV18 be used in depth-expanded memory configurations?

Yes. The device supports depth expansion using LD and R/W signals across multiple units. When one device is deselected, its outputs tristate automatically on the next K rising edge, allowing seamless handoff to the next device in the chain without wait states. This behavior is guaranteed by internal synchronous control logic and is validated in Cypress's application note AN91394.

What is the role of the ZQ pin, and how should it be connected?

ZQ is an impedance calibration reference pin. It must be connected to a precision resistor (typically 50 Ω) tied to ground to calibrate CQ, CQ, and DQ output drive strength to 0.2 × RQ (i.e., 10 Ω). Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode (≈7 Ω). ZQ must never be left floating or tied to GND-doing so disables output tuning and risks signal integrity failure.

CY7C1568KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-450BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1568KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1568KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-450BZC is usually 5 days.

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For technical support, including CY7C1568KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-450BZC requirements.

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All CY7C1568KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-450BZC?

All CY7C1568KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1568KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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