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Cypress Semiconductor Corp CY7C1570KV18-550BZXI

Part No.:
CY7C1570KV18-550BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570KV18-550BZXI.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:985

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Product details

Overview

CY7C1570KV18 from Cypress Semiconductor is a 72-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 2M × 36 bits and operating at 550 MHz clock frequency (1100 MT/s data rate). It features 2.5-cycle read latency when DOFF is HIGH, HSTL I/O with programmable impedance via ZQ pin, and dual echo clocks (CQ/CQ) for precise DDR data capture. Used in high-bandwidth networking line cards and packet buffer subsystems requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1570KV18 datasheet, CY7C1570KV18 pinout, CY7C1570KV18 application, or CY7C1570KV18 equivalent, key selection criteria include its 2M × 36 organization, 550 MHz K-clock support, DOFF-configurable latency mode (DDR II+ vs DDR I), HSTL-18 I/O compliance, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density PCB layouts.

Technical Context

This device implements a synchronous burst SRAM core with dual-edge DDR interface logic, where all address, control, and data signals are registered on rising edges of complementary K/K clocks. Internal pipelining enables back-to-back read initiation every K cycle, while the PLL ensures accurate data placement relative to echo clocks CQ/CQ.

The CY7C1570KV18 supports byte-selectable writes via four BWS inputs (BWS[3:0]), enabling partial 36-bit word updates without read-modify-write cycles. Its QVLD signal provides edge-aligned indication of valid output data, and ZQ pin allows dynamic output impedance calibration to match system trace impedance - critical for signal integrity above 500 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 72 Mbit / 2M × 36-bit synchronous burst SRAM
Maximum Clock Frequency 550 MHz K-clock (1100 MT/s effective data rate)
Read Latency 2.5 K-cycles (DOFF = HIGH); 1-cycle (DOFF = LOW, DDR I mode)
Supply Voltages Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V
I/O Standard HSTL Class I inputs; variable-drive HSTL outputs
Package 165-ball fine-pitch BGA (13 × 15 × 1.4 mm, 0.8 mm pitch)
Special Features Integrated PLL, echo clocks (CQ/CQ), QVLD valid indicator, ZQ impedance tuning

Pinout & Package

Available in a 165-ball fine-pitch FBGA package (13 × 15 × 1.4 mm, 0.8 mm ball pitch), RoHS-compliant and offered in both Pb-free and non-Pb-free variants. Pin assignments are optimized for DDR timing closure and signal integrity in high-speed memory subsystems.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR data path; sampled on K/K rising edges during writes, driven on K/K rising edges during reads with echo-clock alignment
K / K Complementary input clocks Rising edges control all synchronous registers; K initiates transactions, K times write data capture and second-word read output
CQ / CQ Output echo clocks Free-running, phase-matched copies of K/K used by external logic to latch DQ data without skew compensation circuitry
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ to signal that DQ[35:0] contains stable, valid read data
DOFF PLL disable control Active-Low input; when grounded, disables PLL and reverts device to DDR I timing (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration reference Connect to resistor-to-ground (RQ) to calibrate CQ/CQ/DQ output drive strength to 0.2 × RQ; or tie to VDDQ for minimum impedance
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]); enables partial-word writes without RMW overhead
LD Load strobe Synchronous command latch; sampled on K rising edge to define address and R/W direction for next burst transaction

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs, lowering system-level EMI and routing complexity
Programmable read latency mode DOFF pin selects between 2.5-cycle DDR II+ mode (high bandwidth) or 1-cycle DDR I mode (legacy compatibility)
On-die impedance calibration (ZQ) Enables automatic output driver tuning to match PCB trace impedance, eliminating need for external termination resistors
Edge-aligned QVLD signal Removes uncertainty in data-valid window detection, simplifying FPGA/ASIC capture logic design
JTAG 1149.1 test access port Supports boundary-scan testing and in-system programming without additional debug hardware

Applications

High-Speed Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch ASIC interfaces.

IC Role / Device Role / Timing Role: Low-latency, burst-mode SRAM acting as first-level packet buffer with deterministic 2.5-cycle read response.

Use Value: Enables full-line-rate forwarding without pipeline stalls; echo clocks eliminate interconnect skew between ASIC and memory.

Use Scenario: Serving as shared buffer memory in multi-port SONET/SDH framer modules with strict jitter tolerance.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM providing jitter-immune data storage aligned to system reference clock domain.

Use Value: PLL-based timing ensures sub-100 ps data-eye alignment across temperature and voltage, meeting ITU-T G.823 jitter specs.

Network Processor Co-Processor Memory Test Equipment Pattern Memory

Use Scenario: Offloading deep packet inspection lookups from NPU cores using parallel CAM/SRAM hybrid architectures.

IC Role / Device Role / Timing Role: High-throughput burst SRAM supplying 1100 MT/s data to custom search engines with minimal latency penalty.

Use Value: 36-bit wide interface reduces memory channel count by 2× versus 18-bit alternatives, saving board area and power.

Use Scenario: Storing stimulus/response vectors in high-speed ATE systems requiring repeatable nanosecond-accurate timing.

IC Role / Device Role / Timing Role: Deterministic-access SRAM delivering synchronized pattern data to multiple parallel pin electronics drivers.

Use Value: QVLD + echo clocks guarantee zero-jitter data validity windows, eliminating setup/hold violations in 550 MHz test cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-15JIN 512K × 36-bit QDR-II, 300 MHz max clock, no PLL, fixed 1.5-cycle latency Lacks echo clocks and QVLD; requires external capture logic and manual skew management Select when lower cost and simpler timing closure outweigh need for 550 MHz bandwidth and jitter immunity
MT47H64M16HR-37E 1 Gbit DDR2 SDRAM, 375 MHz, asynchronous refresh, higher latency (CAS=5), no burst-of-two mode Requires DRAM controller, refresh management, and longer access time; unsuitable for deterministic real-time buffering Choose only if system already uses DDR2 infrastructure and can tolerate ~15 ns average read latency

Compared with AS7C362000B-15JIN and MT47H64M16HR-37E, the CY7C1570KV18 uniquely delivers 550 MHz DDR II+ operation with integrated PLL, echo clocks, and QVLD - enabling true deterministic sub-2-ns read response in high-reliability telecom and test equipment designs.

Availability

CY7C1570KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor co-processor memory, and automated test equipment pattern storage requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1570KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1570KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth memory interfacing in networking and test instrumentation systems where timing predictability is critical.

FAQ

What is the function of the DOFF pin on CY7C1570KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL when pulled to ground. In this state, the device operates in DDR I mode with 1-cycle read latency and maximum clock frequency reduced to 167 MHz. For full DDR II+ performance at 550 MHz with 2.5-cycle latency, DOFF must be tied HIGH via a ≤10 kΩ pull-up resistor to VDDQ.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) to ground, allowing the device to calibrate its output driver impedance to 0.2 × RQ. This matches the SRAM's DQ and CQ outputs to the PCB trace impedance, minimizing reflections and improving signal integrity. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (no calibration), which may increase power but simplify layout.

Can CY7C1570KV18 be used in depth-expanded memory configurations?

Yes - the device supports seamless depth expansion using standard address decoding. When one device deselects, its outputs tristate automatically on the next rising edge of K, eliminating bus contention. The QVLD signal remains synchronized across devices, enabling clean handoff between adjacent SRAMs in multi-chip memory banks without added wait states.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They are driven out synchronously with DQ data and serve as dedicated capture clocks for external logic (e.g., FPGA input registers), removing the need for complex deskew circuits or delay-locked loops to align data and clock paths in high-speed designs.

CY7C1570KV18-550BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570KV18-550BZXI FAQ

1.How can I place an order for CY7C1570KV18-550BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570KV18-550BZXI reliable?

The price and inventory of CY7C1570KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570KV18-550BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1570KV18-550BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570KV18-550BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570KV18-550BZXI?

CY7C1570KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570KV18-550BZXI?

For technical support, including CY7C1570KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570KV18-550BZXI requirements.

6.How does Aetrix verify that CY7C1570KV18-550BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1570KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570KV18-550BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1570KV18-550BZXI?

All CY7C1570KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570KV18-550BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570KV18-550BZXI part is unused and in its original packaging.

Return procedure for CY7C1570KV18-550BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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