Cypress Semiconductor Corp CY7C1625KV18-300BZXC

Overview

CY7C1625KV18 from Infineon Technologies (formerly Cypress) is a 144-Mbit QDR® II SRAM with 16M × 9 organization, 360-MHz clock support, 720-MHz DDR data rate on independent read/write ports, and 1.8-V core / 1.4–1.8-V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric interfaces.

For engineers reviewing the CY7C1625KV18 datasheet, CY7C1625KV18 pinout, CY7C1625KV18 application, or CY7C1625KV18 equivalent, key selection criteria include two-word burst timing, echo clock (CQ/CQ) synchronization, DOFF-configurable 1.5-cycle vs. 1-cycle read latency, HSTL-18 output drive, and JTAG 1149.1 test access compliance.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed address bus, enabling true concurrent transactions without bus turnaround. It uses separate K/K clocks for address/data capture and C/C clocks for output timing, with echo clocks (CQ/CQ) aligned to output data edges to simplify high-speed capture at the controller.

The device integrates a PLL for precise internal data placement, supports depth expansion via RPS/WPS controls, and delivers full data coherency through synchronous self-timed writes. Its 165-ball FBGA package (15 × 17 × 1.4 mm) is optimized for signal integrity in >300-MHz memory subsystems with controlled impedance routing.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with AS7C3256B-15JIN and IS61WV102416BLL-10MLI, CY7C1625KV18 uniquely delivers concurrent dual-port DDR bandwidth, echo-clock timing alignment, and JTAG testability - making it irreplaceable in systems requiring >500 MB/s sustained throughput with sub-200 ps timing margins.

Availability

CY7C1625KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric interface, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1625KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full QDR® II SRAM portfolio, including reliability validation, long-term manufacturing, and technical documentation.

This device belongs to Infineon's high-performance memory product line, engineered specifically for deterministic-latency, high-throughput data movement in networking, telecom, and test instrumentation systems.

FAQ

What is the function of the DOFF pin on CY7C1625KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted high, it enables QDR II operation with 1.5-cycle latency; when low, it reverts to QDR I compatibility with 1-cycle latency. This pin is sampled synchronously on the K clock edge at initialization and remains latched until reset. It directly affects timing budget allocation for read data valid windows and must be set before memory access begins.

Can CY7C1625KV18 operate with only a single clock domain (K only)?

Yes - the device supports single-clock mode where K serves as both address latch and output clock source. In this configuration, C and C inputs are tied to K and K respectively, and output data is driven on K/K edges instead of C/C. However, echo clock (CQ/CQ) functionality and optimal deskew capability are lost, reducing maximum reliable data rate to ≤250 MHz due to increased flight time mismatch.

How does ZQ calibration work on CY7C1625KV18?

ZQ calibration uses an external 240-Ω resistor connected between the ZQ pin and ground to tune internal HSTL output driver impedance. During power-up or upon command via JTAG, the device measures reference current and adjusts pull-up/pull-down transistor sizing to match target 240-Ω differential impedance. This compensates for process/voltage/temperature variation and ensures consistent signal integrity across operating conditions.

Is JTAG boundary scan supported during normal memory operation?

Yes - JTAG 1149.1 test access operates independently of memory read/write functions. The TAP controller runs concurrently with active memory transactions, allowing real-time interconnect testing without halting data flow. Boundary scan cells monitor all primary I/O pins (D[8:0], Q[8:0], clocks, controls), and test patterns can be applied while the device buffers live traffic in network applications.