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Cypress Semiconductor Corp CY7C1643KV18-450BZC

Part No.:
CY7C1643KV18-450BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1643KV18-450BZC.pdf
Description:
IC SRAM 144MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:142

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Product details

Overview

CY7C1643KV18 from Cypress Semiconductor is a 144-Mbit QDR® II+ SRAM with 8 M × 18 organization, 450 MHz clock frequency, 2.0-cycle read latency, and separate read/write DDR ports delivering 900 MT/s effective data rate. It operates at 1.8 V core and 1.4–1.8 V I/O supply, housed in a 165-ball FBGA (15 × 17 × 1.4 mm), and targets high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1643KV18 datasheet, CY7C1643KV18 pinout, CY7C1643KV18 application, or CY7C1643KV18 equivalent, key selection criteria include its four-word burst architecture, echo clock (CQ/CQ) timing support, QVLD data-valid signaling, DOFF-configurable PLL mode, and HSTL-compatible 18-bit bidirectional I/O interface.

Technical Context

The CY7C1643KV18 implements a synchronous pipelined QDR II+ architecture with physically independent read and write ports-each using DDR interfaces synchronized to complementary K/K clocks. Address latching occurs on alternating rising edges of K/K, enabling concurrent read and write transactions without bus turnaround.

It integrates an internal PLL for precise data placement, supports programmable output impedance via ZQ calibration, and provides byte-write select (BWS0/BWS1) for granular 9-bit writes. The device delivers full data coherency and operates in either 2.0-cycle latency (DOFF = HIGH) or QDR I–compatible 1-cycle latency (DOFF = LOW).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 144 Mbit (8 M × 18 organization)
Max Clock Frequency 450 MHz - enables 900 MT/s DDR throughput per port
Read Latency 2.0 clock cycles - deterministic timing for pipeline-aligned system design
Core Supply (VDD) 1.8 V ± 0.1 V - low-power operation compatible with advanced SoC voltage rails
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports both 1.5-V and 1.8-V HSTL-18 interfaces
Burst Length Four 18-bit words per access - reduces address bus toggling and simplifies controller logic
Package 165-ball FBGA (15 × 17 × 1.4 mm) - optimized for high-speed signal integrity and thermal dissipation

Pinout & Package

Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edges of K/K; supports 18-bit parallel writes
Q[17:0] Synchronous read data outputs DDR-driven on K/K rising edges; tri-stated when RPS inactive
RPS Read port select (active low) Enables read burst; sampled on K rising edge; controls Q[17:0] driver state
WPS Write port select (active low) Initiates write burst; sampled on K rising edge; gates D[17:0] acceptance
BWS0, BWS1 Byte write selects (active low) Enable 9-bit granularity: BWS0 → D[8:0], BWS1 → D[17:9]
K / K Complementary input clocks Provide DDR timing reference; K used for RPS/WPS/A sampling; both drive data transfers
CQ / CQ Echo clocks Free-running, phase-aligned copies of K/K for simplified high-speed data capture
QVLD Data validity indicator Edge-aligned with CQ/CQ; signals valid Q[17:0] data during read bursts
DOFF PLL disable control (active low) Switches device to QDR I mode (1-cycle latency, ≤167 MHz) when grounded
ZQ Output impedance calibration input Connects to external resistor to ground to tune CQ/CQ/Q[17:0] drive strength to 0.2×RQ

Key Features

Feature Design Value
Separate read/write DDR ports Eliminates data bus turnaround, enabling true concurrent read/write at full bandwidth
Four-word burst architecture Reduces address bus frequency by 4× versus single-word access, easing controller timing closure
Programmable output impedance (ZQ) Enables dynamic matching to PCB trace impedance without external termination resistors
QVLD data-valid strobe Provides unambiguous, edge-aligned indication of valid Q[17:0] data-critical for reliable DDR capture
DOFF-configurable latency mode Hardware-selectable 2.0-cycle (QDR II+) or 1-cycle (QDR I) operation-supports legacy and high-performance designs

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet/SONET frames in Layer 2/3 switching ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-in-first-out (FIFO) buffer with simultaneous ingress (write) and egress (read) paths.

Use Value: 900 MT/s DDR throughput per port ensures zero-latency frame queuing under 10 Gbps line rates.

Use Scenario: Capturing real-time waveform samples from multi-channel ADCs in automated test systems.

IC Role / Device Role / Timing Role: High-bandwidth memory buffer synchronizing acquisition and analysis engines via independent read/write clocks.

Use Value: Four-word burst and echo clocks (CQ/CQ) enable deterministic 450 MHz sampling-to-analysis latency alignment.

Telecom Baseband Processing Real-Time Video Frame Buffering

Use Scenario: Interfacing between digital front-end (DFE) and baseband processor in 4G/LTE radio units.

IC Role / Device Role / Timing Role: Shared memory resource for IQ sample exchange with strict jitter tolerance and sub-2-cycle latency.

Use Value: 2.0-cycle read latency and HSTL-18 I/O ensure stable operation across temperature and voltage variations in outdoor RF environments.

Use Scenario: Holding uncompressed 1080p60 YUV422 frames for real-time video analytics pipelines.

IC Role / Device Role / Timing Role: Dual-port frame buffer supporting concurrent camera ingestion (write) and GPU processing (read).

Use Value: 144 Mbit capacity stores two full frames; separate ports prevent read/write contention during motion estimation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 144-Mbit QDR II+ (8 M × 18), 1000 MHz DDR, 1.5-V VDDQ only, no ZQ calibration Higher max frequency but narrower I/O voltage range; lacks programmable impedance tuning Select when system requires >450 MHz operation and uses fixed 1.5-V I/O rails; verify echo clock timing compatibility
ISSI IS61WV102418BLL-15BLI 18-Mbit sync SRAM (512 K × 36), 15 ns async access, single port, 3.3-V only Lower density, asynchronous interface, no DDR or burst capability Consider only for cost-sensitive, non-concurrent, lower-bandwidth applications where QDR features are unnecessary

Compared with IDT72T36120L10BG and IS61WV102418BLL-15BLI, the CY7C1643KV18 uniquely balances 450 MHz DDR performance, flexible 1.4–1.8 V I/O, ZQ-calibrated outputs, and hardware-selectable latency-making it optimal for scalable, thermally constrained telecom and networking platforms.

Availability

CY7C1643KV18 is available at Aetrix Electronics and suitable for network switch buffering, high-speed test instrumentation, and telecom baseband processing requiring stable component supply, long-lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1643KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1643KV18 belongs to Cypress's QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in packet-forwarding and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1643KV18?

The DOFF (PLL Disable) pin is an active-low control that disables the internal phase-locked loop. When tied LOW, the device reverts to QDR I timing with 1-cycle read latency and maximum 167 MHz operation. When HIGH (or pulled up), it enables full QDR II+ mode at up to 450 MHz with 2.0-cycle latency. This pin allows hardware-mode selection without firmware intervention.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external resistor (RQ) to ground, enabling on-die calibration of CQ, CQ, and Q[17:0] output drivers to 0.2 × RQ impedance. This eliminates need for discrete series termination resistors and adapts drive strength to PCB trace impedance. Connecting ZQ directly to VDDQ sets minimum drive strength; floating or grounding ZQ is prohibited.

Can CY7C1643KV18 perform simultaneous read and write to the same address?

Yes-due to physically separate read and write ports and independent address latching on K/K rising edges, the CY7C1643KV18 supports true concurrent read and write operations to identical or overlapping addresses. Data coherency is maintained: a read returns the most recently written value, even if the write is still in progress within the pipeline.

What is the role of QVLD in system timing design?

QVLD is a synchronous, edge-aligned output that pulses high exactly when valid data appears on Q[17:0]. It is timed to align with CQ/CQ edges, providing a clean, jitter-tolerant strobe for capturing DDR output data. Unlike relying solely on clock edges, QVLD decouples data validity from clock skew-critical for robust setup/hold margin in high-speed FPGA or ASIC interfaces.

CY7C1643KV18-450BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
144Mbit
Memory Organization:
8M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY7C1643KV18-450BZC FAQ

1.How can I place an order for CY7C1643KV18-450BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1643KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1643KV18-450BZC reliable?

The price and inventory of CY7C1643KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1643KV18-450BZC is usually 5 days.

3.What payment methods are accepted for CY7C1643KV18-450BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1643KV18-450BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1643KV18-450BZC?

CY7C1643KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1643KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1643KV18-450BZC?

For technical support, including CY7C1643KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1643KV18-450BZC requirements.

6.How does Aetrix verify that CY7C1643KV18-450BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1643KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1643KV18-450BZC meets industry standards.

7.What is the process for return or replacement of CY7C1643KV18-450BZC?

All CY7C1643KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1643KV18-450BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1643KV18-450BZC part is unused and in its original packaging.

Return procedure for CY7C1643KV18-450BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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