Cypress Semiconductor Corp CY7C1620KV18-333BZXI
- Part No.:
- CY7C1620KV18-333BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1620KV18-333BZXI.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,969
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1620KV18-333BZXI from Infineon Technologies (formerly Cypress) is a 144-Mbit DDR II synchronous SRAM configured as 4M × 36, operating at 333 MHz with double-data-rate I/O delivering 666 MT/s bandwidth. It features dual input clocks (K/K), echo clocks (CQ/CQ), programmable output impedance via ZQ, and supports 1.5-cycle read latency (DOFF = high) or 1-cycle latency (DOFF = low). It is used in high-speed networking line cards and packet buffering subsystems requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1620KV18-333BZXI datasheet, CY7C1620KV18-333BZXI pinout, CY7C1620KV18-333BZXI application, or CY7C1620KV18-333BZXI equivalent, key selection criteria include DDR II burst timing compliance, HSTL-18 I/O compatibility, FBGA-165 package integration, and JTAG 1149.1 testability for production validation.
Technical Context
The device implements a synchronous pipelined architecture with two-word burst addressing, where A0 drives an internal 1-bit counter to generate sequential 36-bit word addresses. All address, control, and data inputs are registered on rising edges of K and K clocks, enabling precise setup/hold timing at 333 MHz.
Read data is driven synchronously on C and C clock edges (or K/K in single-clock mode), with echo clocks CQ/CQ phase-aligned to output data for simplified capture at the controller. The integrated PLL ensures accurate data placement, while ZQ calibration adjusts output driver impedance to match system trace impedance (typically 50 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 144 Mbit (4M × 36 organization) |
| Max Clock Frequency | 333 MHz - defines maximum sustained transaction rate and system timing budget |
| Data Rate | 666 MT/s - achieved via DDR interface transferring data on both rising edges of C/C |
| Read Latency | 1.5 cycles (DOFF = high) or 1 cycle (DOFF = low) - directly impacts pipeline depth and controller wait-state logic |
| I/O Voltage | 1.8 V core / 1.4–1.8 V I/O - supports mixed-voltage board design with HSTL-18 compatible signaling |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - enables high-density routing and thermal performance suitable for telecom modules |
| Standby Current | Typical 45 mA at 333 MHz - determines power budget for always-on buffer applications |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit wide DDR I/O; sampled on K/K for writes, driven on C/C for reads; tristated when deselected |
| K, K | Primary input clocks | Rising edges latch all synchronous inputs (address, R/W, BWS); define burst initiation and write timing |
| C, C | Output data clocks | Control timing of Q[35:0] output edges; used with CQ/CQ to deskew flight time across multiple devices |
| CQ, CQ | Echo clocks | Free-running outputs synchronized to C/C; enable source-synchronous data capture without per-pin delay tuning |
| DOFF | Read latency mode select | High = 1.5-cycle latency (DDR II mode); low = 1-cycle latency (DDR I compatibility mode) |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground; sets output driver impedance to 0.2 × RQ ≈ 48 Ω |
| BWS[3:0] | Byte write select | Four active-low signals controlling 9-bit byte lanes (D[8:0], D[17:9], D[26:18], D[35:27]) independently |
| LD | Load strobe | Active-low signal defining start of bus cycle; latches address and R/W state on next K/K edge |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst addressing | Reduces external address bus toggling by 50% versus single-word access, lowering EMI and controller overhead |
| Programmable output drive strength | ZQ-calibrated HSTL drivers ensure consistent signal integrity across voltage/temperature variations |
| Integrated PLL | Enables precise data-eye centering at 666 MT/s, eliminating need for external timing ICs in high-speed designs |
| JTAG 1149.1 support | Enables boundary scan testing of interconnects and in-system programming of configuration registers |
| Single/dual clock domain operation | Supports migration from legacy DDR I systems (K/K only) to optimized DDR II (C/C + CQ/CQ) without hardware redesign |
Applications
| Telecom Line Card Buffering | Network Packet Switching |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASIC interfaces. IC Role / Device Role / Timing Role: Low-latency, burst-access SRAM acting as first-level packet descriptor cache with deterministic 1.5-cycle read response. Use Value: Enables zero-drop forwarding under full line-rate traffic by providing sub-3 ns access to critical control structures. |
Use Scenario: Buffering variable-length packets in multi-port Layer 2/L3 switching fabric controllers. IC Role / Device Role / Timing Role: Synchronous DDR II SRAM serving as shared memory pool with concurrent read/write ports via burst interleaving. Use Value: Delivers 666 MT/s throughput matching SerDes lane rates, eliminating bottlenecks between MAC and switch fabric. |
| Baseband Processing Memory | Industrial Real-Time Control |
|
Use Scenario: Holding FFT coefficients and channel estimation data in LTE/5G remote radio head baseband units. IC Role / Device Role / Timing Role: High-reliability SRAM with neutron soft-error immunity used for real-time DSP parameter storage. Use Value: Maintains data integrity under radiation exposure while supporting burst transfers aligned to OFDM symbol boundaries. |
Use Scenario: Storing motion profile tables and encoder feedback history in servo drive digital signal processors. IC Role / Device Role / Timing Role: Deterministic-latency memory interfaced to FPGA-based motion controllers requiring jitter-free access. Use Value: Guarantees ≤1.5-cycle read latency across temperature (-40°C to +85°C), ensuring closed-loop timing compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JCIN | Asynchronous 256K × 16 SRAM; no DDR, no burst, no echo clocks; 15 ns access | Used in legacy control-plane buffers where timing determinism > bandwidth | Select only if system lacks DDR clock infrastructure and tolerates higher latency |
| IS61WV102418BLL-10BLI | Synchronous 1M × 18 SRAM; single-data-rate; 10 ns access; no ZQ or echo clocks | Deployed in cost-sensitive industrial PLCs with moderate throughput requirements | Choose when DDR complexity is unnecessary and 100+ MHz clocking suffices |
Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10BLI, CY7C1620KV18-333BZXI uniquely delivers DDR II timing, echo-clock–assisted capture, and ZQ impedance tuning-enabling reliable 666 MT/s operation in systems where signal integrity and deterministic latency are non-negotiable.
Availability
CY7C1620KV18-333BZXI is available at Aetrix Electronics and suitable for telecom line card buffering, network packet switching, and baseband processing applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1620KV18-333BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and communications markets.
This device belongs to Infineon's high-performance DDR II SRAM product line, designed specifically for deterministic, low-jitter memory buffering in high-speed serial data infrastructure where timing predictability outweighs density-per-dollar metrics.
FAQ
What is the function of the DOFF pin on CY7C1620KV18-333BZXI?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted high, it enables DDR II operation with 1.5-cycle latency; when low, it reverts to DDR I–compatible 1-cycle latency. This allows backward compatibility with legacy controllers while supporting newer high-performance designs that benefit from tighter burst alignment.
Can CY7C1620KV18-333BZXI operate without external C and C clocks?
Yes - the device supports single-clock mode using only K and K for both input registration and output timing. In this mode, CQ and CQ are generated relative to K/K instead of C/C, and data is driven on K/K edges. However, echo-clock–assisted capture and optimal deskewing require C/C inputs.
How does ZQ calibration affect signal integrity in high-speed layouts?
ZQ calibration dynamically adjusts the output driver impedance of DQ[35:0], CQ, and CQ to match the system's characteristic trace impedance (typically 50 Ω). This minimizes reflections and improves eye diagram margins, especially critical for maintaining clean 666 MT/s transitions across FR4 PCBs with length-matched routes.
Is CY7C1620KV18-333BZXI pin-compatible with CY7C1618KV18-333BZXI?
No - although both share the same 165-ball FBGA package and many signal names, CY7C1620KV18 uses DQ[35:0] and BWS[3:0], while CY7C1618 uses DQ[17:0] and BWS[1:0]. Pin assignments differ significantly in the data and byte-select regions; direct replacement requires PCB redesign and firmware adaptation.
CY7C1620KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1620KV18-333BZXI FAQ
1.How can I place an order for CY7C1620KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1620KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1620KV18-333BZXI reliable?
The price and inventory of CY7C1620KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1620KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1620KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1620KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1620KV18-333BZXI?
CY7C1620KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1620KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1620KV18-333BZXI?
For technical support, including CY7C1620KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1620KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C1620KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1620KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1620KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1620KV18-333BZXI?
All CY7C1620KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1620KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1620KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C1620KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1620KV18-333BZXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

