Cypress Semiconductor Corp CY7C1615KV18-333BZXC

Overview

CY7C1615KV18-333BZXC from Cypress Semiconductor is a 4 M × 36, 144-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock operation (666 MT/s DDR), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions with four-word burst, echo clocks (CQ/CQ), and JTAG 1149.1 test access for high-speed networking buffer applications.

For engineers reviewing the CY7C1615KV18-333BZXC datasheet, CY7C1615KV18-333BZXC pinout, CY7C1615KV18-333BZXC application, or CY7C1615KV18-333BZXC equivalent, key selection criteria include QDR II architecture support, 165-ball FBGA (15 × 17 mm) package compatibility, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and HSTL-18 output drive compliance.

Technical Context

The CY7C1615KV18 implements true dual-port synchronous pipelined SRAM architecture with physically independent read and write data paths-no bus turnaround required. Its 20-bit address bus accesses a 4 M × 36 memory array organized as four 1 M × 36 sub-arrays, latched on alternating rising edges of K/K clocks.

It uses two differential input clock pairs: K/K for address/control/data capture and C/C for output timing, with free-running echo clocks CQ/CQ synchronized to C/C for source-synchronous data capture. The integrated PLL ensures precise data placement, and DOFF pin selects between QDR I (1-cycle latency) and QDR II (1.5-cycle latency) modes.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T36150L5 and IS61WV102436B, CY7C1615KV18-333BZXC uniquely combines HSTL-18 compatibility, programmable ZQ impedance, DOFF-configurable latency, and JTAG testability-making it the only option supporting full QDR II feature set at 333 MHz in standard 1.8 V systems.

Availability

CY7C1615KV18-333BZXC is available at Aetrix Electronics and suitable for Layer 2/Layer 3 switch buffers, telecom line card memory, and network processor interfaces requiring stable component supply across extended product lifecycles.

Supply support for CY7C1615KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for high-bandwidth, low-latency buffering in packet-switched infrastructure-targeting routers, switches, and baseband units where deterministic timing and concurrent access are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1615KV18-333BZXC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II operation with 1.5-cycle read latency; when low, it reverts to QDR I mode with 1-cycle latency. This is a static configuration pin-its state must be stable before initialization and cannot be changed dynamically during operation without resetting the device.

Can CY7C1615KV18-333BZXC operate with only a single clock domain?

Yes. When C and C are tied together and driven by the same source as K and K, the device operates in single-clock mode. In this configuration, Q[35:0] data is clocked out on K/K edges instead of C/C, and CQ/CQ are generated relative to K/K. All timing parameters shift accordingly, and maximum frequency may be reduced due to combined clock path skew.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external resistor (typically 240 Ω) to ground, calibrating internal output drivers to match 50 Ω transmission lines. This reduces signal reflections and improves eye diagram margins at 666 MT/s. Leaving ZQ unconnected or tying it to VSS causes undefined output impedance and violates AC timing specs-always terminate ZQ per datasheet Figure 27.

Is JTAG boundary scan supported during normal memory operation?

Yes. The IEEE 1149.1 TAP remains fully functional while the SRAM executes read/write operations. Boundary scan instructions (SAMPLE/PRELOAD, EXTEST, INTEST) can be executed without halting memory access, enabling live interconnect testing in powered systems-critical for field-upgradable telecom hardware validation.