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Cypress Semiconductor Corp CY7C1570KV18-500BZXI

Part No.:
CY7C1570KV18-500BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-500BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:302

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 500 MHz, HSTL I/O interfaces, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth memory buffer in network packet processors requiring deterministic low-latency DDR access.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include its 500 MHz clock rating, dual-edge echo clocks (CQ/CQ), QVLD data-valid indicator, DOFF-configurable latency mode (DDR II+ vs DDR I), and 36-bit wide synchronous burst interface.

Technical Context

The device implements a pipelined synchronous architecture where all address, control, and data signals are registered on rising edges of complementary K/K clocks. Read operations initiate on K's rising edge, with first 36-bit word output aligned to K and second to K - both synchronized to echo clocks CQ/CQ.

It integrates a PLL for accurate internal timing alignment and supports programmable output impedance via ZQ pin. The DOFF pin selects between 2.5-cycle DDR II+ mode (PLL enabled) and 1-cycle DDR I mode (PLL disabled), altering maximum frequency (500 MHz vs 167 MHz) and timing behavior.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit, 2M × 36 configuration - delivers 36-bit parallel data per access, optimized for wide-bus packet buffering.
Max Clock Frequency 500 MHz - enables 1.0 Gbps per data line (DDR), yielding 36 Gbps aggregate bandwidth.
Read Latency 2.5 cycles (DOFF = HIGH) - deterministic timing for pipeline-aligned memory reads in high-speed switch ASICs.
I/O Voltage Support VDDQ = 1.4 V to 1.8 V - interoperable with both 1.5 V and 1.8 V HSTL-18/15 systems without level shifters.
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing in telecom line cards.
Output Timing Aid CQ/CQ echo clocks + QVLD - eliminates system-level data capture skew; QVLD edge-aligned to CQ/CQ confirms valid window.
Write Control BWS[3:0] byte write enables - allows partial 36-bit writes without read-modify-write, reducing bus contention.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on K/K with echo-clock alignment.
K / K Complementary input clocks K initiates transactions; both K and K register inputs/outputs - enables true double-data-rate operation.
CQ / CQ Output echo clocks Free-running, phase-matched to K/K; used by system logic to latch DQ[35:0] without routing clock skew.
QVLD Data validity indicator Asserted synchronously with CQ/CQ rising edges; signals when DQ[35:0] contains valid burst data.
DOFF PLL enable/disable control LOW disables PLL → DDR I mode (1-cycle latency, ≤167 MHz); HIGH enables DDR II+ mode (2.5-cycle, up to 550 MHz).
ZQ Output impedance calibration input Connects to external RQ-to-GND resistor; tunes CQ/CQ/DQ output drive strength to match 50 Ω PCB trace impedance.
BWS[3:0] Byte write select (active LOW) Four independent 9-bit write masks - enables selective update of DQ[8:0], [17:9], [26:18], [35:27] during single burst.
LD Load strobe Sampled on K rising edge; defines start of bus cycle - latches A[19:0], R/W, and BWS for burst transaction.

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing.
Programmable 2.5-cycle or 1-cycle latency DOFF pin selects DDR II+ (high-speed, PLL-timed) or DDR I (legacy-compatible, lower-frequency) operation - supports multi-generation system reuse.
HSTL-18/15 compatible I/O Supports 1.4–1.8 V VDDQ - eliminates need for external voltage translators when interfacing to FPGA or ASIC I/O banks.
Integrated impedance calibration (ZQ) Automatically adjusts output driver strength to maintain 50 Ω termination - improves signal integrity without board-level resistors.
JTAG 1149.1 test access port Enables boundary-scan testing of memory interconnects in dense PCB assemblies - critical for telecom equipment validation.

Applications

Network Packet Buffering High-Speed Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards before classification or forwarding decisions.

IC Role / Device Role / Timing Role: Synchronous burst-access memory buffer with deterministic 2.5-cycle latency, synchronized to switch fabric clock domain via K/K and CQ/CQ.

Use Value: Enables zero-wait-state packet queuing at 500 MHz clock rate, supporting >36 Gbps throughput with minimal controller overhead.

Use Scenario: Acting as shared lookup table memory for TCAM-assisted forwarding engines in modular chassis switches.

IC Role / Device Role / Timing Role: Wide (36-bit) DDR II+ SRAM providing parallel access to multi-field match entries; QVLD ensures precise data capture timing.

Use Value: Eliminates external deserialization logic by delivering full match results in two consecutive 36-bit bursts aligned to echo clocks.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding real-time channel equalization coefficients and FFT buffers in LTE/5G remote radio units (RRUs).

IC Role / Device Role / Timing Role: Low-jitter, PLL-stabilized memory with HSTL I/O - matches FPGA-based DSP timing budgets under thermal variation.

Use Value: Maintains <±50 ps clock-to-output skew across temperature (–40°C to +85°C), ensuring consistent symbol processing latency.

Use Scenario: Storing high-speed digital stimulus and expected response patterns in automated test equipment (ATE) pin electronics.

IC Role / Device Role / Timing Role: Deterministic burst SRAM with QVLD and echo clocks - enables sub-nanosecond pattern edge alignment without custom timing calibration.

Use Value: Reduces pattern generator setup time by 40% versus asynchronous SRAMs, due to elimination of per-pin delay tuning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 4M × 18 organization, 350 MHz max, no echo clocks or QVLD; uses SSTL-2 I/O (2.5 V) Limited to lower-frequency baseband or legacy test systems; requires level-shifting for 1.8 V domains Select when cost sensitivity outweighs bandwidth needs and 2.5 V supply is available.
ISSI IS61WV102436B 1M × 36, 200 MHz async SRAM; no DDR, no PLL, no burst - single-word random access only Suitable for non-real-time control-plane memory where latency variability is acceptable Choose only for low-cost, non-critical buffering where deterministic timing is not required.

Compared with IDT72T36150 and IS61WV102436B, CY7C1570KV18 uniquely delivers 500 MHz DDR II+ performance with echo-clock–assisted data capture and programmable latency - making it the sole option for new designs targeting ≥36 Gbps sustained memory bandwidth with sub-cycle timing predictability.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, telecom baseband processing, and test equipment pattern memory requiring stable component supply across extended temperature ranges (–40°C to +85°C).

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1570KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-throughput memory interfacing in packet-switched infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF pin controls the internal PLL: when asserted HIGH, it enables DDR II+ mode with 2.5-cycle read latency and operation up to 550 MHz; when pulled LOW, it disables the PLL and reverts the device to DDR I mode with 1-cycle latency and a maximum frequency of 167 MHz. This dual-mode capability allows backward compatibility with legacy controllers while supporting next-generation bandwidth requirements.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external precision resistor (typically 50 Ω to ground) to calibrate the output driver impedance of DQ[35:0], CQ, and CQ pins. This calibration ensures output termination matches the PCB trace characteristic impedance (usually 50 Ω), minimizing reflections and maintaining clean eye diagrams at 500 MHz DDR rates - eliminating the need for discrete series or parallel termination resistors.

Can CY7C1570KV18 operate with only one clock input?

No. CY7C1570KV18 requires both complementary K and K clock inputs for correct operation. All synchronous inputs (address, R/W, LD, BWS) are registered on K's rising edge, while data inputs and outputs are registered on both K and K rising edges. Omitting either clock violates timing specifications and prevents reliable DDR data transfer - the device does not support single-ended clock mode.

What is the purpose of the QVLD signal in system design?

QVLD is a synchronous output that pulses high in alignment with the rising edges of CQ and CQ, indicating precisely when DQ[35:0] carries valid data during a read burst. Unlike clock-enable schemes, QVLD provides unambiguous, skew-compensated data validity - enabling system FPGAs or ASICs to capture full 36-bit words without complex deskew logic or per-bit delay tuning, significantly simplifying high-speed memory interface design.

CY7C1570KV18-500BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
500 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-500BZXI FAQ

1.How can I place an order for CY7C1570KV18-500BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-500BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-500BZXI reliable?

The price and inventory of CY7C1570KV18-500BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-500BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-500BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-500BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-500BZXI?

CY7C1570KV18-500BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-500BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-500BZXI?

For technical support, including CY7C1570KV18-500BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-500BZXI requirements.

6.How does Aetrix verify that CY7C1570KV18-500BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-500BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-500BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-500BZXI?

All CY7C1570KV18-500BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-500BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-500BZXI part is unused and in its original packaging.

Return procedure for CY7C1570KV18-500BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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