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Cypress Semiconductor Corp CY7C1570XV18-633BZXC

Part No.:
CY7C1570XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1570XV18-633BZXC.pdf
Description:
IC SRAM 72MBIT PAR 165FBGA
Quantity:
Payment:
Payment
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Inventory:275

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Product details

Overview

CY7C1570XV18-633BZXC from Cypress Semiconductor is a 72-Mbit (2M × 36) synchronous pipelined DDR II+ Xtreme SRAM with 2.5-cycle read latency, 633 MHz clock operation, and HSTL I/O interface. It delivers 1266 MT/s data throughput via double-data-rate transfers on rising edges of complementary K/K clocks, and integrates echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking and test equipment memory buffers.

For engineers reviewing the CY7C1570XV18-633BZXC datasheet, CY7C1570XV18-633BZXC pinout, CY7C1570XV18-633BZXC application, or CY7C1570XV18-633BZXC equivalent, key selection criteria include its 2M × 36 organization, 1.8 V core / 1.4–1.6 V I/O supply, JTAG 1149.1 compliance, and PLL-enabled timing alignment for deterministic DDR II+ burst reads.

Technical Context

This SRAM implements a two-word burst architecture where each address access retrieves two consecutive 36-bit words on alternating K/K rising edges. Its internal PLL synchronizes echo clocks CQ/CQ to K, enabling source-synchronous data capture without board-level skew compensation.

All synchronous inputs (A, R/W, LD, BWS[3:0]) are registered on K's rising edge; write data is latched on both K and K edges; read data is driven on both K and K edges with QVLD edge-aligned to CQ/CQ. DOFF pin selects between 2.5-cycle DDR II+ mode (DOFF = HIGH) and 1-cycle DDR I mode (DOFF = LOW).

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization72 Mbit, configured as 2M × 36 - supports wide-data-path buffering in packet processors and FPGA co-processor interfaces.
Max Clock Frequency633 MHz - enables 1266 MT/s effective data rate with strict setup/hold timing referenced to K/K edges.
Read Latency2.5 cycles (DOFF = HIGH) - defines minimum clock-to-output delay for first valid word; critical for pipeline depth planning in real-time systems.
Core / I/O VoltageVDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.6 V - decoupled supplies allow independent optimization of core logic and I/O drive strength.
I/O StandardHSTL Class I inputs, variable-drive HSTL outputs - ensures signal integrity at >600 MHz with controlled impedance matching via ZQ calibration.
Package165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch footprint compatible with high-density PCB layouts in telecom line cards.
JTAG SupportIEEE 1149.1 compliant TAP - enables boundary-scan testing and in-system programming without additional debug hardware.

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Synchronous bidirectional data bus36-bit wide DDR data path; inputs sampled on K/K rising edges during writes; outputs driven on K/K rising edges during reads with QVLD alignment.
K / KDifferential clock inputsComplementary system clocks; all synchronous operations (address, control, data) timed to rising edges - no internal clock division required.
CQ / CQOutput echo clocksFree-running, phase-matched copies of K/K used by external logic to latch DQ data - eliminates need for separate strobes or deskew circuitry.
QVLDValid data indicatorActive-HIGH signal edge-aligned with CQ/CQ; asserts exactly when DQ[35:0] contains stable, valid read data - simplifies receiver sampling logic.
DOFFPLL disable controlActive-LOW input; when grounded, disables internal PLL and reverts device to DDR I timing (1-cycle latency, ≤167 MHz max) for legacy compatibility.
ZQImpedance calibration referenceConnects to external 240 Ω resistor to GND; calibrates output driver impedance to 0.2 × RQ (~48 Ω) for matched HSTL termination.
BWS[3:0]Byte write selectFour active-LOW signals controlling 9-bit byte lanes; enables partial writes without read-modify-write - essential for protocol header updates in packet memory.
LDLoad enableSynchronous command latch; sampled on K rising edge to define start of burst transaction - determines address and R/W direction for subsequent cycle.

Key Features

FeatureDesign Value
Two-word burst architectureReduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies address generation in FPGA-based controllers.
Source-synchronous echo clocks (CQ/CQ)Eliminates trace-length matching requirements between clock and data lines - enables reliable >1 GHz signaling across complex backplanes.
Programmable output impedance (ZQ)Allows dynamic tuning of DQ/CQ drive strength to match PCB trace impedance - improves signal fidelity without discrete termination resistors.
Configurable latency mode (DOFF)Hardware-selectable DDR II+ (2.5-cycle) or DDR I (1-cycle) operation - supports migration paths and mixed-speed system integration.
1.8 V core + 1.5 V I/O supply separationEnables independent power domain management - reduces switching noise coupling from I/O drivers into sensitive core logic.

Applications

High-Speed Packet BufferingTest Equipment Waveform Memory

Use Scenario: Storing and replaying multi-gigabit Ethernet or OTN frame payloads in network analyzers and traffic generators.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory buffer interfacing directly to FPGA fabric with source-synchronous DDR timing.

Use Value: 1266 MT/s throughput and QVLD-synchronized read data enable deterministic frame reconstruction without FIFO glue logic.

Use Scenario: Capturing and regenerating high-fidelity analog waveforms in automated test systems with sub-nanosecond timing resolution.

IC Role / Device Role / Timing Role: Deterministic-depth memory for waveform pattern generation, synchronized to instrument clock domains via CQ/CQ echo clocks.

Use Value: 2.5-cycle latency and echo-clock alignment ensure <±0.5 ns jitter in playback timing - critical for IEEE 1149.4 boundary-scan validation.

FPGA Co-Processor CacheReal-Time Signal Processing Buffer

Use Scenario: Offloading FFT, filtering, or beamforming computations from FPGA logic using tightly coupled external memory.

IC Role / Device Role / Timing Role: Low-latency, wide-bus scratchpad memory mapped into FPGA AXI or Avalon-MM address space.

Use Value: 2M × 36 organization matches common DSP word widths; burst reads minimize stall cycles during coefficient streaming.

Use Scenario: Holding radar pulse-Doppler processing windows or medical ultrasound beamformed data in embedded DSP subsystems.

IC Role / Device Role / Timing Role: Synchronous burst memory buffer aligned to real-time interrupt-driven acquisition pipelines.

Use Value: DOFF-configurable latency allows runtime trade-off between throughput (DDR II+) and determinism (DDR I) during adaptive processing modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C362000B-166BCN2M × 36, 166 MHz async SRAM; no DDR, no PLL, no echo clocks; 3.3 V onlyLacks source-synchronous timing - requires external FIFOs or wider bus multiplexing for equivalent bandwidthSelect only if system clock <166 MHz and deterministic latency is less critical than cost or simplicity.
IS61WV204836BLL-15BLI2M × 36, 15 ns async access; 3.3 V/2.5 V; no DDR, no burst, no JTAGNo burst or echo clock support - limits sustained bandwidth to ~67 MHz on 36-bit bus without pipeliningPrefer for non-real-time buffering where worst-case latency matters more than peak throughput.

Compared with AS7C362000B-166BCN and IS61WV204836BLL-15BLI, CY7C1570XV18-633BZXC delivers 7.6× higher effective bandwidth (1266 vs ≤166 MT/s) and eliminates board-level timing closure challenges via integrated echo clocks and QVLD - making it uniquely suited for deterministic high-speed packet and waveform memory.

Availability

CY7C1570XV18-633BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, test equipment waveform memory, and FPGA co-processor cache applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1570XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

The DDR II+ Xtreme SRAM product line targets applications needing deterministic low-latency, high-throughput memory interfaces - especially in networking infrastructure, automated test equipment, and real-time signal processing where source-synchronous timing eliminates system-level skew.

FAQ

What is the function of the DOFF pin on CY7C1570XV18-633BZXC?

The DOFF pin is an active-LOW PLL disable control. When pulled HIGH (typically via 10 kΩ pull-up), the internal PLL is enabled, supporting 2.5-cycle read latency and full 633 MHz DDR II+ operation. When tied LOW, the PLL is disabled and the device operates in DDR I mode with 1-cycle latency and reduced maximum frequency (≤167 MHz), providing backward compatibility with legacy timing controllers.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of DQ and CQ output driver impedance to 48 Ω (0.2 × RQ). This matches standard HSTL-15 transmission lines, minimizing reflections and improving signal integrity. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (~30 Ω); it must never be left floating or connected to GND.

Can CY7C1570XV18-633BZXC operate with only a single-ended clock?

No. The device requires true differential K and K clock inputs. Both signals must be driven with complementary CMOS or HSTL waveforms meeting specified voltage thresholds and skew limits. Using only K while leaving K unconnected violates AC timing specifications and will cause functional failure - the K input is not optional and is actively used for data capture and output timing.

What is the purpose of the QVLD signal in system design?

QVLD is an edge-aligned valid-data indicator that asserts HIGH precisely when DQ[35:0] contains stable, correctly timed read data - synchronized to the rising edges of CQ and CQ. It replaces the need for complex strobe-window detection logic in receiving FPGAs or ASICs, allowing direct use of QVLD as a latch-enable signal to capture clean data with minimal setup/hold margin.

CY7C1570XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
72Mbit
Memory Organization:
2M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1570XV18-633BZXC FAQ

1.How can I place an order for CY7C1570XV18-633BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1570XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1570XV18-633BZXC reliable?

The price and inventory of CY7C1570XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1570XV18-633BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1570XV18-633BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1570XV18-633BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1570XV18-633BZXC?

CY7C1570XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1570XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1570XV18-633BZXC?

For technical support, including CY7C1570XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1570XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C1570XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1570XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1570XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1570XV18-633BZXC?

All CY7C1570XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1570XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1570XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C1570XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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