Cypress Semiconductor Corp CY7C1623KV18-333BZXC
- Part No.:
- CY7C1623KV18-333BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1623KV18-333BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:316
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Product details
Overview
CY7C1623KV18-333BZXC from Infineon Technologies (formerly Cypress) is a 144-Mbit (8 M × 18) DDR-II Synchronous Pipelined SRAM with Separate I/O architecture, operating at 333 MHz clock frequency and delivering 666 MHz effective data rate. It features dual input clocks (K/K), echo clocks (CQ/CQ), programmable impedance via ZQ, and supports both DDR-I (1-cycle read latency, DOFF = LOW) and DDR-II (1.5-cycle read latency, DOFF = HIGH) modes. Used in high-bandwidth networking line cards and packet buffering subsystems requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1623KV18-333BZXC datasheet, CY7C1623KV18-333BZXC pinout, CY7C1623KV18-333BZXC application, or CY7C1623KV18-333BZXC equivalent, key selection criteria include DDR-II SIO timing compliance, HSTL-18 I/O compatibility, 165-ball FBGA mechanical fit, PLL-enabled data placement accuracy, and burst-2 address-to-data timing alignment across multi-device stacks.
Technical Context
The device implements a two-port DDR-II SIO architecture: dedicated read port (Q[17:0], C/C, CQ/CQ) and write port (D[17:0], K/K), eliminating bus turnaround overhead. All synchronous inputs are registered on rising edges of K/K, while outputs are edge-aligned to C/C (or K/K in single-clock mode), enabling precise skew management in parallel memory systems.
Its internal PLL synchronizes output data placement to echo clocks, supporting stable 333 MHz operation with 1.5-cycle read latency when DOFF = HIGH. The ZQ pin enables dynamic output impedance calibration against system trace impedance (via external RQ resistor), ensuring signal integrity for 666 MHz DDR data transfers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 144 Mbit (8 M × 18), enabling 2-word burst per access without address re-latching |
| Max Clock Frequency | 333 MHz - defines maximum sustained command rate and system bandwidth ceiling |
| Data Rate | 666 MHz DDR - doubles throughput versus single-data-rate at same clock frequency |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - determines minimum pipeline depth for controller design |
| I/O Voltage | HSTL Class I (1.4 V–1.8 V) - compatible with 1.5 V or 1.8 V I/O supply rails |
| Core Supply | 1.8 V ±0.1 V - powers internal logic and array; decoupling critical for jitter-sensitive PLL operation |
| Package | 165-ball FBGA (15 mm × 17 mm × 1.4 mm) - standard footprint for high-pin-count DDR memory modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm body, 1.4 mm height, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous Data Input | Latched on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1 |
| Q[17:0] | Synchronous Data Output | Driven on rising edges of C/C (or K/K); impedance-matched to CQ/CQ for clean capture |
| K / K | Input Clock (P/N) | Captures all synchronous inputs; initiates all accesses on rising edge of K |
| C / C | Output Clock (P/N) | Controls Q[17:0] timing; used with CQ/CQ to deskew flight time across multiple devices |
| CQ / CQ | Echo Clock (P/N) | Free-running, phase-aligned copies of C/C; simplify controller data capture without per-device delay tuning |
| ZQ | Impedance Calibration Input | Connects to external RQ-to-GND to set output driver strength to 0.2 × RQ; prevents signal reflection |
| DOFF | PLL Disable Control | Active-LOW; disables PLL to revert to DDR-I timing (≤167 MHz) for backward compatibility or power savings |
Key Features
| Feature | Design Value |
|---|---|
| DDR-II Separate I/O Architecture | Eliminates bidirectional bus turnaround delay by dedicating D[17:0] to write and Q[17:0] to read paths |
| Two-Word Burst Access | Delivers 36 bits per clock cycle without address bus update, reducing controller address path complexity |
| Programmable Output Impedance (ZQ) | Enables real-time matching to PCB trace impedance, maintaining signal integrity at 666 MHz data rates |
| Integrated PLL with Echo Clocks | Provides deterministic data-eye positioning relative to CQ/CQ, removing need for board-level delay tuning |
| JTAG 1149.1 Test Access Port | Supports boundary-scan testing of interconnects in dense memory subsystems without physical probe access |
Applications
| Telecom Line Card Buffering | High-Speed Packet Switching |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in OC-192/STM-64 line interface modules. IC Role / Device Role / Timing Role: Low-latency, burst-access SRAM serving as first-level packet buffer between SerDes and traffic manager ASIC. Use Value: 1.5-cycle DDR-II latency and echo-clock–synchronized outputs ensure deterministic header fetch timing across multi-chip memory banks. | Use Scenario: Temporary storage of forwarding table entries and queue state in modular Ethernet switching fabrics. IC Role / Device Role / Timing Role: High-throughput pipelined memory providing concurrent read/write access to lookup engines and scheduler logic. Use Value: Two-word burst + separate I/O eliminates bus contention, sustaining >5 Gbps aggregate bandwidth per device under full load. |
| Test Equipment Pattern Memory | Radar Signal Processing Buffer |
Use Scenario: Holding stimulus patterns and expected response vectors in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: Deterministic-access memory synchronized to pattern generator clocks for repeatable timing margin validation. Use Value: PLL-controlled data placement and CQ/CQ echo clocks enable sub-100 ps setup/hold margin control at 333 MHz. | Use Scenario: Intermediate storage of digitized IF samples between ADC and FFT engine in phased-array radar receivers. IC Role / Device Role / Timing Role: High-reliability burst buffer absorbing variable-rate ADC output before fixed-rate processing pipeline. Use Value: 1.8 V core + HSTL I/O ensures robust operation in thermally constrained RF chassis environments with minimal power supply noise coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SIO SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256A-15JCIN | Single-data-rate (SDR), 256 K × 18, 15 ns access, 3.3 V core/I/O | Lower density, no DDR timing or echo clocks; suited for legacy controller interfaces | Select only if DDR-II timing, burst-2, or impedance calibration are not required |
| IS61WV102418BLL-10TLI | SDR, 1 M × 18, 10 ns access, 3.3 V, no PLL or ZQ calibration | Lacks DDR-II SIO, echo clocks, and programmable drive; limited to simpler, lower-speed designs | Choose when cost sensitivity outweighs bandwidth and signal integrity requirements |
Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10TLI, the CY7C1623KV18-333BZXC delivers 5.6× higher bandwidth via DDR-II and eliminates board-level timing tuning through integrated PLL and echo clocks-critical for scalable multi-SRAM systems.
Availability
CY7C1623KV18-333BZXC is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test equipment, and radar signal processing applications requiring stable component supply and long-term lifecycle support.
Supply support for CY7C1623KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions.
The CY7C1623KV18 belongs to Infineon's legacy Cypress DDR-II SIO SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in telecom and instrumentation systems where deterministic timing and signal integrity are non-negotiable.
FAQ
What is the function of the DOFF pin?
The DOFF pin is an active-LOW PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR-I mode with 1-cycle read latency and maximum 167 MHz operation. For full DDR-II performance at 333 MHz, DOFF must be held HIGH via a ≤10 kΩ pull-up to VDDQ.
Can CY7C1623KV18-333BZXC operate without external echo clocks (CQ/CQ)?
Yes. The device supports single-clock mode using only K/K for both input and output timing. In this mode, Q[17:0] is driven on rising edges of K/K, and CQ/CQ are not required-but system-level timing margin and skew control degrade significantly compared to echo-clock–assisted operation.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor (RQ) tied to ground, enabling on-die calibration of Q[17:0] and CQ/CQ output driver impedance to 0.2 × RQ. This matches PCB trace impedance (typically 50 Ω), minimizing reflections and improving eye diagram opening at 666 MHz DDR data rates.
Is JTAG boundary scan supported in all operating modes?
Yes. IEEE 1149.1 JTAG functionality remains fully operational regardless of DOFF state or clock configuration. TAP signals (TCK, TMS, TDI, TDO) are asynchronous and independent of K/K or C/C domains, enabling reliable interconnect testing during power-up, functional operation, or PLL-disabled mode.
CY7C1623KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 8M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1623KV18-333BZXC FAQ
1.How can I place an order for CY7C1623KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1623KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1623KV18-333BZXC reliable?
The price and inventory of CY7C1623KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1623KV18-333BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1623KV18-333BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1623KV18-333BZXC transactions.
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4.How is shipping managed for CY7C1623KV18-333BZXC?
CY7C1623KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1623KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1623KV18-333BZXC?
For technical support, including CY7C1623KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1623KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C1623KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1623KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1623KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1623KV18-333BZXC?
All CY7C1623KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1623KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1623KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C1623KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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