Cypress Semiconductor Corp CY7C1570KV18-550BZXC

Overview

CY7C1570KV18-550BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm). It serves as high-bandwidth buffer memory in network packet processors requiring deterministic low-latency DDR timing.

For engineers reviewing the CY7C1570KV18-550BZXC datasheet, CY7C1570KV18-550BZXC pinout, CY7C1570KV18-550BZXC application, or CY7C1570KV18-550BZXC equivalent, this page delivers verified specifications, validated pin functions, real-world use cases in depth-expanded memory subsystems, and confirmed alternative parts with documented functional trade-offs.

Technical Context

The device implements a pipelined synchronous architecture where all address, control, and data transfers are edge-aligned to dual input clocks (K and K̄), enabling true double-data-rate operation at 1100 MT/s effective bandwidth. Internal logic uses rising edges only for register sampling, and echo clocks (CQ/CQ̄) are phase-matched to K/K̄ for simplified system-level data capture without per-device skew compensation.

It supports two operational modes via the DOFF pin: DDR II+ mode (DOFF = HIGH) delivers 2.5-cycle read latency at up to 550 MHz, while DDR I mode (DOFF = LOW) reduces latency to 1 cycle but limits max frequency to 167 MHz. The integrated PLL ensures accurate data-eye positioning across temperature and voltage variations.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C1568KV18-550BZXC, the 2M × 36 configuration offers native 36-bit width and reduced chip count in wide-data-path systems, while AS7C3256A-15JCIN lacks all DDR II+ features and cannot meet the 550 MHz timing or deterministic latency requirements of modern packet-processing applications.

Availability

CY7C1570KV18-550BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, test equipment waveform storage, and FPGA-based protocol analyzers requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1570KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1570KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in networking ASICs, FPGA co-processors, and test instrumentation where burst efficiency and timing precision are critical.

FAQ

What is the function of the DOFF pin on CY7C1570KV18-550BZXC?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL. When asserted LOW, the device reverts to DDR I timing with 1-cycle read latency and a maximum operating frequency of 167 MHz. When held HIGH (typically via 10 kΩ pull-up), it enables full DDR II+ operation at 550 MHz with 2.5-cycle latency. This pin allows runtime mode switching without changing clock sources or PCB layout.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance of DQ[35:0], CQ, and CQ̄ pins to precisely 48 Ω (0.2 × 240 Ω). This on-die termination matching minimizes reflections and ensures consistent signal rise/fall times across process, voltage, and temperature - eliminating the need for discrete series or parallel termination resistors on the PCB.

Can CY7C1570KV18-550BZXC be used in depth-expanded memory configurations?

Yes - the device supports seamless depth expansion via its QVLD output and echo clocks (CQ/CQ̄). When multiple CY7C1570KV18 devices share K/K̄ and are configured identically, QVLD provides synchronized validity indication across all chips, while CQ/CQ̄ ensure data edges align despite minor board-level skew. No additional glue logic or timing compensation is required.

What is the role of BWS[3:0] in write operations?

BWS[3:0] are active-low byte write select signals that independently enable or mask four 9-bit data lanes (D[8:0], D[17:9], D[26:18], D[35:27]). During a write cycle, only lanes with BWS[x] = LOW are updated; others retain prior contents. This enables true partial-word writes without read-modify-write sequences - essential for efficient metadata updates in packet processing applications.