Cypress Semiconductor Corp CY7C1665KV18-450BZXC
- Part No.:
- CY7C1665KV18-450BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1665KV18-450BZXC.pdf
- Description:
- IC SRAM 144MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:223
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Product details
Overview
CY7C1665KV18-450BZXC from Cypress Semiconductor is a 4-M × 36-bit, 144-Mbit QDR® II+ SRAM with 2.5-cycle read latency, 450 MHz clock operation (900 Mbps DDR data rate), HSTL I/O, and 165-ball FBGA (15 × 17 × 1.4 mm) package. It features independent read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and programmable impedance via ZQ pin for high-speed memory subsystems in networking switches and packet buffers.
For engineers reviewing the CY7C1665KV18-450BZXC datasheet, CY7C1665KV18-450BZXC pinout, CY7C1665KV18-450BZXC application, or CY7C1665KV18-450BZXC equivalent, key selection criteria include 450 MHz sustained clock frequency, 2.5-cycle read latency mode, ×36 data width, DOFF-controlled PLL enable/disable, and JTAG 1149.1 test access compliance.
Technical Context
The CY7C1665KV18 implements QDR II+ architecture with fully independent read and write ports sharing a multiplexed address bus. Read and write operations are synchronized to complementary K/K clocks, with data sampled on rising edges only - no bus turnaround required. The internal PLL enables precise 2.5-cycle read latency timing when DOFF is high.
Each transaction delivers four sequential 36-bit words per access, achieving 900 MB/s bandwidth at 450 MHz. Echo clocks CQ and CQ align with output data edges to simplify capture in FPGA-based systems. Byte write selects BWS[3:0] allow granular 9-bit byte masking without disturbing adjacent data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 144 Mbit (4 M × 36) |
| Max Clock Frequency | 450 MHz - determines maximum sustained throughput of 900 MB/s (DDR) |
| Read Latency | 2.5 cycles - fixed pipeline delay from RPS assertion to first valid Q[35:0] word |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports both 1.5-V and 1.8-V HSTL-15/18 interfaces |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines stable internal SRAM array operation voltage |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - fine-pitch, thermally enhanced, Pb-free |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 450 MHz |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 15 mm × 17 mm × 1.4 mm body, RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel input latched on rising edges of K/K; supports burst writes of four 36-bit words |
| Q[35:0] | Synchronous read data output | 36-bit parallel output driven on rising edges of K/K; aligned with CQ/CQ and QVLD |
| RPS | Read port select (active low) | Enables read burst; sampled on rising edge of K; tristates Q[35:0] when deasserted |
| WPS | Write port select (active low) | Enables write burst; sampled on rising edge of K; ignores D[35:0] when deasserted |
| BWS[3:0] | Byte write select (active low) | Four independent 9-bit masks: BWS0–BWS3 control D[8:0], D[17:9], D[26:18], D[35:27] |
| K / K | Differential clock inputs | Complementary clocks - all synchronous signals referenced to rising edges only |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K for simplified high-speed data capture |
| QVLD | Data validity indicator | Asserted coincident with first valid Q[35:0] word in burst; edge-aligned with CQ/CQ |
| DOFF | PLL disable control (active low) | Disables internal PLL to revert to QDR I mode (1-cycle latency, ≤167 MHz max) |
| ZQ | Output impedance calibration | Connect to external resistor to ground to tune CQ/CQ/Q[35:0] drive strength to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround, enabling concurrent read+write in same cycle - critical for full-duplex packet buffering |
| Four-word burst architecture | Reduces effective address bus frequency by 4× - cuts address routing complexity and skew in high-speed PCB layouts |
| 2.5-cycle read latency with PLL | Guaranteed deterministic timing window for FPGA logic alignment; enables tight setup/hold margins at 450 MHz |
| HSTL I/O with programmable drive | ZQ-calibrated outputs match 50 Ω trace impedance - minimizes reflections and jitter on >10 cm memory buses |
| JTAG 1149.1 boundary scan | Enables production-level interconnect testing and in-system debug without additional probe points |
Applications
| High-Speed Packet Buffering | Network Switch Lookup Tables |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE ingress/egress traffic in modular Ethernet switches. IC Role / Device Role / Timing Role: Dual-port SRAM serving as temporary storage between ingress parser and egress scheduler, operating at 450 MHz with zero bus contention. Use Value: Concurrent read/write allows simultaneous packet enqueue/dequeue, sustaining 900 MB/s throughput without arbitration stalls. |
Use Scenario: Storing forwarding database entries (FIB/LPM tables) in Layer 3 routing ASICs. IC Role / Device Role / Timing Role: High-bandwidth lookup engine memory, interfaced directly to TCAM result processors for sub-10 ns access. Use Value: 2.5-cycle latency and echo clocks enable deterministic timing closure in FPGA-based search engines. |
| Baseband Signal Processing | Test Equipment Pattern Memory |
|
Use Scenario: Real-time frame buffering in LTE/5G baseband units handling multi-carrier OFDM symbol streams. IC Role / Device Role / Timing Role: Synchronous dual-port memory staging IQ samples between FFT and channel estimation blocks. Use Value: Independent ports prevent read/write collisions during bursty symbol processing; HSTL I/O ensures clean sampling at 450 MHz. |
Use Scenario: Storing stimulus/response patterns in high-speed automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Deterministic-access pattern store synchronized to ATE timing controller via K/K and QVLD. Use Value: QVLD and echo clocks eliminate setup/hold uncertainty, enabling reliable 450 MHz pattern replay accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C361624A-450BIN | 4-M × 36, 450 MHz, but uses SSTL-15 I/O and lacks echo clocks (CQ/CQ) and QVLD | Requires external strobe generation; less suitable for FPGA-based systems needing built-in timing aids | Select when SSTL interface compatibility is required and board-level strobe routing is feasible |
| IS42S32800J-45BLI | SDRAM-based, 32M × 32, 450 MHz effective, but asynchronous command interface and 12–15 ns latency | Higher latency and command scheduling overhead; not suitable for deterministic real-time buffering | Select only for cost-sensitive applications where latency tolerance exceeds 10 ns and burst predictability is low |
Compared with AS7C361624A-450BIN and IS42S32800J-45BLI, CY7C1665KV18-450BZXC provides guaranteed 2.5-cycle latency, integrated echo clocks, and QVLD - essential for FPGA-based systems requiring deterministic timing and minimal PCB routing complexity.
Availability
CY7C1665KV18-450BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch lookup tables, baseband signal processing, and ATE pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C1665KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with focus on signal integrity and timing precision.
CY7C1665KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed communications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C1665KV18-450BZXC?
The DOFF pin disables the internal PLL when pulled low. In this state, the device operates in QDR I mode with 1-cycle read latency and a maximum clock frequency of 167 MHz. When DOFF is high (default), the PLL enables 2.5-cycle latency operation at up to 450 MHz. Pull-up resistors ≤10 kΩ are recommended for normal use.
How does the ZQ pin affect output drive strength?
ZQ calibrates the output impedance of Q[35:0], CQ, and CQ pins to 0.2 × RQ, where RQ is an external resistor tied between ZQ and ground. This matches typical 50 Ω PCB traces. Connecting ZQ directly to VDDQ enables minimum impedance mode. ZQ must never be left floating or tied to ground.
Can CY7C1665KV18-450BZXC perform simultaneous read and write to the same address?
No. While read and write ports operate concurrently, the device guarantees data coherency by ensuring that a write to an address completes before a subsequent read returns the updated value. Internal arbitration prevents conflicting access - reads return the most recently written data, preserving consistency without external logic.
What is the role of BWS[3:0] in byte-write operations?
BWS[3:0] are active-low byte write enables controlling four independent 9-bit segments of the 36-bit data bus. BWS0 affects D[8:0], BWS1 affects D[17:9], BWS2 affects D[26:18], and BWS3 affects D[35:27]. Deasserting any BWS leaves its corresponding byte unchanged during the write burst.
CY7C1665KV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 144Mbit
- Memory Organization:
- 4M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1665KV18-450BZXC FAQ
1.How can I place an order for CY7C1665KV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1665KV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1665KV18-450BZXC reliable?
The price and inventory of CY7C1665KV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1665KV18-450BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1665KV18-450BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1665KV18-450BZXC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1665KV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1665KV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1665KV18-450BZXC?
For technical support, including CY7C1665KV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1665KV18-450BZXC requirements.
6.How does Aetrix verify that CY7C1665KV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1665KV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1665KV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1665KV18-450BZXC?
All CY7C1665KV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1665KV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1665KV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C1665KV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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