Cypress Semiconductor Corp CY7C1625KV18-333BZXC
- Part No.:
- CY7C1625KV18-333BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1625KV18-333BZXC.pdf
- Description:
- IC SRAM 144MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1625KV18-333BZXC from Infineon Technologies (formerly Cypress) is a 16M × 9, 144-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock frequency, 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (720 Mbps effective data rate), echo clocks (CQ/CQ), and PLL-based timing control. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1625KV18-333BZXC datasheet, CY7C1625KV18-333BZXC pinout, CY7C1625KV18-333BZXC application, or CY7C1625KV18-333BZXC equivalent, key selection criteria include 333 MHz operation, 165-ball FBGA package, 1.8 V core/1.4–1.8 V I/O compatibility, QDR II read latency modes (1-cycle or 1.5-cycle), and JTAG 1149.1 test access support.
Technical Context
The device implements true dual-port synchronous SRAM architecture with physically independent read and write data paths-no bus turnaround required. Its QDR II interface uses separate K/K clocks for address/data input timing and C/C clocks for output timing, enabling precise deskewing via echo clocks (CQ/CQ) and minimizing flight-time mismatch across high-speed PCB traces.
Internally, it employs pipelined, self-timed writes and synchronous address latching on alternating K-clock edges. The DOFF pin selects between 1-cycle (DOFF = low) and 1.5-cycle (DOFF = high) read latency, while the PLL ensures accurate data placement relative to output clocks-critical for deterministic timing in multi-chip memory subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (16M × 9 organization) |
| Max Clock Frequency | 333 MHz - determines maximum sustained bandwidth of 1.2 Gbps per port |
| Data Rate | 720 Mbps (DDR on both read/write ports) - enables concurrent full-rate transfers without contention |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines logic threshold and power consumption baseline for memory array |
| I/O Supply Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-compatible controllers |
| Read Latency Modes | Configurable 1-cycle (DOFF = low) or 1.5-cycle (DOFF = high) - balances timing margin vs. throughput in system-level timing closure |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[8:0] | Synchronous write data inputs | Sampled on rising edge of K clock; 9-bit parallel data path for write operations |
| Q[8:0] | Synchronous read data outputs | Driven on rising edges of C/C clocks; tristated when RPS is deasserted |
| K / K | Positive/negative input clocks | Used for address/data capture; K only used for rising-edge sampling per QDR II spec |
| C / C | Positive/negative output clocks | Control read data launch timing; paired with CQ/CQ for receiver deskew |
| CQ / CQ | Echo clocks | Output copies of C/C with matched trace delay-enable source-synchronous capture at controller |
| RPS / WPS | Read/Write port select | Active-low enables port transaction; deselection auto-tristates Q[8:0] or ignores D[8:0] |
| BWS0 | Byte write select | Controls D[8:0]; active-low enables writing to all 9 bits during burst |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II mode); low = 1-cycle latency (QDR I compatibility) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround overhead-enables 100% utilization of clock cycles for concurrent read+write |
| Two-word burst architecture | Each access delivers two sequential 9-bit words-reduces address strobe overhead and improves burst efficiency |
| HSTL Class I output drivers | Supports 1.5 V/1.8 V I/O standards with programmable drive strength-ensures signal integrity up to 720 Mbps |
| JTAG 1149.1 boundary scan | Enables in-system test and debug of interconnects without requiring external test fixtures |
| PLL-based output timing | Aligns Q[8:0] output edges precisely to C/C clocks-reduces setup/hold uncertainty in high-speed receivers |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-throughput, low-latency dual-port buffer interfacing directly with SerDes MAC controllers. Use Value: Concurrent read/write capability eliminates arbitration delays; 333 MHz operation sustains >1 Gbps per port under real traffic loads. |
Use Scenario: Frame assembly/disassembly buffers in carrier-grade optical transport equipment (OTN, SONET). IC Role / Device Role / Timing Role: Synchronous pipeline stage between framer and DSP engine, synchronized to line-rate clocks. Use Value: Echo clocks (CQ/CQ) enable deterministic capture at FPGA receivers; 1.5-cycle latency mode eases timing closure at 333 MHz. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of channel estimation coefficients and FFT outputs in LTE/5G massive MIMO baseband units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by multiple DSP cores via shared bus fabric. Use Value: Independent read/write ports allow simultaneous coefficient load and result store-reducing pipeline stalls by ~35% vs. single-port SRAM. |
Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic-access memory referenced by state-machine sequencer running at 333 MHz. Use Value: JTAG boundary scan validates interconnect integrity before pattern execution; 165-ball FBGA supports dense ATE board layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1625KV18-363BZXC | 360 MHz max clock (vs. 333 MHz); identical pinout, voltage, and feature set | Requires tighter timing margins; suitable where system clock budget allows higher frequency | Select when bandwidth >1.2 Gbps per port is required and PCB layout supports 360 MHz signal integrity |
| AS7C331625PFS-333BIN | Same density and speed but uses SSTL-18 I/O (not HSTL); no echo clocks or DOFF latency control | Lacks QDR II-specific timing features-requires external deskew circuitry and fixed 1-cycle latency | Choose only if legacy SSTL-18 infrastructure exists and echo clock/JTAG features are non-critical |
Compared with CY7C1625KV18-333BZXC, the -363 variant delivers +8% bandwidth at same voltage and footprint, while the AS7C alternative trades QDR II timing precision for SSTL-18 compatibility-making it less suitable for systems requiring deterministic 1.5-cycle latency or source-synchronous echo clock capture.
Availability
CY7C1625KV18-333BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and baseband processing cache applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for CY7C1625KV18-333BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, for networking, communications, and test equipment markets.
This device belongs to Infineon's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in systems demanding concurrent read/write access without bus contention or turnaround penalties.
FAQ
What is the function of the DOFF pin on CY7C1625KV18-333BZXC?
The DOFF (Data Output Frequency Flag) pin configures read latency mode: when asserted high, it enables 1.5-cycle latency (standard QDR II operation); when low, it reverts to 1-cycle latency (QDR I compatibility mode). This setting directly affects timing budget allocation for read data capture at the controller and must be held stable during operation.
Can CY7C1625KV18-333BZXC operate with only a single clock input?
Yes-it supports single-clock mode where K and C are tied together and K and C are tied together. In this configuration, all timing references derive from one differential clock pair, simplifying clock distribution at the cost of reduced deskew capability compared to dual-clock mode with echo clocks.
What is the purpose of the BWS0 pin in CY7C1625KV18-333BZXC?
BWS0 (Byte Write Select 0) is an active-low signal controlling write enable for the entire 9-bit D[8:0] bus. When asserted, it permits writing to all nine bits during a burst; when deasserted, the corresponding byte remains unaltered-enabling partial writes without read-modify-write cycles.
Is JTAG boundary scan supported on CY7C1625KV18-333BZXC?
Yes-the device implements IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. It supports boundary scan testing of all I/O pins and internal logic, enabling verification of solder joint integrity and interconnect routing on populated PCBs without physical probe access.
CY7C1625KV18-333BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 144Mbit
- Memory Organization:
- 16M x 9
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1625KV18-333BZXC FAQ
1.How can I place an order for CY7C1625KV18-333BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1625KV18-333BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1625KV18-333BZXC reliable?
The price and inventory of CY7C1625KV18-333BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1625KV18-333BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1625KV18-333BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1625KV18-333BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1625KV18-333BZXC?
CY7C1625KV18-333BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1625KV18-333BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1625KV18-333BZXC?
For technical support, including CY7C1625KV18-333BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1625KV18-333BZXC requirements.
6.How does Aetrix verify that CY7C1625KV18-333BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1625KV18-333BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1625KV18-333BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1625KV18-333BZXC?
All CY7C1625KV18-333BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1625KV18-333BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1625KV18-333BZXC part is unused and in its original packaging.
Return procedure for CY7C1625KV18-333BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1625KV18-333BZXC Tags

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