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Cypress Semiconductor Corp CY7C1570KV18-400BZC

Part No.:
CY7C1570KV18-400BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-400BZC.pdf
Description:
IC SRAM 72MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,279

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 400 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors and FPGA co-processor subsystems.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include its 2M × 36 organization, dual-edge DDR timing with echo clocks CQ/CQ, QVLD data-valid signaling, DOFF-configurable latency mode (DDR II+ vs DDR I), and JTAG 1149.1 test access support.

Technical Context

The CY7C1570KV18 implements a pipelined synchronous SRAM core with DDR II+ peripheral logic, using two independent input clocks (K and K) to latch address/control on K's rising edge and register write data on both K and K edges. Read data is driven synchronously on both clock edges with echo-clock alignment.

Its internal 2M × 36 organization comprises two 1M × 36 arrays; burst reads deliver two sequential 36-bit words per access. The PLL enables accurate data-eye positioning at 400 MHz, while DOFF pin selection toggles between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes - preserving DDR I compatibility without re-design.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 2M × 36 - supports wide-data-path buffering for FPGA-to-ASIC interconnect or packet header processing.
Max Clock Frequency 400 MHz - defines maximum sustained bandwidth of 2.88 GB/s (36-bit × 2 × 400 MHz).
Read Latency 2.5 cycles (DOFF = HIGH) - enables tighter system timing margins than standard DDR I while maintaining burst efficiency.
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - allows interoperability with both 1.5 V and 1.8 V logic families without level shifters.
Output Interface HSTL Class I - ensures impedance-matched, low-noise signaling up to 1100 MT/s effective data rate.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides high pin count and thermal performance for dense PCB layouts.
Special Features QVLD output + CQ/CQ echo clocks - eliminates external strobe routing and simplifies high-speed data capture in multi-SRAM systems.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with echo-clock alignment.
K / K Differential clock inputs Positive/negative input clocks; all synchronous operations referenced to rising edges - enables true DDR timing without external delay tuning.
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K; used directly by FPGA/ASIC to capture DQ data without skew compensation.
QVLD Data validity indicator Asserted edge-aligned with CQ/CQ; signals when DQ[35:0] contains valid read data - replaces complex timing margin analysis.
DOFF PLL disable control Active-low pin; when grounded, disables PLL and reverts device to DDR I mode (1-cycle latency, ≤167 MHz) for backward compatibility.
BWS[3:0] Byte write select Four active-low signals controlling 36-bit write granularity: BWS0–BWS3 each enable one 9-bit byte - enables partial-word updates without read-modify-write.
LD Load strobe Synchronous address/control latch signal; sampled on K rising edge to initiate burst read/write - defines transaction boundary in pipelined operation.
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground; calibrates output driver impedance to 0.2 × RQ (~48 Ω) for HSTL signal integrity.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus frequency by 2× versus single-word SRAMs - lowers PCB routing complexity and timing closure effort.
Programmable 2.5-cycle or 1-cycle read latency DOFF pin selects DDR II+ (high-performance) or DDR I (legacy-compatible) timing - enables single-BOM flexibility across design generations.
Integrated PLL with echo clocks (CQ/CQ) Eliminates need for external delay-locked loops or board-level trace length matching - simplifies high-speed memory interface layout.
QVLD data-valid signal Provides deterministic, clock-aligned indication of valid output data - removes setup/hold uncertainty in FPGA capture logic.
HSTL Class I I/O with ZQ calibration Ensures consistent 48 Ω output impedance across voltage/temperature - guarantees signal integrity at 1100 MT/s without custom termination networks.

Applications

Network Packet Buffering FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst-access buffer interfacing directly to MAC-layer logic via HSTL.

Use Value: 2.5-cycle latency and echo-clock alignment enable deterministic 400 MHz read throughput without pipeline stalls or external FIFOs.

Use Scenario: Acting as scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based accelerators performing real-time video analytics.

IC Role / Device Role / Timing Role: Wide-data-path (36-bit) synchronous SRAM providing zero-wait-state access to compute kernels.

Use Value: 2M × 36 organization matches common FPGA data widths; QVLD eliminates timing margin guesswork in HDL capture logic.

Telecom Baseband Processing Industrial Real-Time Control

Use Scenario: Buffering time-critical channel estimation and precoding coefficients in massive MIMO base stations operating under strict jitter constraints.

IC Role / Device Role / Timing Role: Deterministic-latency memory supporting closed-loop feedback with sub-10 ns timing windows.

Use Value: PLL-synchronized CQ/CQ outputs and DOFF-selectable latency allow precise alignment to RF sampling clocks across temperature.

Use Scenario: Storing motion-control trajectory tables and sensor fusion buffers in servo drive controllers requiring guaranteed worst-case access time.

IC Role / Device Role / Timing Role: Fail-safe, non-volatile-equivalent SRAM with JTAG boundary scan for functional safety validation.

Use Value: IEEE 1149.1 compliance enables in-system test coverage; HSTL I/O ensures noise immunity in electrically noisy motor-drive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C336200B-400BIN 36-Mbit (1M × 36), 400 MHz, no PLL, no echo clocks, LVCMOS I/O only Lacks DDR timing precision and QVLD; requires external clock forwarding and careful trace-length matching Choose only if system lacks PLL resources and can tolerate higher timing margin risk.
IS61WV102436BLL-400BLI 36-Mbit (1M × 36), 400 MHz, no DDR interface, asynchronous control, SSTL-2 I/O Single-data-rate operation limits bandwidth to 1.44 GB/s; no burst or echo-clock support Select when legacy SRAM compatibility is mandatory and bandwidth demand is ≤1.5 GB/s.

Compared with AS7C336200B-400BIN and IS61WV102436BLL-400BLI, the CY7C1570KV18 delivers double the density (72 Mbit), true DDR II+ timing with built-in PLL and echo clocks, and deterministic QVLD signaling - enabling higher bandwidth, lower system-level timing overhead, and simplified layout in demanding communications infrastructure designs.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor cache, and telecom baseband processing requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1570KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for ultra-low-latency, high-bandwidth buffering in networking ASICs, FPGAs, and baseband processors where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL when pulled LOW. In this state, the device operates in DDR I mode with 1-cycle read latency and a maximum frequency of 167 MHz. When DOFF is HIGH, the PLL is enabled, supporting 2.5-cycle latency and full 400 MHz operation. This pin allows runtime mode switching or hardware configuration for backward compatibility.

How does the QVLD signal improve system timing reliability?

QVLD is a synchronous output asserted edge-aligned with CQ and CQ echo clocks, indicating precisely when DQ[35:0] data is valid. Unlike fixed-delay assumptions, QVLD eliminates setup/hold uncertainty at the receiver - especially critical in multi-SRAM depth-expanded systems - allowing FPGA or ASIC logic to sample data without guard bands or complex timing closure iterations.

Can CY7C1570KV18 operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. At 1.5 V, HSTL Class I output drivers maintain proper voltage thresholds and impedance calibration via ZQ, ensuring signal integrity and compatibility with 1.5 V FPGA I/O banks without level-shifting circuitry.

What is the purpose of the ZQ pin and how should it be connected?

ZQ is an impedance calibration reference pin requiring connection to a 240 Ω resistor tied to ground. This enables the device to tune its HSTL output drivers to ~48 Ω (0.2 × 240 Ω), matching typical PCB trace impedance. Leaving ZQ unconnected or tying it to GND violates specifications and degrades signal integrity; direct connection to VDDQ enables minimum-impedance mode but forfeits calibration accuracy.

CY7C1570KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-400BZC FAQ

1.How can I place an order for CY7C1570KV18-400BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-400BZC reliable?

The price and inventory of CY7C1570KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-400BZC is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-400BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-400BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-400BZC?

CY7C1570KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-400BZC?

For technical support, including CY7C1570KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-400BZC requirements.

6.How does Aetrix verify that CY7C1570KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-400BZC?

All CY7C1570KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C1570KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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