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Cypress Semiconductor Corp CY7C1623KV18-333BZXC

Part No.:
CY7C1623KV18-333BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1623KV18-333BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:316

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Product details

Overview

CY7C1623KV18-333BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit (8 M × 18) DDR-II Synchronous Pipelined SRAM with Separate I/O architecture, operating at 333 MHz clock frequency and delivering 666 MHz effective data rate. It features dual input clocks (K/K), echo clocks (CQ/CQ), programmable impedance via ZQ, and supports both DDR-I (1-cycle read latency, DOFF = LOW) and DDR-II (1.5-cycle read latency, DOFF = HIGH) modes. Used in high-bandwidth networking line cards and packet buffering subsystems requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1623KV18-333BZXC datasheet, CY7C1623KV18-333BZXC pinout, CY7C1623KV18-333BZXC application, or CY7C1623KV18-333BZXC equivalent, key selection criteria include DDR-II SIO timing compliance, HSTL-18 I/O compatibility, 165-ball FBGA mechanical fit, PLL-enabled data placement accuracy, and burst-2 address-to-data timing alignment across multi-device stacks.

Technical Context

The device implements a two-port DDR-II SIO architecture: dedicated read port (Q[17:0], C/C, CQ/CQ) and write port (D[17:0], K/K), eliminating bus turnaround overhead. All synchronous inputs are registered on rising edges of K/K, while outputs are edge-aligned to C/C (or K/K in single-clock mode), enabling precise skew management in parallel memory systems.

Its internal PLL synchronizes output data placement to echo clocks, supporting stable 333 MHz operation with 1.5-cycle read latency when DOFF = HIGH. The ZQ pin enables dynamic output impedance calibration against system trace impedance (via external RQ resistor), ensuring signal integrity for 666 MHz DDR data transfers.

Key Specifications

ParameterValue and Actual Design Meaning
Density144 Mbit (8 M × 18), enabling 2-word burst per access without address re-latching
Max Clock Frequency333 MHz - defines maximum sustained command rate and system bandwidth ceiling
Data Rate666 MHz DDR - doubles throughput versus single-data-rate at same clock frequency
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - determines minimum pipeline depth for controller design
I/O VoltageHSTL Class I (1.4 V–1.8 V) - compatible with 1.5 V or 1.8 V I/O supply rails
Core Supply1.8 V ±0.1 V - powers internal logic and array; decoupling critical for jitter-sensitive PLL operation
Package165-ball FBGA (15 mm × 17 mm × 1.4 mm) - standard footprint for high-pin-count DDR memory modules

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm body, 1.4 mm height, Pb-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous Data InputLatched on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1
Q[17:0]Synchronous Data OutputDriven on rising edges of C/C (or K/K); impedance-matched to CQ/CQ for clean capture
K / KInput Clock (P/N)Captures all synchronous inputs; initiates all accesses on rising edge of K
C / COutput Clock (P/N)Controls Q[17:0] timing; used with CQ/CQ to deskew flight time across multiple devices
CQ / CQEcho Clock (P/N)Free-running, phase-aligned copies of C/C; simplify controller data capture without per-device delay tuning
ZQImpedance Calibration InputConnects to external RQ-to-GND to set output driver strength to 0.2 × RQ; prevents signal reflection
DOFFPLL Disable ControlActive-LOW; disables PLL to revert to DDR-I timing (≤167 MHz) for backward compatibility or power savings

Key Features

FeatureDesign Value
DDR-II Separate I/O ArchitectureEliminates bidirectional bus turnaround delay by dedicating D[17:0] to write and Q[17:0] to read paths
Two-Word Burst AccessDelivers 36 bits per clock cycle without address bus update, reducing controller address path complexity
Programmable Output Impedance (ZQ)Enables real-time matching to PCB trace impedance, maintaining signal integrity at 666 MHz data rates
Integrated PLL with Echo ClocksProvides deterministic data-eye positioning relative to CQ/CQ, removing need for board-level delay tuning
JTAG 1149.1 Test Access PortSupports boundary-scan testing of interconnects in dense memory subsystems without physical probe access

Applications

Telecom Line Card BufferingHigh-Speed Packet Switching

Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface modules.

IC Role / Device Role / Timing Role: Low-latency, burst-access SRAM serving as first-level packet buffer between SerDes and traffic manager ASIC.

Use Value: 1.5-cycle DDR-II latency and echo-clock–synchronized outputs ensure deterministic header fetch timing across multi-chip memory banks.

Use Scenario: Temporary storage of forwarding table entries and queue state in modular Ethernet switching fabrics.

IC Role / Device Role / Timing Role: High-throughput pipelined memory providing concurrent read/write access to lookup engines and scheduler logic.

Use Value: Two-word burst + separate I/O eliminates bus contention, sustaining >5 Gbps aggregate bandwidth per device under full load.

Test Equipment Pattern MemoryRadar Signal Processing Buffer

Use Scenario: Holding stimulus patterns and expected response vectors in automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clocks for repeatable timing margin validation.

Use Value: PLL-controlled data placement and CQ/CQ echo clocks enable sub-100 ps setup/hold margin control at 333 MHz.

Use Scenario: Intermediate storage of digitized IF samples between ADC and FFT engine in phased-array radar receivers.

IC Role / Device Role / Timing Role: High-reliability burst buffer absorbing variable-rate ADC output before fixed-rate processing pipeline.

Use Value: 1.8 V core + HSTL I/O ensures robust operation in thermally constrained RF chassis environments with minimal power supply noise coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SIO SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256A-15JCINSingle-data-rate (SDR), 256 K × 18, 15 ns access, 3.3 V core/I/OLower density, no DDR timing or echo clocks; suited for legacy controller interfacesSelect only if DDR-II timing, burst-2, or impedance calibration are not required
IS61WV102418BLL-10TLISDR, 1 M × 18, 10 ns access, 3.3 V, no PLL or ZQ calibrationLacks DDR-II SIO, echo clocks, and programmable drive; limited to simpler, lower-speed designsChoose when cost sensitivity outweighs bandwidth and signal integrity requirements

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10TLI, the CY7C1623KV18-333BZXC delivers 5.6× higher bandwidth via DDR-II and eliminates board-level timing tuning through integrated PLL and echo clocks-critical for scalable multi-SRAM systems.

Availability

CY7C1623KV18-333BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test equipment, and radar signal processing applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1623KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions.

The CY7C1623KV18 belongs to Infineon's legacy Cypress DDR-II SIO SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in telecom and instrumentation systems where deterministic timing and signal integrity are non-negotiable.

FAQ

What is the function of the DOFF pin?

The DOFF pin is an active-LOW PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR-I mode with 1-cycle read latency and maximum 167 MHz operation. For full DDR-II performance at 333 MHz, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.

Can CY7C1623KV18-333BZXC operate without external echo clocks (CQ/CQ)?

Yes. The device supports single-clock mode using only K/K for both input and output timing. In this mode, Q[17:0] is driven on rising edges of K/K, and CQ/CQ are not required-but system-level timing margin and skew control degrade significantly compared to echo-clock–assisted operation.

How does ZQ pin calibration affect signal integrity?

ZQ connects to an external resistor (RQ) tied to ground, enabling on-die calibration of Q[17:0] and CQ/CQ output driver impedance to 0.2 × RQ. This matches PCB trace impedance (typically 50 Ω), minimizing reflections and improving eye diagram opening at 666 MHz DDR data rates.

Is JTAG boundary scan supported in all operating modes?

Yes. IEEE 1149.1 JTAG functionality remains fully operational regardless of DOFF state or clock configuration. TAP signals (TCK, TMS, TDI, TDO) are asynchronous and independent of K/K or C/C domains, enabling reliable interconnect testing during power-up, functional operation, or PLL-disabled mode.

CY7C1623KV18-333BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1623KV18-333BZXC FAQ

1.How can I place an order for CY7C1623KV18-333BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1623KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1623KV18-333BZXC reliable?

The price and inventory of CY7C1623KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1623KV18-333BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1623KV18-333BZXC transactions.

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CY7C1623KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1623KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1623KV18-333BZXC?

For technical support, including CY7C1623KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1623KV18-333BZXC requirements.

6.How does Aetrix verify that CY7C1623KV18-333BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1623KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1623KV18-333BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1623KV18-333BZXC?

All CY7C1623KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1623KV18-333BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1623KV18-333BZXC part is unused and in its original packaging.

Return procedure for CY7C1623KV18-333BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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