Cypress Semiconductor Corp CY7C1615KV18-250BZXC

Overview

CY7C1615KV18-250BZXC from Cypress Semiconductor is a 4 M × 36, 144-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers quad-data-rate burst transfers (four 36-bit words per access) with 1.5-cycle read latency when DOFF = high, and supports concurrent read/write transactions in high-bandwidth networking buffers.

For engineers reviewing the CY7C1615KV18-250BZXC datasheet, CY7C1615KV18-250BZXC pinout, CY7C1615KV18-250BZXC application, or CY7C1615KV18-250BZXC equivalent, key selection criteria include its 165-ball FBGA package, echo-clock–assisted DDR timing (C/C, CQ/CQ), JTAG 1149.1 test support, and depth expansion via RPS/WPS port selects.

Technical Context

The CY7C1615KV18 implements true dual-port QDR II architecture: independent read and write data paths eliminate bus turnaround, enabling simultaneous 36-bit reads and writes on every K/K rising edge. Its internal 4 × 1 M × 36 array organization uses multiplexed 20-bit address bus latched on alternating K edges.

Timing is governed by four synchronized clocks: K/K for input capture and write control, C/C for output data strobing, and CQ/CQ echo clocks aligned to C/C for receiver deskew. A built-in PLL ensures precise data placement, while DOFF pin configures read latency between 1-cycle (QDR I mode) and 1.5-cycle (QDR II mode).

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36150L10BG and IS61WV102436BLL-150BLI, CY7C1615KV18-250BZXC uniquely delivers 250 MHz QDR II operation with echo-clock timing support and programmable 1/1.5-cycle latency-critical for 10G+ packet buffering where bandwidth and deterministic capture timing are non-negotiable.

Availability

CY7C1615KV18-250BZXC is available at Aetrix Electronics and suitable for 10G Ethernet switch buffers, telecom baseband line cards, depth-expanded memory subsystems, and protocol-agnostic interposer buffers requiring stable component supply and long-lifecycle support.

Supply support for CY7C1615KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1615KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for high-speed packet processing and baseband data buffering where concurrent read/write bandwidth and deterministic latency are essential.

FAQ

What is the function of the DOFF pin on CY7C1615KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when tied high, it enables 1.5-cycle latency for optimized QDR II performance; when tied low or to VSS, it reverts to 1-cycle latency compatible with QDR I timing. This pin does not affect write timing or burst length-it solely adjusts the read data launch point relative to C/C edges.

Can CY7C1615KV18-250BZXC operate with only a single clock domain?

Yes. When K is used as both input and output clock (i.e., C = K, C = K), the device operates in single-clock mode. In this configuration, Q[35:0] data is driven on K/K rising edges, and CQ/CQ echo clocks are generated relative to K/K. All timing parameters shift accordingly, and read latency remains configurable via DOFF.

How is output impedance calibrated using the ZQ pin?

ZQ must be connected to a precision resistor (RQ) tied to ground; the device measures RQ and scales all Q[35:0] and CQ/CQ output drivers to 0.2 × RQ. Typical RQ = 240 Ω yields 48 Ω nominal output impedance. Connecting ZQ directly to VDDQ forces minimum impedance (~30 Ω); floating or grounding ZQ is prohibited and may cause undefined behavior.

Does CY7C1615KV18-250BZXC support byte-write masking across the full 36-bit width?

Yes. Four active-low byte write select inputs (BWS[3:0]) each control a 9-bit segment of D[35:0]: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Any deselected BWS leaves its corresponding 9-bit byte unchanged during the write cycle, enabling partial-word updates without read-modify-write sequences.