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Cypress Semiconductor Corp CY7C1643KV18-400BZXC

Part No.:
CY7C1643KV18-400BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1643KV18-400BZXC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,697

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Product details

Overview

CY7C1643KV18-400BZXC from Cypress Semiconductor is a 144-Mbit QDR® II+ SRAM with 8 M × 18 organization, 450 MHz max clock (400 MHz rated), 2.0-cycle read latency, and separate read/write DDR ports delivering 900 Mbps per port. It operates at 1.8 V core and 1.4–1.8 V I/O, housed in a 165-ball FBGA (15 × 17 × 1.4 mm), and targets high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1643KV18-400BZXC datasheet, CY7C1643KV18-400BZXC pinout, CY7C1643KV18-400BZXC application, or CY7C1643KV18-400BZXC equivalent, key selection criteria include burst depth (4-word), echo clock timing (CQ/CQ), QVLD validity signaling, DOFF-controlled PLL mode switching, and HSTL-18 I/O compliance for backplane-adjacent memory interfaces.

Technical Context

This device implements true quad data rate architecture via independent, synchronous read and write ports-each using DDR interfaces clocked by complementary K/K inputs-enabling concurrent access without bus turnaround. Its internal 2.0-cycle pipelined read latency is fixed when DOFF = HIGH, and it reverts to QDR I mode (1-cycle latency, ≤167 MHz) when DOFF = LOW.

The SRAM uses echo clocks (CQ/CQ) edge-aligned with output data and QVLD to simplify high-speed capture; ZQ pin enables on-die impedance tuning to match system trace impedance (0.2 × RQ). All address and control signals are registered on K/K rising edges, and writes are self-timed with byte-write select (BWS0/BWS1) enabling partial-word updates without read-modify-write.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8 M × 18 organization)
Max Clock Frequency 400 MHz (guaranteed operation; 450 MHz max with derating)
Read Latency 2.0 clock cycles (DOFF = HIGH); enables deterministic timing for pipeline-constrained systems
Data Rate per Port 900 Mbps (DDR at 400 MHz K/K clocks; no bus turnaround required)
Supply Voltages VDD = 1.8 V ± 0.1 V; VDDQ = 1.4–1.8 V (supports 1.5 V or 1.8 V I/O interface)
Output Interface HSTL Class I outputs with programmable drive strength and ZQ-calibrated impedance
Package 165-ball FBGA (15 × 17 × 1.4 mm; RoHS-compliant, Pb-free option available)

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Write data input bus 18-bit synchronous input sampled on rising edges of K/K; supports partial writes via BWS0/BWS1
Q[17:0] Read data output bus 18-bit DDR output aligned with CQ/CQ; tri-stated automatically when RPS deasserted
RPS / WPS Read/Write port select Active-low synchronous controls; enables independent port activation for concurrent transactions
BWS0, BWS1 Byte write select Active-low controls for D[8:0] and D[17:9]; allows selective 9-bit word updates without full-word overwrite
K / K Differential clock inputs Rising edges latch all synchronous inputs; K drives read path, K drives write path
CQ / CQ Echo clock outputs Free-running, edge-aligned copies of K/K; used for source-synchronous data capture at receiver
QVLD Valid data indicator Asserted coincident with first valid Q[17:0] word in burst; simplifies FIFO or deserializer synchronization
DOFF PLL disable input Active-low control: HIGH enables QDR II+ mode (2-cycle latency); LOW forces QDR I mode (1-cycle, ≤167 MHz)
ZQ Impedance calibration reference Connects to external resistor to ground (RQ); sets output driver impedance to 0.2 × RQ for signal integrity

Key Features

Feature Design Value
Four-word burst architecture Reduces effective address bus frequency by 4× versus single-word access; lowers routing complexity and timing closure burden
Separate read/write DDR ports Eliminates bidirectional bus turnaround delays and contention risks-critical for full-duplex packet buffers
Programmable output impedance (ZQ) Enables dynamic matching to PCB trace impedance without external termination resistors; improves signal integrity up to 900 Mbps
QVLD + echo clocks (CQ/CQ) Provides deterministic, source-synchronous timing reference for reliable data capture in FPGA/ASIC receivers
JTAG 1149.1 boundary scan Supports IEEE-compliant test access for production board-level validation and debug of high-density memory interconnects

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing ingress/egress packets in multi-gigabit Ethernet or OTN switch fabric with zero-latency forwarding requirements.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with concurrent read/write capability and deterministic 2-cycle access timing.

Use Value: Enables full-duplex 10G+ line-rate buffering without arbitration stalls-achieving >90% sustained bandwidth utilization.

Use Scenario: Serving as frame buffer in carrier-grade SDH/SONET add-drop multiplexers requiring jitter-free data handoff between processing stages.

IC Role / Device Role / Timing Role: Synchronous burst memory with echo-clocked outputs ensuring precise data alignment across ASIC-to-ASIC links.

Use Value: Eliminates setup/hold violations at 400 MHz clock rates by providing CQ-aligned QVLD and data-reducing timing margin allocation by 150 ps.

High-Speed Test Equipment Memory Real-Time Signal Processing Buffer

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) with simultaneous acquisition and analysis.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ping-pong buffer-writing new samples while reading prior ones for real-time FFT.

Use Value: Concurrent access avoids pipeline bubbles; 4-word burst reduces address generation logic overhead by 75% vs. discrete addressing.

Use Scenario: Intermediate storage for radar pulse-Doppler processing chains where phase coherence across bursts must be preserved.

IC Role / Device Role / Timing Role: Deterministic-latency memory with QVLD-synchronized output enabling cycle-accurate sample alignment in FPGA-based DSP pipelines.

Use Value: Maintains sub-nanosecond inter-burst timing consistency-critical for coherent integration over 1024-sample windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 144-Mbit QDR II+, 10 ns read latency (vs. 2-cycle), 350 MHz max, ×18 only, no ZQ calibration Lacks echo clocks and QVLD; requires external termination; lower max frequency limits 10G+ use cases Prefer for cost-sensitive legacy designs where 350 MHz suffices and impedance tuning is handled externally
ISSI IS61WV102418B Asynchronous 18-Mbit SRAM, no DDR/QDR architecture, 15 ns access, single-port, 3.3 V only No concurrent read/write, no burst, no echo clocks-unsuitable for high-throughput streaming applications Only viable for low-bandwidth control-plane memory where latency determinism and throughput are non-critical

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1643KV18-400BZXC uniquely delivers 400 MHz DDR concurrency, on-die impedance tuning, and source-synchronous timing-making it the sole fit for 10G+ packet buffering where deterministic latency and signal integrity are mandatory.

Availability

CY7C1643KV18-400BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and real-time signal processing buffer applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1643KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1643KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking and telecom infrastructure where concurrent access and sub-cycle timing predictability are essential.

FAQ

What is the function of the DOFF pin on CY7C1643KV18-400BZXC?

The DOFF (PLL Disable) pin is an active-low input that controls the internal phase-locked loop. When pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency and supports up to 400 MHz operation. When pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and a maximum frequency of 167 MHz-enabling backward compatibility with legacy controllers.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of output driver impedance for Q[17:0], CQ, and CQ signals. This achieves 0.2 × RQ (e.g., ~48 Ω) output impedance, closely matching standard 50 Ω PCB traces-reducing reflections, improving eye diagram margins, and eliminating need for external series termination resistors.

Can CY7C1643KV18-400BZXC perform simultaneous read and write operations to the same memory location?

No. While the device supports fully concurrent read and write operations to *different* addresses (due to independent ports), writing to an address currently being read from results in undefined data on the Q[17:0] bus. The architecture ensures coherency only for sequential or non-overlapping accesses; overlapping read/write to identical locations violates the timing protocol and is not supported.

What is the role of QVLD in system-level timing design?

QVLD is a synchronous output asserted coincident with the first valid word of each four-word read burst and edge-aligned with CQ/CQ. It serves as a hardware-ready signal for downstream logic (e.g., FPGA state machines or deserializers), eliminating reliance on clock-cycle counting or complex delay-locked loops to identify valid data-thereby reducing timing uncertainty by up to 200 ps in 400 MHz systems.

CY7C1643KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1643KV18-400BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1643KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1643KV18-400BZXC reliable?

The price and inventory of CY7C1643KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1643KV18-400BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1643KV18-400BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1643KV18-400BZXC?

CY7C1643KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1643KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1643KV18-400BZXC?

For technical support, including CY7C1643KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1643KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C1643KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1643KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1643KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1643KV18-400BZXC?

All CY7C1643KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1643KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1643KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C1643KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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