Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1570KV18-500BZC

Part No.:
CY7C1570KV18-500BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-500BZC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:117

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit synchronous DDR II+ SRAM configured as 2M × 36, operating at 500 MHz with 2.5-cycle read latency and double-data-rate interface delivering 1000 MT/s bandwidth. It features echo clocks (CQ/CQ), QVLD data-valid indicator, and programmable impedance via ZQ pin. Used in high-speed packet buffering and network switch fabric memory subsystems requiring deterministic low-latency burst access.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection considerations include DDR II+ timing mode (DOFF-controlled), HSTL I/O compatibility, 165-ball FBGA mechanical fit, and synchronous self-timed write architecture for predictable timing closure in multi-chip depth-expanded systems.

Technical Context

The CY7C1570KV18 implements a pipelined synchronous SRAM core with dual-clock DDR interface: K and K clocks control all register transfers, with address latched on alternate rising edges and data transferred on both edges. Its internal organization comprises two 1M × 36 arrays, supporting two-word burst reads/writes per transaction.

It integrates a PLL for precise data placement and echo clocks (CQ/CQ) aligned to output data edges-eliminating system-level skew compensation. The DOFF pin selects between DDR II+ mode (2.5-cycle latency, up to 550 MHz) and DDR I mode (1-cycle latency, ≤167 MHz), enabling flexible timing migration paths.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 500 MHz - defines maximum sustained burst throughput of 1000 MT/s
Read Latency 2.5 clock cycles - enables deterministic timing for high-speed pipeline alignment
I/O Voltage VDDQ = 1.4 V to 1.8 V - supports mixed-voltage system integration with HSTL-compatible drivers
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layout
Core Supply VDD = 1.8 V ± 0.1 V - strict regulation required for stable SRAM cell operation
Interface Type DDR II+ with echo clocks (CQ/CQ) and QVLD - eliminates external strobe routing and simplifies capture logic

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit wide DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with echo-clock alignment
K / K Differential input clocks Rising edges control all synchronous registers; K used for address/control latching, both used for data transfer timing
CQ / CQ Output echo clocks Free-running, edge-aligned to output data; used by system logic to sample QVLD-synchronized DQ outputs without additional delay compensation
QVLD Data validity indicator Active-HIGH signal edge-aligned to CQ/CQ; asserts only when DQ[35:0] contains valid burst data, eliminating need for fixed delay windows
DOFF PLL disable control Active-LOW pin selecting DDR II+ (DOFF = HIGH) or DDR I (DOFF = LOW) timing modes - critical for backward compatibility and frequency scaling
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground; tunes output driver impedance to 0.2 × RQ (~48 Ω) for controlled HSTL signaling integrity
LD Load enable Synchronous command latch signal; sampled on K rising edge to initiate burst address capture and define transaction boundary
BWS[3:0] Byte write select Four active-LOW signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without read-modify-write overhead

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs, lowering system EMI and routing congestion in high-pin-count designs
Programmable impedance via ZQ Enables dynamic output driver tuning to match PCB trace impedance - improves signal integrity without external termination resistors
QVLD + echo clocks (CQ/CQ) Eliminates system-level data capture uncertainty; allows direct connection of DQ outputs to FPGA/ASIC input registers without phase alignment logic
DOFF-selectable timing mode Supports seamless migration from legacy DDR I systems (≤167 MHz) to DDR II+ (up to 550 MHz) using same PCB layout and firmware interface
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming of configuration pins - critical for high-reliability telecom and industrial applications

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency burst SRAM acting as primary frame buffer with deterministic 2.5-cycle read response.

Use Value: Enables full-duplex 10 GbE switching without packet loss under worst-case burst traffic, leveraging DDR II+ bandwidth and echo-clock–based capture.

Use Scenario: Holding protocol stack state and packet metadata in carrier-grade DSLAM and OLT line cards.

IC Role / Device Role / Timing Role: Synchronous memory subsystem providing jitter-free data staging between PHY and MAC layers.

Use Value: Guarantees sub-ns timing margin for time-critical control plane operations using QVLD-synchronized reads and self-timed writes.

Depth-Expanded Memory Arrays High-Speed Test Equipment FIFO

Use Scenario: Constructing 72-Mbit × N-wide memory banks across multiple CY7C1570KV18 devices for ASIC emulation memory.

IC Role / Device Role / Timing Role: Identical timing-per-device enables zero-wait-state depth expansion using shared K/K clocks and independent LD control.

Use Value: Eliminates inter-device skew compensation logic and reduces FPGA resource usage for memory controller design.

Use Scenario: Capturing real-time analog-to-digital samples in automated test equipment with nanosecond timestamp resolution.

IC Role / Device Role / Timing Role: Deterministic-latency FIFO buffer synchronizing ADC sampling clock (K) with system processing clock.

Use Value: Maintains precise sample-to-timestamp correlation using QVLD-driven interrupt generation and echo-clock–aligned data capture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256B-15JIN Asynchronous 256K × 16 SRAM, 15 ns access, no DDR interface or echo clocks Limited to ≤100 MHz burst rates; requires external handshake logic for flow control Select only for cost-sensitive, non-burst, low-frequency control-plane storage where timing determinism is not required
IS61WV102432BLL-10BLI Synchronous 32M × 32 SRAM, 10 ns cycle time, single-data-rate, no DOFF or ZQ calibration No DDR bandwidth doubling; lacks QVLD and echo clocks - increases FPGA capture logic complexity Prefer when higher density (1 Gbit) is needed and system clock < 200 MHz; avoid if >500 MT/s throughput or DDR timing closure is required

Compared with AS7C3256B-15JIN and IS61WV102432BLL-10BLI, the CY7C1570KV18 delivers 4× higher effective bandwidth via DDR II+, eliminates system-level timing uncertainty through QVLD and echo clocks, and supports scalable depth expansion without added skew management - making it uniquely suited for deterministic high-throughput packet and sample buffering.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, depth-expanded memory arrays, and high-speed test equipment FIFOs requiring stable component supply, long-term lifecycle support, and guaranteed FBGA package consistency.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1570KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, designed specifically for deterministic, high-bandwidth memory interfacing in networking infrastructure and test equipment where sub-cycle timing predictability and echo-clock–assisted data capture are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF (PLL Turn Off) pin is an active-LOW control that disables the internal phase-locked loop. When asserted LOW, the device reverts to DDR I timing mode with 1-cycle read latency and maximum 167 MHz operation. When held HIGH (typically via 10 kΩ pull-up), DDR II+ mode activates with 2.5-cycle latency and up to 550 MHz capability. This pin enables hardware-selectable timing compatibility across generations.

How does the ZQ pin affect signal integrity in CY7C1570KV18?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of output driver impedance to precisely 48 Ω (0.2 × RQ). This matches typical HSTL-18 transmission lines, minimizing reflections and improving eye diagram margins without requiring discrete termination resistors on the PCB. Leaving ZQ unconnected or tying it to GND violates specification and degrades signal integrity.

Can CY7C1570KV18 be used in depth-expanded configurations without wait states?

Yes. The device supports zero-wait-state depth expansion because all synchronous inputs (LD, R/W, BWS) are registered on the K clock, and outputs (DQ, QVLD, CQ) are edge-aligned to K/K. When multiple devices share K/K clocks and use independent LD signals, their burst accesses align deterministically - allowing seamless interleaving without system-level skew compensation or added pipeline stages.

What is the role of QVLD and how does it differ from traditional RDY signals?

QVLD is a synchronous, edge-aligned validity indicator that asserts HIGH only when DQ[35:0] carries valid burst data - synchronized precisely to CQ/CQ rising edges. Unlike asynchronous RDY signals, QVLD eliminates setup/hold uncertainty and enables direct connection to FPGA input registers without delay chains or metastability hardening, reducing logic overhead and improving timing closure in high-speed capture paths.

CY7C1570KV18-500BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-500BZC FAQ

1.How can I place an order for CY7C1570KV18-500BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-500BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-500BZC reliable?

The price and inventory of CY7C1570KV18-500BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-500BZC is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-500BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-500BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-500BZC?

CY7C1570KV18-500BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-500BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-500BZC?

For technical support, including CY7C1570KV18-500BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-500BZC requirements.

6.How does Aetrix verify that CY7C1570KV18-500BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-500BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-500BZC meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-500BZC?

All CY7C1570KV18-500BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-500BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-500BZC part is unused and in its original packaging.

Return procedure for CY7C1570KV18-500BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1570KV18-500BZC Tags

  • CY7C1570KV18-500BZC
  • CY7C1570KV18-500BZC PDF
  • CY7C1570KV18-500BZC Datasheet
  • CY7C1570KV18-500BZC Specifications
  • CY7C1570KV18-500BZC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1570KV18-500BZC
  • Buy CY7C1570KV18-500BZC
  • CY7C1570KV18-500BZC Price
  • CY7C1570KV18-500BZC Distributor
  • CY7C1570KV18-500BZC Supplier
  • CY7C1570KV18-500BZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER