Cypress Semiconductor Corp CY7C1613KV18-300BZI
- Part No.:
- CY7C1613KV18-300BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1613KV18-300BZI.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:209
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Product details
Overview
CY7C1613KV18 from Cypress Semiconductor is a 144-Mbit QDR® II SRAM with 8 M × 18 organization, 333 MHz clock support, 1.8 V core supply (±0.1 V), and 1.4–1.8 V I/O supply. It features separate read/write ports, four-word burst architecture, and DDR interfaces on both ports for 666 MHz effective data rate. Used in high-bandwidth networking buffers and packet forwarding engines.
For engineers reviewing the CY7C1613KV18 datasheet, CY7C1613KV18 pinout, CY7C1613KV18 application, or CY7C1613KV18 equivalent, key selection criteria include read latency (1.5-cycle with DOFF high), echo clock support (CQ/CQ), JTAG 1149.1 compliance, HSTL output drive, and FBGA-165 package compatibility with depth expansion via RPS/WPS.
Technical Context
The CY7C1613KV18 implements true quad data rate operation using independent K/K clocks for address/data capture and C/C clocks for output timing, enabling concurrent read and write transactions without bus turnaround. Its internal pipelined architecture latches addresses on alternating rising edges of K and supports synchronous self-timed writes.
It delivers full data coherency with 1.5-cycle read latency when DOFF = high, or 1-cycle latency when DOFF = low (QDR I mode). Echo clocks CQ and CQ are phase-aligned to C and C respectively, simplifying high-speed data capture in systems with flight-time skew.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (8 M × 18 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DOFF = high) or 1 cycle (DOFF = low) - determines pipeline depth in controller design |
| Core Supply Voltage | 1.8 V ± 0.1 V - requires tight-regulated LDO; not compatible with 2.5 V or 3.3 V cores |
| I/O Supply Range | 1.4 V to 1.8 V - supports 1.5 V or 1.8 V HSTL-18 signaling |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - RoHS-compliant, fine-pitch, thermal performance validated for 2.5 W max dissipation |
| Burst Length | Four 18-bit words per access - reduces address bus toggling frequency by 4× vs. single-word SRAM |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel input path for burst writes |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; tristated when RPS deasserted |
| RPS | Read port select (active low) | Enables read burst; controls Q[17:0] output enable and tri-state behavior |
| WPS | Write port select (active low) | Enables write burst; gates D[17:0] and BWS[1:0] sampling |
| BWS[1:0] | Byte write selects (active low) | BWS0 controls D[8:0], BWS1 controls D[17:9]; enables partial-word writes |
| K, K | Positive/negative input clocks | Edge-aligned clocks for address/data capture; K rising edge initiates all accesses |
| C, C | Positive/negative output clocks | Deskew-capable clocks for Q[17:0] timing; used with CQ/CQ for source-synchronous capture |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, phase-aligned copies of C/C; simplify FPGA/ASIC data capture at 666 MHz |
| ZQ | Output impedance calibration input | Connects to external resistor to ground to tune Q/CQ output impedance to 0.2 × RQ |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II); low = 1-cycle latency (QDR I backward compatibility) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Eliminates data bus turnaround and contention-enables deterministic full-duplex memory access |
| Four-word burst architecture | Reduces address bus frequency by 75% versus single-word access-lowers routing complexity and EMI |
| Integrated PLL and echo clocks (CQ/CQ) | Enables reliable source-synchronous data capture at 666 MHz without external delay lines or tuning |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for board-level interconnect verification and production test |
| Programmable output impedance (ZQ) | Allows dynamic matching to PCB trace impedance-improves signal integrity without external termination resistors |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in multi-gigabit line cards with strict latency budgets. IC Role / Device Role / Timing Role: Dual-port buffer providing simultaneous ingress frame write and egress frame read at 666 MT/s. Use Value: 1.5-cycle read latency and echo clocks ensure deterministic 3 ns setup/hold margins at 333 MHz clock domain. |
Use Scenario: Holding ATM cell headers and payload segments in OC-192/STM-64 transport equipment. IC Role / Device Role / Timing Role: High-throughput SRAM serving as shared memory between traffic manager and framer ASICs. Use Value: Independent RPS/WPS enables precise arbitration between upstream/downstream data paths without pipeline stalls. |
| Switch Fabric Lookup Table | Baseband Processor Cache |
|
Use Scenario: Accelerating MAC address and VLAN table lookups in Layer 2/L3 enterprise switches. IC Role / Device Role / Timing Role: Low-latency memory backing fast-path forwarding engines requiring sub-10 ns access. Use Value: Four-word burst delivers 72 bits/cycle-matches typical TCAM result width and avoids multiple cycles per lookup. |
Use Scenario: Acting as instruction/data cache for DSP-based LTE/5G baseband processors handling real-time FFT and channel estimation. IC Role / Device Role / Timing Role: Synchronous pipelined SRAM interfacing directly to dual-issue VLIW cores with HSTL-18 buses. Use Value: 1.8 V core + 1.5 V I/O allows direct integration with low-voltage SoC I/O domains while maintaining >10 Gbps aggregate bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L5 | 144-Mbit (4 M × 36), 250 MHz max, no echo clocks, LVDS I/O only | Requires external clock deskew; limited to 500 MT/s; incompatible with HSTL-18 systems | Select only if system uses LVDS signaling and operates ≤250 MHz; verify ZQ and DOFF functionality absent |
| ISSI IS61WV102418B | 18-Mbit (512 K × 36), 166 MHz, single-port, asynchronous interface | No concurrent read/write; no DDR/QDR; lacks CQ/CQ, JTAG, or burst capability | Only suitable for cost-sensitive, low-bandwidth buffering where latency and throughput are non-critical |
Compared with IDT72T3615L5 and IS61WV102418B, CY7C1613KV18 uniquely supports 333 MHz operation with echo clocks and HSTL-18 I/O, making it the only viable choice for new 10 GbE switch fabric designs requiring guaranteed 1.5-cycle latency and source-synchronous capture.
Availability
CY7C1613KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and switch fabric lookup tables requiring stable component supply across extended product lifecycles.
Supply support for CY7C1613KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1613KV18 belongs to Cypress's QDR® II SRAM product line, designed specifically for ultra-low-latency, high-bandwidth data buffering in packet-switched networking infrastructure and high-speed digital signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1613KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II operation with 1.5-cycle read latency; when low, it reverts to QDR I mode with 1-cycle latency. This pin is sampled synchronously on the rising edge of K and must be held stable during initialization. It does not affect write timing or burst length.
Can CY7C1613KV18 operate with only a single clock (K only)?
Yes - CY7C1613KV18 supports single-clock mode where K serves as both input and output clock. In this mode, C and C are unused, and CQ/CQ are generated relative to K. However, deskew capability is lost, and maximum frequency drops to 250 MHz due to timing margin constraints on shared clock paths.
How is output impedance calibrated using the ZQ pin?
ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and sets output driver impedance to 0.2 × RQ for Q[17:0], CQ, and CQ pins. If RQ = 240 Ω, outputs are calibrated to 48 Ω. Direct connection to VDDQ enables minimum impedance (~30 Ω); floating or grounding ZQ is prohibited and may damage the device.
Is JTAG boundary scan supported during normal operation?
Yes - the IEEE 1149.1 TAP remains fully functional during active memory operation. Test instructions (SAMPLE/PRELOAD, EXTEST, INTEST) can be executed without halting read/write transactions, provided TMS/TCK/TDI/TDO are isolated from functional logic during scan mode. The TAP controller operates independently of the memory core clock domain.
CY7C1613KV18-300BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1613KV18-300BZI FAQ
1.How can I place an order for CY7C1613KV18-300BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1613KV18-300BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1613KV18-300BZI reliable?
The price and inventory of CY7C1613KV18-300BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1613KV18-300BZI is usually 5 days.
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Once your CY7C1613KV18-300BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1613KV18-300BZI?
For technical support, including CY7C1613KV18-300BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1613KV18-300BZI requirements.
6.How does Aetrix verify that CY7C1613KV18-300BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1613KV18-300BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1613KV18-300BZI meets industry standards.
7.What is the process for return or replacement of CY7C1613KV18-300BZI?
All CY7C1613KV18-300BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1613KV18-300BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1613KV18-300BZI part is unused and in its original packaging.
Return procedure for CY7C1613KV18-300BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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