Cypress Semiconductor Corp CY7C1614KV18-333BZC

Overview

CY7C1614KV18-333BZC from Infineon Technologies (formerly Cypress) is a 4M × 36, 144-Mbit QDR® II synchronous SRAM with two-word burst architecture, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 720 Mbps DDR data transfer on both read and write ports and supports concurrent read/write operations in high-bandwidth networking buffers and packet memory applications.

For engineers reviewing the CY7C1614KV18-333BZC datasheet, CY7C1614KV18-333BZC pinout, CY7C1614KV18-333BZC application, or CY7C1614KV18-333BZC equivalent, key selection criteria include its 21-bit address bus, 36-bit bidirectional data interface, echo clock (CQ/CQ) support for timing margin recovery, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, and JTAG 1149.1 test access port compliance.

Technical Context

The device implements a true dual-port QDR II architecture with physically separate read and write data paths-no bus turnaround required-enabling simultaneous 36-bit reads and writes at 333 MHz. Its internal pipelined structure uses rising-edge-triggered K/K clocks for address/data latching and C/C clocks for output synchronization, with echo clocks (CQ/CQ) aligned to output data edges.

It integrates a PLL for precise data placement, supports byte-write masking via four BWS inputs (BWS0–BWS3), and provides full data coherency through synchronous self-timed writes. The 2M × 36 memory array is accessed via a shared 21-bit multiplexed address bus, with RPS/WPS enabling independent port control for depth expansion.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with CY7C1612KV18-333BZC, this part offers higher burst efficiency per clock cycle (36-bit vs. 18-bit), reducing controller complexity in wide-data-path systems; versus AS7C331024A-333BIN, it delivers guaranteed concurrent access and timing margin recovery - essential for deterministic 10G+ packet processing.

Availability

CY7C1614KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffers, switch fabric memory, telecom line card buffers, and protocol accelerator caches requiring stable component supply across multi-year production cycles.

Supply support for CY7C1614KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR II SRAM portfolio originally developed by Cypress.

This device belongs to Infineon's high-speed memory product line, designed specifically for deterministic, low-latency, concurrent-access applications in networking, telecommunications, and high-performance computing infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1614KV18-333BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables 1.5-cycle latency for optimized bandwidth in burst-heavy applications; when low, it selects 1-cycle latency for minimal read-to-data-valid delay. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

Can CY7C1614KV18-333BZC operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating the need for separate read/write clocks. In this mode, data is latched and driven on the same clock edges, simplifying board layout at the cost of reduced timing margin versus dual-clock operation with echo clocks.

How does the BWS[3:0] functionality work for partial writes?

BWS[3:0] are active-low byte write enables that mask corresponding 8-bit segments of the 36-bit D[35:0] bus: BWS0 controls D[7:0], BWS1 controls D[15:8], BWS2 controls D[23:16], and BWS3 controls D[31:24]. D[35:32] are unmasked and always written. Deasserting any BWS prevents that byte from being updated, preserving prior content.

Is the 165-ball FBGA package of CY7C1614KV18-333BZC compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤260°C). Its 0.8 mm ball pitch and 15 × 17 mm footprint align with industry-standard HDI PCB stackups used in telecom and networking equipment.