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Cypress Semiconductor Corp CY7C1613KV18-333BZXC

Part No.:
CY7C1613KV18-333BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1613KV18-333BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:103

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Product details

Overview

CY7C1613KV18-333BZXC from Cypress Semiconductor is a 144-Mbit QDR® II SRAM with 8 M × 18 organization, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, four-word burst architecture, and DDR interfaces on both ports enabling 666 MT/s data transfer. Used in high-bandwidth networking buffers and packet forwarding engines where deterministic latency and concurrent access are critical.

For engineers reviewing the CY7C1613KV18-333BZXC datasheet, CY7C1613KV18-333BZXC pinout, CY7C1613KV18-333BZXC application, or CY7C1613KV18-333BZXC equivalent, this page delivers verified timing parameters, FBGA-165 package mapping, echo clock implementation guidance, and depth-expansion port select logic for system-level integration.

Technical Context

The device implements true dual-port QDR II architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling precise DDR timing without bus turnaround. Its 1.5-cycle read latency (DOFF = high) or 1-cycle latency (DOFF = low) is managed via synchronous internal pipelining and PLL-controlled data placement.

All inputs are registered on rising edges of K/K; outputs are edge-aligned to C/C with echo clocks CQ/CQ referenced to those outputs. Byte write selects BWS[1:0] control D[8:0] and D[17:9] independently, supporting partial writes without read-modify-write cycles.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8 M × 18 configuration)
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port
Read Latency 1.5 cycles (DOFF = high) or 1 cycle (DOFF = low) - selectable real-time latency mode
Core Supply Voltage 1.8 V ±0.1 V - defines minimum power delivery stability requirement
I/O Supply Range 1.4 V to 1.8 V - supports HSTL-15/18-compatible signaling
Burst Length Four 18-bit words per access - reduces address bus toggling by 75% vs. single-word
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count memory stacking

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm, RoHS-compliant, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; full 18-bit parallel write path
Q[17:0] Synchronous read data outputs Driven on rising edges of C/C; tristated when RPS deasserted
K, K Positive/negative input clocks Capture all synchronous inputs (address, data, controls); rising-edge triggered only
C, C Positive/negative output clocks Launch Q[17:0]; used with CQ/CQ for flight-time deskew in multi-device systems
CQ, CQ Echo clocks Free-running, phase-aligned copies of C/C; simplify high-speed data capture at controller
RPS, WPS Read/write port selects Active-low enables; allow independent port activation for depth expansion
BWS[1:0] Byte write selects Control D[8:0] and D[17:9] separately; enable partial-word writes without corruption
DOFF Read latency mode select High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility)
ZQ Output impedance calibration Connects to external resistor to ground to tune Q/CQ drive strength to 0.2 × RQ

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead and prevents data contention in full-duplex systems
Four-word burst architecture Reduces effective address bus frequency by 4×, easing PCB routing and timing closure
Programmable read latency (1 or 1.5 cycles) Enables drop-in compatibility with legacy QDR I designs while supporting higher bandwidth modes
HSTL-15/18-compatible I/O Supports 1.4 V or 1.8 V VDDQ - simplifies interface to FPGAs and ASICs with mixed I/O standards
JTAG 1149.1 test access port Enables boundary scan testing and in-system programming without additional debug hardware

Applications

Network Packet Buffer Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches.

IC Role / Device Role / Timing Role: Dual-port SRAM providing simultaneous header read (for lookup) and write (for enqueue) with zero bus contention.

Use Value: 333 MHz clock + four-word burst delivers 4.8 GB/s aggregate bandwidth, meeting line-rate 100 GbE switching requirements.

Use Scenario: Interconnecting crossbar switch stages in modular chassis-based routers.

IC Role / Device Role / Timing Role: High-speed buffer between scheduler and egress queues, synchronized to C/C clocks for deterministic latency.

Use Value: Echo clocks CQ/CQ align data capture at FPGA receiver, reducing setup/hold margin by up to 120 ps versus non-echoed clocks.

Telecom Baseband Processing Test Equipment Pattern Memory

Use Scenario: Holding channel estimation coefficients and FFT output buffers in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Low-latency memory for real-time signal processing pipelines requiring concurrent read/write access.

Use Value: DOFF-selectable latency allows tuning to algorithm pipeline depth-1-cycle for tight loops, 1.5-cycle for wider datapaths.

Use Scenario: Storing stimulus/response patterns in high-speed ATE systems operating at >500 MHz test rates.

IC Role / Device Role / Timing Role: Deterministic-access memory with JTAG boundary scan for production testability and traceability.

Use Value: ZQ-calibrated HSTL outputs ensure signal integrity across 20+ inch backplane traces at 666 MT/s.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L5 144-Mbit, 36-bit × 4M, 333 MHz, 1.8 V core, but uses differential LVDS I/O (not HSTL) Requires LVDS termination and level-shifting circuitry; incompatible with HSTL-only controllers Select only if system already implements LVDS infrastructure and needs identical density/burst behavior
ISSI IS61WV102418B 18-Mbit, 1M × 18, 200 MHz max, asynchronous interface, no echo clocks or DOFF latency control Lacks QDR II features: no concurrent access, no DDR, no burst, no programmable latency Only suitable for cost-sensitive, low-bandwidth buffering where QDR II advantages are unnecessary

Compared with IDT72T3615L5 and IS61WV102418B, CY7C1613KV18-333BZXC uniquely combines HSTL compatibility, echo-clock–assisted timing closure, and runtime-selectable latency-making it optimal for FPGA-based networking platforms requiring pin- and timing-compatible upgrades from QDR I.

Availability

CY7C1613KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY7C1613KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1613KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-throughput, low-latency data buffering in packet-switched networks and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1613KV18-333BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when tied high, the device operates in QDR II mode with 1.5-cycle read latency; when tied low or to VSS, it reverts to QDR I mode with 1-cycle latency. This pin directly controls internal pipeline staging and does not affect write timing or burst length.

Can CY7C1613KV18-333BZXC operate with only a single clock domain?

Yes. When K and C are driven by the same source (and K and C grounded or unused), the device enters single-clock mode. In this mode, data is latched on K and launched on C, with CQ generated relative to K. All timing parameters shift accordingly, and echo clock deskew capability is lost.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) to ground; the device measures RQ and configures its Q[17:0], CQ, and CQ output drivers to 0.2 × RQ. If RQ = 240 Ω, outputs are tuned to 48 Ω. Connecting ZQ directly to VDDQ enables minimum-impedance mode (~24 Ω), but grounding or leaving it floating is prohibited.

What is the role of BWS[1:0] during a write operation?

BWS0 controls write enable for D[8:0]; BWS1 controls D[17:9]. Both are sampled on the same K/K edge as data. When BWS0 is high, D[8:0] is ignored and unchanged; when low, those bits are written. This enables byte-granular updates without read-modify-write sequences, preserving data coherency.

CY7C1613KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1613KV18-333BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1613KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1613KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1613KV18-333BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C1613KV18-333BZXC?

For technical support, including CY7C1613KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1613KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1613KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1613KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1613KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1613KV18-333BZXC?

All CY7C1613KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1613KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1613KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1613KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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