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Cypress Semiconductor Corp CY7C1568KV18-500BZC

Part No.:
CY7C1568KV18-500BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-500BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:257

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Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA co-processor subsystems.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection criteria include DDR II+ timing compliance, echo clock (CQ/CQ) synchronization capability, QVLD data validity signaling, DOFF-configurable latency mode (2.5-cycle vs. 1-cycle), and HSTL-compatible drive strength matching.

Technical Context

This SRAM implements a pipelined synchronous architecture where all address, control, and data transfers are edge-triggered on rising edges of complementary clocks K and K. Read data bursts two 18-bit words per access, latched on alternating K/K edges, with output timing aligned to echo clocks CQ/CQ and validated by QVLD.

The device integrates a phase-locked loop (PLL) for accurate internal clock synthesis and data strobe alignment, supports programmable output impedance via ZQ calibration, and allows dynamic latency reconfiguration via DOFF pin - HIGH enables 2.5-cycle DDR II+ mode (up to 550 MHz), LOW reverts to 1-cycle DDR I mode (≤167 MHz).

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 4M × 18 - provides 72-bit-wide burst transfers across two sequential 18-bit words per address cycle.
Max Clock Frequency 550 MHz - enables 1100 MT/s effective data rate using double-data-rate transfers on K and K.
Read Latency 2.5 cycles (DOFF = HIGH) - defines minimum clock delay between LD assertion and first valid QVLD-aligned output word.
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V system I/O rails without level shifters.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch surface-mount package optimized for high-speed signal integrity and thermal dissipation.
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures impedance-matched, low-noise signaling at DDR speeds.
Timing Reference Echo clocks CQ/CQ - free-running, K-synchronized output clocks that eliminate board-level skew compensation for data capture.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus 18-bit DDR data path shared for input (write) and output (read); driven on rising edges of K/K with QVLD alignment.
K / K Differential clock inputs Complementary clocks defining all synchronous timing; K used for address/control latching, both used for data transfer.
CQ / CQ Output echo clocks Free-running, K-synchronized clocks provided to simplify receiver-side data capture without external delay tuning.
QVLD Valid data indicator Active-HIGH signal edge-aligned with CQ/CQ, indicating when DQ[17:0] carries valid burst-read data.
DOFF PLL disable control Active-LOW pin selecting DDR II+ (2.5-cycle latency, ≤550 MHz) or DDR I (1-cycle latency, ≤167 MHz) operation mode.
ZQ Output impedance calibration reference Connects to external resistor to ground to calibrate CQ/CQ/DQ output drive strength to 0.2 × RQ for signal integrity.
LD Load command input Synchronous enable sampled on K rising edge; initiates each burst transaction (address + R/W direction) for read/write.
BWS[1:0] Byte write select Two active-LOW signals controlling write masking of DQ[8:0] (BWS0) and DQ[17:9] (BWS1) during burst writes.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs, lowering system EMI and routing complexity.
Programmable 2.5/1-cycle latency DOFF pin enables runtime selection between high-performance DDR II+ mode and legacy DDR I compatibility mode.
Integrated echo clocks (CQ/CQ) Eliminates need for board-level trace length matching or adjustable delay elements in high-speed memory interfaces.
QVLD data validity indicator Provides unambiguous, clock-aligned confirmation of valid output data, simplifying FPGA or ASIC capture logic design.
HSTL I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature/process corners via on-die output impedance tuning.

Applications

Network Packet Buffering FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst-access buffer interfacing directly with MAC-layer logic via DDR-aligned HSTL bus.

Use Value: 1100 MT/s bandwidth and deterministic 2.5-cycle latency enable real-time header processing without pipeline stalls.

Use Scenario: Serving as scratchpad memory for FPGA-based digital signal processing engines performing real-time FFT or filtering.

IC Role / Device Role / Timing Role: Synchronous burst-access data store synchronized to FPGA fabric clocks via K/K and echoed CQ/CQ timing references.

Use Value: Echo clocks and QVLD eliminate setup/hold uncertainty, enabling reliable >500 MHz interface timing closure in FPGA designs.

Telecom Baseband Processing Industrial Real-Time Control Buffer

Use Scenario: Holding intermediate results in multi-carrier wireless baseband units (e.g., LTE/5G PHY layer) requiring deterministic memory access.

IC Role / Device Role / Timing Role: Pipelined SRAM providing burst-aligned data to DSP cores with sub-nanosecond timing margin via CQ-synchronized capture.

Use Value: PLL-derived internal timing and DOFF-selectable latency allow adaptation to varying algorithmic pipeline depths.

Use Scenario: Acting as deterministic latency buffer between real-time motion controller ASIC and servo drive interface in CNC systems.

IC Role / Device Role / Timing Role: Synchronous memory with guaranteed 2.5-cycle read response used for time-critical position/velocity data exchange.

Use Value: Fixed, jitter-free latency and QVLD validation ensure deterministic control loop timing under all operating conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-Mbit QDR II+ SRAM (2M × 18), 500 MHz max, no DOFF latency switching, fixed 2-cycle latency. Lacks configurable latency mode and echo clocks; requires external capture strobes instead of CQ/CQ. Select when strict QDR II+ compliance is required and latency flexibility is unnecessary.
ISSI IS61WV102418BLL-10BLI 18-Mbit asynchronous SRAM, 10 ns access, parallel interface, no DDR or burst capability. No clocked interface, no echo clocks or QVLD; unsuitable for >200 MHz burst applications. Consider only for cost-sensitive, low-bandwidth control-plane buffering where timing determinism is secondary.

Compared with IDT72T3615L10PA and IS61WV102418BLL-10BLI, CY7C1568KV18 uniquely delivers DDR II+ burst bandwidth with user-selectable latency and integrated echo-clock timing - critical for FPGA- and ASIC-based systems demanding both speed and interface simplicity.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing signal integrity, timing precision, and industrial reliability.

The CY7C1568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA, ASIC, and network processor platforms where echo-clock synchronization and latency configurability are essential.

FAQ

What is the function of the DOFF pin on CY7C1568KV18?

The DOFF pin is an active-LOW input that disables the internal PLL. When asserted LOW, the device operates in DDR I mode with 1-cycle read latency and maximum frequency of 167 MHz. When HIGH, it enables DDR II+ mode with 2.5-cycle latency and up to 550 MHz operation. Pull-up to VDDQ via ≤10 kΩ resistor is required for normal DDR II+ use.

How do CQ and CQ echo clocks improve system timing margin?

CQ and CQ are free-running, K-synchronized output clocks that track the same skew and jitter as the DQ[17:0] data outputs. By using CQ/CQ as capture clocks in the receiving logic (e.g., FPGA IDELAY/ISERDES), board-level trace skew and clock-to-data skew are inherently canceled, eliminating manual delay tuning and improving timing closure at >500 MHz.

Can CY7C1568KV18 operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. HSTL Class I input thresholds and variable-drive output buffers are designed to maintain signal integrity across this range. No configuration change is needed - simply supply VDDQ = 1.5 V and ensure ZQ calibration resistor is correctly sized.

What is the role of the ZQ pin and how should it be connected?

ZQ is an input used for output driver impedance calibration. It must be connected to a precision resistor (RQ) tied to ground; typical RQ = 240 Ω yields 48 Ω output impedance. Alternatively, connecting ZQ directly to VDDQ enables minimum-impedance mode. ZQ must never be left floating or tied to GND, as this disables calibration and risks signal integrity failure.

CY7C1568KV18-500BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-500BZC FAQ

1.How can I place an order for CY7C1568KV18-500BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1568KV18-500BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1568KV18-500BZC reliable?

The price and inventory of CY7C1568KV18-500BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-500BZC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1568KV18-500BZC transactions.

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CY7C1568KV18-500BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1568KV18-500BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1568KV18-500BZC?

For technical support, including CY7C1568KV18-500BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-500BZC requirements.

6.How does Aetrix verify that CY7C1568KV18-500BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1568KV18-500BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-500BZC meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-500BZC?

All CY7C1568KV18-500BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-500BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-500BZC part is unused and in its original packaging.

Return procedure for CY7C1568KV18-500BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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