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Cypress Semiconductor Corp CY7C1643KV18-400BZC

Part No.:
CY7C1643KV18-400BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1643KV18-400BZC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,243

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Product details

Overview

CY7C1643KV18 from Cypress Semiconductor is a 144-Mbit QDR® II+ SRAM with 8 M × 18 organization, 450 MHz clock support, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It operates at 1.8 V core (±0.1 V) and 1.4–1.8 V I/O supply, housed in a 165-ball FBGA (15 × 17 × 1.4 mm), and targets high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1643KV18 datasheet, CY7C1643KV18 pinout, CY7C1643KV18 application, or CY7C1643KV18 equivalent, key selection criteria include its quad-data-rate burst architecture, echo-clock–assisted timing closure, JTAG 1149.1 testability, DOFF-configurable latency mode, and HSTL-compatible I/O for 450 MHz system synchronization.

Technical Context

The device implements a true dual-port synchronous SRAM architecture with physically independent read and write data paths-no bus turnaround required. Its QDR II+ core uses two input clocks (K/K̄) to latch address and data on rising edges only, while echo clocks (CQ/CQ̄) align output data capture with system receivers.

An internal PLL enables precise data placement at 450 MHz; when disabled via DOFF low, it reverts to QDR I mode (≤167 MHz, 1-cycle latency). Depth expansion is supported via RPS/WPS and BWS[1:0], and all operations-including byte-write masking-are fully synchronous with pipelined addressing and self-timed writes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8 M × 18 configuration)
Max Clock Frequency 450 MHz - enables 900 MT/s DDR throughput per port
Read Latency 2.0 clock cycles - fixed when DOFF = HIGH; reduces timing margin pressure vs. 1-cycle alternatives
Core Supply 1.8 V ± 0.1 V - mandates tight regulation; decoupling critical for signal integrity
I/O Supply Range 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL-15/18 interfaces
Package 165-ball FBGA (15 × 17 × 1.4 mm) - requires controlled-impedance PCB layout and ZQ calibration
Burst Length Four-word burst - delivers 72-bit (18 × 4) read/write per access, halving address bus toggling frequency

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Write data inputs Latched on K/K̄ rising edges; 18-bit parallel input path for burst writes
Q[17:0] Read data outputs DDR outputs aligned to CQ/CQ̄; tri-stated when RPS deasserted
RPS, WPS Port select controls Active-low synchronous enables; allow independent read/write port activation
BWS[1:0] Byte write selects Mask D[8:0] (BWS0) and D[17:9] (BWS1); preserve unselected bytes during partial writes
K, K̄ Input clocks Rising-edge–triggered timing reference for all synchronous inputs and outputs
CQ, CQ̄ Echo clocks Free-running, phase-aligned copies of K/K̄; simplify high-speed data capture at receiver
QVLD Data validity indicator Edge-aligned with CQ/CQ̄; signals valid Q[17:0] data for receiver sampling
DOFF PLL disable control Active-low; disables PLL to enter QDR I mode (167 MHz, 1-cycle latency)
ZQ Impedance calibration input Connects to external resistor to ground; tunes CQ/Q output impedance to match trace Z₀
TCK/TMS/TDI/TDO JTAG boundary scan interface IEEE 1149.1 compliant; enables production test and debug without intrusive probing

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates data bus turnaround overhead and contention-enables full-duplex memory access at 450 MHz
Four-word burst architecture Reduces address bus switching by 75% vs. single-word access; lowers EMI and routing complexity
Programmable output impedance (ZQ) Enables on-die termination matching to PCB trace impedance-improves signal integrity without external resistors
DOFF-selectable latency mode Hardware-configurable switch between QDR II+ (2-cycle, 450 MHz) and QDR I (1-cycle, ≤167 MHz) operation
HSTL-15/18 compatible I/O Supports interoperability with FPGA/ASIC memory controllers using standard high-speed logic families

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G/40G Ethernet line cards with real-time forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, concurrent-access buffer between ingress parser and egress scheduler engines.

Use Value: 900 MT/s per port sustains full line-rate traffic; echo clocks (CQ/CQ̄) enable reliable capture at FPGA receiver inputs without complex deskew logic.

Use Scenario: Capturing high-fidelity waveform samples from multi-GHz ADCs in automated test equipment (ATE) systems.

IC Role / Device Role / Timing Role: High-bandwidth acquisition memory interfacing directly to FPGA-based pattern generators and comparators.

Use Value: Four-word burst reduces address generation logic; 2.0-cycle latency ensures deterministic read timing across temperature and voltage corners.

Telecom Baseband Processing Real-Time Video Frame Buffering

Use Scenario: Temporary storage of OFDM symbol data between FFT/IFFT blocks in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Synchronous pipeline stage providing jitter-free, low-latency memory access for DSP-intensive modulation/demodulation chains.

Use Value: Independent RPS/WPS allows simultaneous symbol write (from FFT) and read (to IFFT) without arbitration delay or bus contention.

Use Scenario: Intermediate frame storage in broadcast-grade video encoders handling 4K60 YUV422 streams.

IC Role / Device Role / Timing Role: Dual-port buffer decoupling sensor capture pipeline from compression engine, enabling seamless frame handoff.

Use Value: 1.4–1.8 V I/O flexibility matches FPGA transceiver voltage settings; ZQ calibration maintains signal fidelity across wide temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150 144-Mbit QDR II+, same 8M×18 config, but 350 MHz max clock (700 MT/s), no ZQ calibration, different FBGA pinout (165-ball vs. IDT's 167-ball) Lower bandwidth ceiling; lacks on-die impedance tuning-requires external termination resistors Select when system clock ≤350 MHz and board layout cannot accommodate ZQ routing
ISSI IS61WV102418B Asynchronous 18-Mbit SRAM (1M×18), 15 ns access, no DDR/QDR architecture, single-port, 3.3 V only No burst, no echo clocks, no concurrent read/write-unsuitable for >200 MHz sustained throughput Only viable for legacy designs requiring pin-compatible drop-in replacement with relaxed timing and bandwidth

Compared with IDT72T36150 and IS61WV102418B, CY7C1643KV18 delivers higher bandwidth (900 vs. 700 MT/s), integrated impedance control (ZQ), and deterministic 2-cycle latency-making it optimal for new 450 MHz designs where signal integrity and timing closure are critical.

Availability

CY7C1643KV18 is available at Aetrix Electronics and suitable for network line cards, high-speed test instrumentation, telecom baseband units, and broadcast video encoders requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1643KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1643KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory subsystems in networking and test equipment where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin, and how does it affect timing?

The DOFF pin disables the internal PLL when asserted low. In this state, the device operates in QDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. When DOFF is high, the PLL is active, enabling 2-cycle latency and full 450 MHz operation. Timing parameters differ significantly between modes-designers must select the correct datasheet table based on DOFF configuration.

How does the ZQ pin calibrate output impedance, and what external component is required?

ZQ connects to a precision resistor (RQ) tied to ground; the device measures RQ and adjusts driver strength so that CQ, CQ̄, and Q[17:0] output impedances equal 0.2 × RQ. A typical value is 240 Ω, yielding ~48 Ω output impedance. Direct connection to VDDQ enables minimum impedance mode (~30 Ω); floating or grounding ZQ is prohibited and may damage the device.

Can CY7C1643KV18 perform simultaneous read and write to the same memory location?

No. While the device supports concurrent read and write transactions on independent addresses, writing to an address currently being read from results in undefined data on Q[17:0]. The architecture guarantees coherency only for non-overlapping accesses; overlapping operations require external arbitration or address sequencing to avoid corruption.

What is the role of the QVLD signal, and how should it be used in system design?

QVLD is an edge-aligned validity indicator that asserts synchronously with CQ/CQ̄ to mark when Q[17:0] data is stable and ready for sampling. It must be routed with matched length to CQ/CQ̄ and used as a strobe or qualifier in the receiving FPGA/ASIC-never ignored or substituted with clock gating. Its timing is guaranteed across voltage and temperature per AC switching specs.

CY7C1643KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1643KV18-400BZC FAQ

1.How can I place an order for CY7C1643KV18-400BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1643KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1643KV18-400BZC reliable?

The price and inventory of CY7C1643KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1643KV18-400BZC is usually 5 days.

3.What payment methods are accepted for CY7C1643KV18-400BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1643KV18-400BZC transactions.

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4.How is shipping managed for CY7C1643KV18-400BZC?

CY7C1643KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1643KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1643KV18-400BZC?

For technical support, including CY7C1643KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1643KV18-400BZC requirements.

6.How does Aetrix verify that CY7C1643KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1643KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1643KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C1643KV18-400BZC?

All CY7C1643KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1643KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1643KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C1643KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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