Cypress Semiconductor Corp CY7C1570XV18-600BZXC

Overview

CY7C1570XV18-600BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous DDR II+ Xtreme SRAM with two-word burst architecture, 2.5-cycle read latency at 600 MHz, HSTL I/O interface, and integrated PLL for precise DDR timing. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4–1.6 V, delivering 1266 MT/s data throughput in high-bandwidth networking and test equipment memory buffers.

For engineers reviewing the CY7C1570XV18-600BZXC datasheet, CY7C1570XV18-600BZXC pinout, CY7C1570XV18-600BZXC application, or CY7C1570XV18-600BZXC equivalent, this page provides verified package mapping (165-ball FBGA), confirmed 36-bit bidirectional DQ[35:0] interface, echo clock synchronization (CQ/CQ), QVLD timing alignment, and DOFF-controlled latency mode selection between DDR I (1-cycle) and DDR II+ (2.5-cycle) operation.

Technical Context

This SRAM implements a synchronous pipelined architecture with dual input clocks (K/K) - all address, control, and write data sampled on K rising edges, while read data is driven on both K and K rising edges. The device uses echo clocks CQ/CQ aligned to output data, eliminating system-level skew compensation.

Internally organized as two 1M × 36 arrays, it supports byte-write via four synchronous BWS[3:0] inputs and features programmable output impedance tuning via ZQ pin. The PLL enables accurate data placement at 600 MHz; when disabled (DOFF = LOW), it reverts to DDR I timing with ≤167 MHz operation.

Key Specifications

Pinout & Package

Package: 165-ball FBGA (13 mm × 15 mm × 1.4 mm), ball pitch 0.8 mm, thermal pad exposed on underside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C362000B-15JIN and IS61WV204832BLL-10BLI, CY7C1570XV18-600BZXC delivers 12× higher effective bandwidth, eliminates external strobe routing via echo clocks, and enables latency-mode flexibility through DOFF-critical for scalable, future-proof memory subsystems.

Availability

CY7C1570XV18-600BZXC is available at Aetrix Electronics and suitable for high-speed test equipment, network packet buffers, and medical imaging data acquisition requiring stable component supply across extended product lifecycles.

Supply support for CY7C1570XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1570XV18 belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory buffering in FPGA- and ASIC-based systems operating above 500 MHz.

FAQ

What is the function of the DOFF pin on CY7C1570XV18-600BZXC?

The DOFF (PLL Turn Off) pin is an active-LOW control that disables the internal phase-locked loop. When asserted LOW, the device operates in DDR I mode with 1-cycle read latency and maximum frequency limited to 167 MHz. When HIGH (typically pulled up via ≤10 kΩ resistor), the PLL is enabled, supporting 2.5-cycle latency at 600 MHz. This pin directly controls the fundamental timing architecture and must be configured at power-up.

How does the ZQ pin calibrate output drive strength?

The ZQ pin connects to an external precision resistor (RQ) tied to ground; the device measures RQ and sets its DQ, CQ, and CQ output driver impedance to 0.2 × RQ. For standard 50 Ω trace matching, a 250 Ω resistor is used. Alternatively, tying ZQ to VDDQ enables minimum-impedance mode. ZQ must never be left floating or connected to GND, as this disables calibration and risks signal integrity failure.

Can CY7C1570XV18-600BZXC operate with only the K clock?

No. The device requires both K and K differential clock inputs for correct operation. All synchronous inputs (address, R/W, LD, BWS) are sampled on the rising edge of K, while write data is registered on both K and K rising edges, and read data is driven on both. Omitting K violates timing specifications and prevents functional operation - the K/K pair is mandatory per the DDR II+ architecture.

What is the role of QVLD in system timing design?

QVLD is a synchronous output that pulses HIGH on the same rising edge of CQ/CQ when valid data appears on DQ[35:0]. It replaces the need for fixed setup/hold margin calculations by providing a deterministic, clock-aligned validity signal - enabling receivers to sample DQ only when QVLD is asserted, thereby simplifying timing closure in multi-SRAM depth-expanded systems and eliminating inter-device skew concerns.