Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1615KV18-300BZXI

Part No.:
CY7C1615KV18-300BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1615KV18-300BZXI.pdf
Description:
QDR SRAM, 4MX36, 0.45NS, CMOS, P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:196

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1615KV18-300BZXI from Cypress Semiconductor is a 4 M × 36, 144-Mbit QDR® II SRAM with separate read/write ports, 300 MHz clock operation (600 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst transfers and supports depth expansion via RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1615KV18-300BZXI datasheet, CY7C1615KV18-300BZXI pinout, CY7C1615KV18-300BZXI application, or CY7C1615KV18-300BZXI equivalent, key selection criteria include its dual-clock DDR timing architecture, echo clock (CQ/CQ) support for high-speed data capture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with HSTL-18 interfaces.

Technical Context

The device implements true quad data rate (QDR® II) architecture with physically independent read and write ports-each with dedicated DDR I/O, separate address latching on K/K edges, and synchronous self-timed writes. It uses two input clocks (K/K) for address/data capture and two output clocks (C/C) plus echo clocks (CQ/CQ) to minimize skew across high-speed memory buses.

Internal organization comprises four 1 M × 36 arrays; address bus is multiplexed (A[19:0]), and byte write select (BWS[3:0]) enables granular 9-bit write masking. The PLL ensures precise data placement, while ZQ pin calibrates output impedance to match system trace impedance (0.2 × RQ).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (4 M × 36 configuration)
Max Clock Frequency 300 MHz - determines maximum sustained bandwidth of 8.64 GB/s (300 MHz × 36-bit × 2 transfers/cycle)
Read Latency 1 cycle (DOFF = low) or 1.5 cycles (DOFF = high) - directly impacts pipeline depth and controller timing margin
Core Supply Voltage 1.8 V ±0.1 V - requires tight-regulated low-noise LDO; not compatible with 1.5 V core rails
I/O Supply Range 1.4 V to 1.8 V - supports HSTL-18 logic levels and interoperability with 1.5 V or 1.8 V controllers
Package 165-ball FBGA (15 × 17 × 1.4 mm) - standard footprint for high-pin-count QDR SRAMs; RoHS-compliant Pb-free option
Interface Standard HSTL Class I - defines drive strength, termination, and signal integrity requirements for reliable >600 Mbps signaling

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edges of K/K; full 36-bit parallel write path with BWS[3:0] byte enable control
Q[35:0] Synchronous read data outputs Driven on rising edges of C/C; tristated when RPS is deasserted; supports echo-clock–based capture
RPS / WPS Active-low port select controls Independent gating of read/write ports; enables depth expansion without external logic or bus arbitration
C / C, K / K Differential clock inputs K/K sample addresses and write data; C/C clock read data; all use rising-edge timing only
CQ / CQ Free-running echo clocks Synchronized to C/C; used by controller to deskew data capture timing across multiple devices on same bus
ZQ Output impedance calibration reference Connect to resistor-to-ground (RQ) to set Q/CQ output impedance to 0.2 × RQ; critical for signal integrity at 600 Mbps
DOFF Read latency mode control High = QDR II mode (1.5-cycle latency); low = QDR I mode (1-cycle latency); sets internal pipeline behavior

Key Features

Feature Design Value
Separate read/write ports Eliminates bus turnaround overhead and prevents data contention in full-duplex memory systems
Four-word burst transfer Reduces effective address bus frequency by 4× versus single-word access - lowers routing complexity and timing closure burden
Programmable read latency (DOFF) Enables runtime optimization: 1-cycle latency for minimal latency paths; 1.5-cycle for improved setup/hold margin in marginal layouts
JTAG 1149.1 boundary scan Supports IEEE-compliant test access for production board-level validation and interconnect diagnostics
Variable-drive HSTL outputs Configurable drive strength via ZQ calibration - adapts to varying PCB trace lengths and loads without redesign

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit line cards with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency buffer between ingress parser and egress scheduler; operates in QDR I mode (DOFF = low) for deterministic 1-cycle read response.

Use Value: Concurrent read/write allows packet dequeue while new packet enqueue proceeds - sustains full 10 Gbps+ line rate without stalls.

Use Scenario: Frame buffering in 40G/100G OTN switch fabric interface modules requiring burst-aligned data handling.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as elastic store between asynchronous SerDes lanes and synchronous switch ASIC; uses CQ/CQ for source-synchronous capture.

Use Value: Echo clocks eliminate flight-time mismatch across 36-bit wide bus - maintains valid data window at 600 Mbps per pin.

Baseband Processing Cache Test Equipment Pattern Memory

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced to FPGA-based DSP engine; configured with 1.5-cycle latency (DOFF = high) to relax timing closure on long traces.

Use Value: Separate RPS/WPS enables independent scheduling of coefficient reads and result writes - avoids pipeline bubbles in pipelined FFT engines.

Use Scenario: High-fidelity waveform generation and capture in automated test equipment (ATE) with real-time pattern matching.

IC Role / Device Role / Timing Role: Deterministic-access memory storing stimulus/response vectors; uses JTAG boundary scan for post-manufacture interconnect verification.

Use Value: Full data coherency guarantees most recent written data is always returned on read - essential for pass/fail decision accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1615KV18-250BZXI 250 MHz max clock (vs. 300 MHz); lower power consumption (830 mA max vs. 950 mA) Lower bandwidth requirement (7.2 GB/s vs. 8.64 GB/s); suitable where thermal budget or cost outweighs peak throughput Select when system clock domain is ≤250 MHz and power dissipation must be minimized.
AS7C362000B-300BIN Same 4 M × 36 density and 300 MHz rating but uses SSTL-2 I/O (2.5 V) instead of HSTL-18; no echo clocks or DOFF latency control Requires 2.5 V I/O rail and external deskew circuitry; lacks QDR II–specific features like CQ/CQ and programmable latency Select only if legacy 2.5 V infrastructure exists and echo clock simplification is unnecessary.

Compared with CY7C1615KV18-250BZXI and AS7C362000B-300BIN, the CY7C1615KV18-300BZXI uniquely combines 300 MHz operation, HSTL-18 compatibility, echo clock support, and DOFF-configurable latency - making it optimal for new high-speed designs demanding both bandwidth and timing flexibility.

Availability

CY7C1615KV18-300BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1615KV18-300BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1615KV18 belongs to Cypress's QDR® II SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking switches, routers, and baseband processors where concurrent read/write and deterministic timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1615KV18-300BZXI?

The DOFF (Data Output OFFset) pin configures read latency mode: when tied high, the device operates in QDR II mode with 1.5-cycle read latency; when tied low or to VSS, it reverts to QDR I mode with 1-cycle latency. This setting affects internal pipeline staging and must be fixed at power-up - it is not dynamically switchable during operation.

Can CY7C1615KV18-300BZXI operate with only a single clock input?

Yes - the device supports single-clock mode where K serves as both input and output clock (C = K, C = K). In this mode, echo clocks CQ/CQ are generated relative to K/K, and data is sampled/driven on K/K edges. However, dual-clock mode (separate K/K and C/C) is required to achieve full timing margin and deskew capability using CQ/CQ.

What is the purpose of the ZQ pin, and how should it be terminated?

ZQ is an output impedance calibration reference. It must be connected to a precision resistor (RQ) to ground - typical value is 240 Ω - to set Q and CQ output impedance to 0.2 × RQ (e.g., 48 Ω). Direct connection to VDDQ enables minimum impedance mode (~25 Ω); connection to GND or leaving it floating violates specification and risks signal integrity failure.

How does depth expansion work with RPS and WPS signals?

RPS (Read Port Select) and WPS (Write Port Select) are active-low, synchronous controls that gate read and write operations independently. To expand memory depth, multiple CY7C1615KV18 devices share the same address and data buses while using unique RPS/WPS lines - enabling one device to read while another writes, or stacking devices for wider addressing without external multiplexers.

CY7C1615KV18-300BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
144Mbit
Memory Organization:
4M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1615KV18-300BZXI FAQ

1.How can I place an order for CY7C1615KV18-300BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1615KV18-300BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1615KV18-300BZXI reliable?

The price and inventory of CY7C1615KV18-300BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1615KV18-300BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1615KV18-300BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1615KV18-300BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1615KV18-300BZXI?

CY7C1615KV18-300BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1615KV18-300BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1615KV18-300BZXI?

For technical support, including CY7C1615KV18-300BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1615KV18-300BZXI requirements.

6.How does Aetrix verify that CY7C1615KV18-300BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1615KV18-300BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1615KV18-300BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1615KV18-300BZXI?

All CY7C1615KV18-300BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1615KV18-300BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1615KV18-300BZXI part is unused and in its original packaging.

Return procedure for CY7C1615KV18-300BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1615KV18-300BZXI Tags

  • CY7C1615KV18-300BZXI
  • CY7C1615KV18-300BZXI PDF
  • CY7C1615KV18-300BZXI Datasheet
  • CY7C1615KV18-300BZXI Specifications
  • CY7C1615KV18-300BZXI Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1615KV18-300BZXI
  • Buy CY7C1615KV18-300BZXI
  • CY7C1615KV18-300BZXI Price
  • CY7C1615KV18-300BZXI Distributor
  • CY7C1615KV18-300BZXI Supplier
  • CY7C1615KV18-300BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER