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Cypress Semiconductor Corp CY7C1570KV18-500BZXC

Part No.:
CY7C1570KV18-500BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-500BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:295

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Product details

Overview

CY7C1570KV18-500BZXC from Cypress Semiconductor is a 72-Mbit synchronous pipelined DDR II+ SRAM configured as 2M × 36, operating at 500 MHz with 2.5-cycle read latency and dual-edge DDR data transfer at 1000 Mbps. It features echo clocks (CQ/CQ), QVLD data-valid indicator, and programmable impedance matching via ZQ pin. Used in high-bandwidth networking line cards and FPGA co-processor buffers where deterministic low-latency burst access is required.

For engineers reviewing the CY7C1570KV18-500BZXC datasheet, CY7C1570KV18-500BZXC pinout, CY7C1570KV18-500BZXC application, or CY7C1570KV18-500BZXC equivalent, key selection criteria include DDR II+ timing compliance, 2.5-cycle vs. 1-cycle latency mode switching via DOFF, HSTL I/O compatibility, and FBGA-165 package thermal/mechanical constraints for dense PCB layouts.

Technical Context

This SRAM implements a two-word burst architecture with synchronous address latching on alternating K/K rising edges. Read data is driven on both K and K rising edges, synchronized to echo clocks CQ/CQ, enabling precise data capture without external strobes. The internal PLL ensures accurate data placement relative to clock edges when DOFF = HIGH.

All control inputs (R/W, LD, BWS[3:0]) are registered on K rising edge; data inputs DQ[35:0] are sampled on both K and K edges. Write operations use on-chip self-timed logic, while output tristating occurs automatically after deselection-critical for depth-expanded memory stacks without wait-state insertion.

Key Specifications

Parameter Value and Actual Design Meaning
Density 72 Mbit (2M × 36 configuration)
Max Clock Frequency 500 MHz - defines maximum sustained burst bandwidth of 36 Gb/s (18-bit × 2 words × 500 MHz × 2 edges)
Read Latency 2.5 cycles (DOFF = HIGH) - enables DDR II+ timing; switches to 1-cycle DDR I mode when DOFF = LOW
I/O Voltage VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL-compatible systems
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch footprint requiring controlled-impedance PCB routing and thermal vias
Core Supply VDD = 1.8 V ± 0.1 V - strict regulation needed to maintain timing margins and avoid soft errors
Output Impedance Control ZQ pin calibrates CQ/CQ/DQ output drivers to 0.2 × RQ - eliminates need for external termination resistors on data bus

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit wide DDR interface; samples input on K/K rising edges, drives output aligned to CQ/CQ; tristates automatically on deselect
K / K Differential clock inputs Rising edges of both clocks control all synchronous registers; K initiates transactions, K enables double-data-rate sampling and output timing
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K used by system logic to capture DQ data without skew compensation circuitry
QVLD Data validity indicator Asserted edge-aligned with CQ/CQ to signal valid DQ[35:0] - eliminates need for fixed delay assumptions in FPGA capture logic
DOFF PLL enable/disable control Active-low pin that disables internal PLL to revert to DDR I timing (1-cycle latency, ≤167 MHz); critical for fallback mode validation
ZQ Impedance calibration reference Connects to external resistor to ground (RQ) to tune DQ/CQ driver strength; avoids board-level termination and reduces signal integrity risk
BWS[3:0] Byte write select inputs Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial writes without read-modify-write overhead
LD Load command input Sampled on K rising edge to latch address and R/W state; defines start of each 2-word burst transaction - no separate chip-select required

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs - lowers EMI and simplifies address routing in high-speed designs
DDR II+ with 2.5-cycle latency Delivers deterministic timing margin over standard DDR I; supports higher clock rates (up to 550 MHz) while maintaining setup/hold compliance
Integrated echo clocks (CQ/CQ) Eliminates need for board-level clock forwarding or delay-locked loops - simplifies timing closure in multi-SRAM systems
Programmable output impedance (ZQ) Enables dynamic driver strength tuning to match PCB trace impedance - improves signal integrity without discrete termination components
JTAG 1149.1 test access port Supports boundary-scan testing and in-system programming - essential for production test coverage in high-reliability telecom hardware

Applications

High-Speed Network Line Cards FPGA Co-Processor Buffers

Use Scenario: Buffering packet headers and metadata between MAC and switch fabric ASICs in 10G/25G Ethernet line cards.

IC Role / Device Role / Timing Role: Low-latency, burst-access shared memory providing deterministic 2.5-cycle read response to support wire-speed packet classification.

Use Value: Eliminates pipeline stalls during back-to-back header reads; echo clocks synchronize FPGA capture logic without custom delay tuning.

Use Scenario: Staging real-time sensor fusion data between multiple FPGA compute engines in autonomous vehicle perception subsystems.

IC Role / Device Role / Timing Role: High-bandwidth, low-jitter memory buffer enabling parallel read/write access across distributed processing units.

Use Value: Byte-write select (BWS[3:0]) allows independent updates to 9-bit subfields without corrupting adjacent data - critical for timestamped sensor streams.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Storing channelized IQ samples in 4G/5G baseband units requiring simultaneous access by multiple DSP cores.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM with deterministic latency supporting time-critical FFT and filtering pipelines.

Use Value: DOFF pin enables runtime switching between DDR II+ (500 MHz) and DDR I (167 MHz) modes for power/performance trade-off during low-load periods.

Use Scenario: Holding high-speed digital stimulus patterns in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Burst-access memory delivering precise, jitter-free pattern sequences synchronized to system clock domain.

Use Value: QVLD output provides unambiguous data-valid timing reference - removes uncertainty in pattern alignment at >1 Gb/s data rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-500BIN 512K × 36 QDR-II+ SRAM, 500 MHz, 1.8 V core, but lacks echo clocks and QVLD; uses separate K/K and CQ/CQ pins No integrated echo clock simplifies layout but requires external capture logic; lower density (18 Mbit vs. 72 Mbit) Select when system already implements dedicated echo clock generation or when lower density suffices for cost-sensitive ATE platforms
IS61WV102436BLL-5BLI 1M × 36 sync SRAM, 166 MHz max, single-data-rate, no DDR or burst capability; 3.3 V tolerant I/O Higher latency (3–5 cycles), no DDR timing - unsuitable for bandwidth-constrained applications above 200 MHz Choose only for legacy 3.3 V systems where DDR complexity is prohibitive and bandwidth requirements are ≤1.2 Gb/s

Compared with AS7C362000B-500BIN and IS61WV102436BLL-5BLI, CY7C1570KV18-500BZXC delivers 4× higher density and integrated timing aids (CQ/CQ, QVLD, ZQ), making it optimal for new 500 MHz DDR II+ designs where signal integrity and deterministic latency are non-negotiable.

Availability

CY7C1570KV18-500BZXC is available at Aetrix Electronics and suitable for high-speed network line cards, FPGA co-processor buffers, telecom baseband processing, and automated test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1570KV18-500BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1570KV18 belongs to Cypress's QDR/DDR II+ SRAM product line, engineered specifically for applications demanding deterministic low-latency burst access, precise DDR timing control, and robust signal integrity in multi-gigabit memory interfaces.

FAQ

What is the function of the DOFF pin on CY7C1570KV18-500BZXC?

The DOFF (DLL/PLL Turn Off) pin is an active-low control that disables the internal phase-locked loop. When asserted LOW, the device reverts to DDR I timing with 1-cycle read latency and a maximum frequency of 167 MHz. When held HIGH (typically via 10 kΩ pull-up), DDR II+ mode activates with 2.5-cycle latency and full 500 MHz operation. This pin enables runtime mode switching for power/performance optimization.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (RQ) tied to ground, enabling on-die calibration of DQ, CQ, and CQ output driver impedance to exactly 0.2 × RQ. This matches the memory's output impedance to the PCB trace impedance (typically 50 Ω), minimizing reflections and improving eye diagram margins without requiring discrete series or parallel termination resistors on the board.

Can CY7C1570KV18-500BZXC be used in depth-expanded memory configurations?

Yes - its automatic output tristating upon read deselect, combined with echo clock synchronization and deterministic 2.5-cycle latency, enables seamless depth expansion. When one device completes its burst and tristates, the next device in the stack can begin driving valid data on the same bus without wait states, provided LD and R/W are properly sequenced across devices using shared K/K clocks.

What is the significance of the QVLD signal in system timing design?

QVLD is a synchronous output that asserts edge-aligned with CQ and CQ to indicate when DQ[35:0] data is valid. Unlike fixed-delay assumptions, QVLD eliminates timing uncertainty in FPGA or ASIC capture logic - designers can use it directly as a latch enable, removing the need for manual delay tuning or IDELAYCTRL calibration in Xilinx/Intel devices operating above 500 Mbps per pin.

CY7C1570KV18-500BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-500BZXC FAQ

1.How can I place an order for CY7C1570KV18-500BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-500BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-500BZXC reliable?

The price and inventory of CY7C1570KV18-500BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-500BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-500BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-500BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-500BZXC?

CY7C1570KV18-500BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-500BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-500BZXC?

For technical support, including CY7C1570KV18-500BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-500BZXC requirements.

6.How does Aetrix verify that CY7C1570KV18-500BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-500BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-500BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-500BZXC?

All CY7C1570KV18-500BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-500BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-500BZXC part is unused and in its original packaging.

Return procedure for CY7C1570KV18-500BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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