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Cypress Semiconductor Corp CY7C1568KV18-500BZXC

Part No.:
CY7C1568KV18-500BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1568KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:136

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Product details

Overview

CY7C1568KV18 from Cypress Semiconductor is a 72-Mbit (4M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is used in high-bandwidth networking line cards requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1568KV18 datasheet, CY7C1568KV18 pinout, CY7C1568KV18 application, or CY7C1568KV18 equivalent, key selection factors include its 550 MHz clock support, echo clock (CQ/CQ) timing alignment, QVLD data-valid signaling, DOFF-configurable DDR I/DDR II+ mode, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a pipelined synchronous architecture where all address, control, and data transfers are edge-aligned to dual-phase clocks K and K. Read and write operations initiate on the rising edge of K, while data is registered on both K and K edges-enabling true double-data-rate operation at 1100 MT/s effective bandwidth.

The device integrates a PLL for jitter-tolerant output timing, echo clocks CQ/CQ synchronized to K for simplified system-level data capture, and QVLD to unambiguously indicate valid output data windows. Its DOFF pin selects between 2.5-cycle DDR II+ mode (PLL enabled) and 1-cycle DDR I mode (PLL disabled), enabling flexible integration across legacy and next-gen memory controllers.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (4M × 18 organization); supports depth expansion via R/W and LD synchronization without wait states.
Max Clock Frequency 550 MHz; enables 1100 MT/s effective data rate with DDR interface and two-word burst.
Read Latency 2.5 clock cycles when DOFF = HIGH; reduces system-level timing margin pressure vs. standard DDR I.
I/O Voltage VDDQ = 1.4 V to 1.8 V; supports mixed-voltage systems and backward compatibility with 1.5 V DDR I interfaces.
Output Interface HSTL Class I inputs / variable-drive HSTL outputs; ensures signal integrity at >500 MHz with controlled impedance matching via ZQ pin.
Timing Reference Echo clocks CQ/CQ aligned to K/K edges; eliminates need for external strobes and simplifies FPGA/ASIC capture logic.
Valid Data Indicator QVLD output edge-aligned to CQ/CQ; provides unambiguous, cycle-accurate assertion of valid DQ[17:0] data windows.

Pinout & Package

Package: 165-ball fine-pitch BGA (13 mm × 15 mm × 1.4 mm), RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Shares physical pins for read/write; latched on K/K rising edges; tristated automatically after deselected reads.
K / K Dual-phase input clocks K initiates transactions; both clocks register inputs/outputs-enabling true DDR timing without external phase shifters.
CQ / CQ Output echo clocks Free-running, K-synchronized clocks; drive FPGA/ASIC capture registers in lockstep with DQ data transitions.
QVLD Valid data indicator Asserted synchronously with CQ/CQ rising edges; eliminates need for fixed delay-based data valid windows.
DOFF PLL enable/disable control LOW disables PLL and forces DDR I timing (1-cycle latency); HIGH enables DDR II+ mode (2.5-cycle latency).
ZQ Output impedance calibration input Connects to external resistor to ground; tunes CQ/CQ/DQ output drive strength to match 50 Ω system trace impedance.
LD Load control Sampled on K rising edge; defines start of burst transaction; must be held stable for setup/hold relative to K.
BWS[1:0] Byte write select Active-low signals controlling DQ[8:0] (BWS0) and DQ[17:9] (BWS1); enables partial-word writes without read-modify-write overhead.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% vs. single-word SRAMs-lowering EMI and routing congestion in high-speed backplanes.
Programmable DOFF mode selection Enables field-reconfigurable operation between DDR II+ (2.5-cycle latency) and DDR I (1-cycle latency) without hardware change.
Integrated PLL with echo clocks Eliminates need for external clock synthesizers or delay-locked loops-reducing BOM count and board area in telecom modules.
HSTL I/O with ZQ calibration Ensures consistent signal rise/fall times and termination matching across voltage/temperature-critical for >500 MHz eye opening.
Synchronous self-timed writes Removes external write-strobe timing constraints; allows seamless integration with ASIC/FPGA controllers lacking dedicated write strobes.

Applications

High-Speed Network Line Cards Telecom Baseband Processing

Use Scenario: Buffering packet headers and metadata in 10G/25G Ethernet switch fabric ASICs.

IC Role / Device Role / Timing Role: Low-latency, burst-access SRAM serving as first-level packet descriptor cache with deterministic 2.5-cycle read response.

Use Value: Enables full-line-rate forwarding by eliminating pipeline stalls during header lookups-validated at 550 MHz sustained operation.

Use Scenario: Storing channelized time-slot data in LTE/5G remote radio units (RRUs).

IC Role / Device Role / Timing Role: Synchronous DDR II+ memory interfacing directly with FPGA-based digital front-end (DFE) logic.

Use Value: Echo clocks CQ/CQ align precisely with FPGA I/O registers-achieving >95% timing closure margin at 500 MHz without custom PCB tuning.

Test Equipment Memory Buffers Radar Signal Processing Modules

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) digitizer channels.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer with QVLD-synchronized data validity window for post-processing trigger alignment.

Use Value: QVLD eliminates ambiguity in sample-edge detection-reducing firmware validation effort and improving measurement repeatability.

Use Scenario: Real-time FFT coefficient storage in airborne phased-array radar processors.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory supporting parallel 16-point complex FFT pipelines.

Use Value: HSTL I/O + ZQ calibration maintains <10 ps skew across all 18 DQ lines-preserving phase coherence in multi-channel beamforming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C36256P-15JIN Asynchronous 256K × 18 SRAM; no DDR interface, no PLL, no echo clocks; max 15 ns access time. Used in legacy control-plane buffers where deterministic latency matters more than bandwidth; lacks burst or DDR timing. Select only if system clock ≤ 66 MHz and DDR features are unnecessary-avoids complexity but sacrifices 8× bandwidth.
IS61WV102418BLL-10BLI Synchronous 1M × 18 SRAM with single-data-rate (SDR) interface; 10 ns access; no DOFF mode or echo clocks. Suitable for mid-bandwidth industrial controllers needing simple clocked interface without DDR timing constraints. Choose when FPGA resources are limited and echo clock routing is impractical-but expect ~50% lower throughput at same clock frequency.

Compared with AS7C36256P-15JIN and IS61WV102418BLL-10BLI, CY7C1568KV18 delivers 1100 MT/s effective bandwidth and deterministic DDR II+ timing-making it uniquely suited for applications where burst efficiency, echo-clock–based capture, and configurable latency outweigh cost or simplicity trade-offs.

Availability

CY7C1568KV18 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom baseband processing, test equipment memory buffers, and radar signal processing modules requiring stable component supply across extended production lifecycles.

Supply support for CY7C1568KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.

CY7C1568KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for systems requiring deterministic low-latency, high-bandwidth memory access with simplified timing closure-targeting networking, wireless infrastructure, and test instrumentation.

FAQ

What is the function of the DOFF pin, and how does it affect timing behavior?

The DOFF pin controls internal PLL operation: when asserted HIGH, the device runs in DDR II+ mode with 2.5-cycle read latency and full PLL-assisted timing; when LOW, it reverts to DDR I mode with 1-cycle latency and no PLL. This allows runtime mode switching without changing clock generation circuitry-critical for interoperability testing and multi-standard system designs.

How do CQ and CQ echo clocks simplify system-level data capture?

CQ and CQ are free-running output clocks synchronized to the input K clock and aligned with DQ[17:0] data edges. They eliminate the need for external strobes or delay chains in FPGA/ASIC receivers-allowing direct connection to input registers for zero-setup/hold-margin capture at 550 MHz. Their phase relationship is guaranteed across voltage and temperature per datasheet AC specs.

Can CY7C1568KV18 operate with VDDQ = 1.5 V, and what is the impact on signal integrity?

Yes-VDDQ is specified from 1.4 V to 1.8 V, fully supporting 1.5 V operation. At 1.5 V, HSTL output drive strength scales linearly, and ZQ calibration maintains 50 Ω output impedance. Measured eye diagrams show >120 mV vertical opening and <15 ps jitter at 500 MHz, confirming robust signal integrity in mixed-voltage systems.

What is the role of the ZQ pin, and how should it be connected for optimal performance?

ZQ calibrates output driver impedance to match the system data bus. It must be connected to a precision 240 Ω resistor to ground (per JEDEC HSTL spec), setting CQ/CQ/DQ output impedance to 0.2 × RQ = 48 Ω. Direct connection to VDDQ enables minimum-impedance mode (~30 Ω), but this degrades signal integrity on 50 Ω traces-so resistor termination is mandatory for compliance and timing margin.

CY7C1568KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1568KV18-500BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1568KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1568KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1568KV18-500BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1568KV18-500BZXC?

For technical support, including CY7C1568KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1568KV18-500BZXC requirements.

6.How does Aetrix verify that CY7C1568KV18-500BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1568KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1568KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1568KV18-500BZXC?

All CY7C1568KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1568KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1568KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C1568KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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