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Cypress Semiconductor Corp CY7C1570KV18-450BZXI

Part No.:
CY7C1570KV18-450BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-450BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,989

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM with 2M × 36 organization, 450 MHz maximum clock frequency, 2.5-cycle read latency (when DOFF = HIGH), and HSTL I/O interface operating at 1.4–1.8 V VDDQ. It delivers 1100 MT/s effective data rate via double-data-rate transfers synchronized to K/K clocks and is used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include burst depth (2-word), echo-clock–driven data capture (CQ/CQ), QVLD timing alignment, PLL-enabled latency mode selection (DOFF), and FBGA-165 package compatibility with high-density routing constraints.

Technical Context

This device implements a synchronous, pipelined DDR II+ architecture where all address, control, and data signals are registered on rising edges of complementary K/K clocks. Read operations initiate on LD/R/W assertion and complete in two consecutive K/K cycles, delivering two 36-bit words per access with QVLD edge-aligned to CQ/CQ.

The internal PLL enables precise 2.5-cycle latency timing when DOFF is HIGH; disabling the PLL (DOFF = LOW) reverts operation to DDR I mode with 1-cycle latency and ≤167 MHz max frequency. Echo clocks CQ/CQ are free-running, phase-locked to K, and drive external data capture without system-level skew compensation.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, configured as 2M × 36 (two 1M × 36 arrays)
Max Clock Frequency 450 MHz - sets maximum sustained bandwidth of 3.24 GB/s (2 × 36-bit × 450 MHz)
Read Latency 2.5 clock cycles (with DOFF = HIGH) - determines minimum read-to-read turnaround and pipeline depth
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V memory controllers
Output Interface HSTL Class I - ensures impedance-matched, low-noise signaling up to 1100 MT/s
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - enables high I/O count with controlled thermal resistance (θJA = 29.5°C/W)
Power Supply Core VDD = 1.8 V ± 0.1 V; I/O VDDQ independent - allows separate power domain optimization

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with QVLD alignment
K / K Complementary input clocks Rising edges control all synchronous register sampling and output timing; K initiates transactions, K/K jointly drive burst outputs
CQ / CQ Output echo clocks Free-running, PLL-synchronized clocks aligned to data edges; eliminate need for board-level delay tuning in multi-SRAM systems
QVLD Valid data indicator Asserted synchronously with CQ/CQ rising edges to signal valid DQ[35:0] - enables reliable latch timing in FPGA/ASIC receivers
DOFF PLL disable control Active-low pin that switches between DDR II+ (2.5-cycle latency, 450 MHz) and DDR I (1-cycle latency, ≤167 MHz) modes
BWS[3:0] Byte write select inputs Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enable partial-word writes without read-modify-write
LD Load strobe Synchronous address/control latch enable; sampled on K rising edge to define start of burst transaction
R/W Read/write direction Sampled with LD on K rising edge; HIGH = read, LOW = write - defines access type for loaded address
ZQ Output impedance calibration Connects to external 240 Ω resistor to GND to calibrate CQ/CQ/DQ output drive strength to 0.2 × RQ (48 Ω)

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers system EMI and simplifies controller address sequencing
Programmable 2.5-cycle or 1-cycle read latency DOFF pin selects between high-performance DDR II+ mode (450 MHz) and legacy-compatible DDR I mode (≤167 MHz) - enables design reuse across generations
Edge-aligned echo clocks (CQ/CQ) + QVLD Eliminates receiver-side deskew logic in FPGAs/ASICs - simplifies PCB layout and timing closure for >500 MHz DDR interfaces
HSTL Class I I/O with ZQ calibration Ensures consistent 48 Ω output impedance across voltage/temperature - maintains signal integrity on long, unterminated memory buses
Internal self-timed write circuitry Removes requirement for external write-enable timing control - guarantees reliable write completion independent of clock jitter or skew

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with line-rate throughput.

IC Role / Device Role / Timing Role: High-speed burst-access buffer interfacing directly to MAC or switch fabric ASICs via DDR interface.

Use Value: 2.5-cycle latency and 450 MHz clock support 3.24 GB/s sustained bandwidth - meets 10G/40G line card buffering requirements without interleaving.

Use Scenario: Frame reassembly and header processing in carrier-grade SDH/SONET line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor and payload memory for traffic management engines.

Use Value: QVLD + CQ/CQ alignment enables deterministic data capture in Xilinx Ultrascale+ GTY transceivers - eliminates setup/hold violations at 1100 MT/s.

High-Frequency Trading Engine Cache Test Equipment Pattern Memory

Use Scenario: Low-latency order book lookup and market data caching in FPGA-accelerated trading platforms.

IC Role / Device Role / Timing Role: Deterministic-access memory mapped to soft CPU or custom datapath logic with cycle-accurate timing.

Use Value: DOFF-selectable latency modes allow runtime trade-off between bandwidth (2.5-cycle) and determinism (1-cycle DDR I) - critical for sub-microsecond latency SLA compliance.

Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Burst-mode waveform memory synchronized to high-speed digital I/O channels.

Use Value: HSTL I/O and ZQ calibration ensure <±5 ps jitter on 450 MHz clock domains - meets IEEE 1149.1 boundary scan timing margins for production test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-15JIN 512K × 36, 15 ns async access, no DDR interface or echo clocks Used in legacy control-plane buffers where timing determinism > bandwidth Select only if system lacks DDR clock infrastructure and tolerates 15 ns latency penalty vs. CY7C1570KV18's 2.2 ns (2.5-cycle @ 450 MHz)
IS61WV102432BLL-10BLI 1M × 32, 10 ns async, 3.3 V core/I/O, no burst or PLL Cost-sensitive industrial control memory with parallel bus simplicity Choose when board space permits larger SOJ package and design cannot accommodate 165-ball FBGA or 1.8 V core supply

Compared with AS7C362000B-15JIN and IS61WV102432BLL-10BLI, CY7C1570KV18 provides 7× higher bandwidth and deterministic DDR timing but requires complementary clock routing, echo clock receivers, and tighter power delivery - making it optimal for new high-speed designs where latency predictability and throughput outweigh integration effort.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-frequency trading engine cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1570KV18 belongs to the QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in packet-switched infrastructure where burst efficiency and echo-clock–assisted data capture are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal phase-locked loop. When pulled HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency and supports up to 450 MHz clock frequency. When pulled LOW, it reverts to DDR I mode with 1-cycle latency and a maximum clock rate of 167 MHz - enabling backward compatibility with legacy controllers.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of DQ[35:0], CQ, and CQ pins to 48 Ω (0.2 × 240 Ω). This calibration compensates for process, voltage, and temperature variations, ensuring consistent signal integrity on high-speed memory buses. Leaving ZQ unconnected or tying it to GND violates specification and causes undefined drive strength.

Can CY7C1570KV18 be used without the echo clocks CQ/CQ?

No - CQ and CQ are mandatory for valid data capture. The device drives output data edge-aligned to these echo clocks, and QVLD is synchronized to them. External receivers must use CQ/CQ (not K/K) to latch DQ[35:0]. Omitting CQ/CQ routing results in failed timing closure and data corruption, as no alternative capture mechanism (e.g., source-synchronous with K/K) is supported.

What is the purpose of the BWS[3:0] signals in write operations?

BWS[3:0] are active-low byte write select signals that enable partial-word writes without read-modify-write cycles. For CY7C1570KV18, BWS0–BWS3 each control a 9-bit lane (D[8:0], D[17:9], D[26:18], D[35:27]). Asserting only selected BWS lines allows writing to specific byte groups while preserving others - essential for protocol header updates and non-aligned memory writes in networking applications.

CY7C1570KV18-450BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-450BZXI FAQ

1.How can I place an order for CY7C1570KV18-450BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-450BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-450BZXI reliable?

The price and inventory of CY7C1570KV18-450BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-450BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-450BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-450BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-450BZXI?

CY7C1570KV18-450BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-450BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-450BZXI?

For technical support, including CY7C1570KV18-450BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-450BZXI requirements.

6.How does Aetrix verify that CY7C1570KV18-450BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-450BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-450BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-450BZXI?

All CY7C1570KV18-450BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-450BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-450BZXI part is unused and in its original packaging.

Return procedure for CY7C1570KV18-450BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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