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Cypress Semiconductor Corp CY7C1911KV18-250BZC

Part No.:
CY7C1911KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1911KV18-250BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:150

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Product details

Overview

CY7C1911KV18-250BZC from Cypress Semiconductor is a 2-Mbit × 9 (18-Mbit total) QDR® II SRAM with separate read/write ports, 250 MHz operation (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent high-bandwidth memory access for network packet buffering in telecom line cards.

For engineers reviewing the CY7C1911KV18-250BZC datasheet, CY7C1911KV18-250BZC pinout, CY7C1911KV18-250BZC application, or CY7C1911KV18-250BZC equivalent, key selection criteria include four-word burst timing, echo clock (CQ/CQ) support for DDR data capture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements true dual-port synchronous pipelined architecture: independent K/K clocks drive write address/data latching, while C/C clocks control output register timing. Read and write operations are fully decoupled-no bus turnaround required-and each transaction bursts four 9-bit words per access.

The device uses on-chip PLL for precise data-eye placement and supports both single-clock (K = C) and dual-clock (K ≠ C) modes. DOFF pin selects between QDR I–compatible 1-cycle latency (DOFF = LOW) and optimized QDR II 1.5-cycle latency (DOFF = HIGH), directly affecting system timing margin in backplane interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density2 M × 9 = 18 Mbit; enables compact 9-bit aligned packet header storage without padding overhead
Max Clock Frequency250 MHz (40 ns period); defines maximum sustained throughput of 900 MB/s (4 × 9-bit × 250 MHz)
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum read-to-read interval in pipeline
Core SupplyVDD = 1.8 V ±0.1 V; requires tight-regulated low-noise 1.8 V rail to maintain timing stability
I/O Supply RangeVDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V logic families
Burst LengthFour-word fixed burst; reduces address bus toggling frequency by 4× versus single-word access
Package165-ball FBGA (13 mm × 15 mm × 1.4 mm); supports high-density routing with controlled impedance trace design

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[8:0]Synchronous write data input9-bit parallel data sampled on rising edge of K clock; full-width write path for 9-bit word alignment
Q[8:0]Synchronous read data output9-bit parallel output registered to C/C clock edges; supports source-synchronous DDR capture via CQ
WPSWrite port selectActive-low signal enabling write transactions; deassertion blocks all D[8:0] sampling regardless of clock
BWS0Byte write selectActive-low control for entire 9-bit word; assertion enables full-word write, not partial-byte masking
DOFFRead latency mode selectHIGH → 1.5-cycle latency (QDR II mode); LOW → 1-cycle latency (QDR I compatibility)
CQ / CQEcho clocksSource-synchronous output clocks paired with Q[8:0]; simplify high-speed data capture at receiver
K / KInput clocksRising-edge-triggered clocks for address and write data latching; K used for address, K for data in dual-clock mode
C / COutput clocksRising-edge-triggered clocks driving Q[8:0] registers; matched to CQ for timing closure
A[18:0]Multiplexed address bus19-bit shared address for both read/write ports; latched on alternate K edges for burst addressing
VDDQI/O power supplySeparate 1.4–1.8 V rail for output drivers and input receivers; isolates I/O noise from core logic

Key Features

FeatureDesign Value
Independent read/write portsEliminates bus turnaround delay-enables simultaneous read and write in same clock cycle for full-duplex packet processing
Four-word burst architectureReduces effective address bus frequency by 4×, easing timing closure on wide-bus interconnects
Echo clock (CQ/CQ) supportProvides deterministic source-synchronous timing reference for FPGA/ASIC data capture at 500+ Mbps per pin
Configurable read latency (DOFF)Enables migration path from legacy QDR I designs (1-cycle) while supporting newer QDR II timing budgets (1.5-cycle)
JTAG 1149.1 boundary scanSupports production test and board-level debug without requiring additional test fixtures or probe points

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing incoming/outgoing Ethernet frames in a Layer 2 switch ASIC with real-time forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-in-first-out (FIFO) buffer between ingress parser and egress scheduler, operating at 250 MHz with zero turnaround latency.

Use Value: Concurrent read/write capability allows frame header inspection and payload forwarding in same cycle, reducing average packet latency by 35% versus single-port alternatives.

Use Scenario: Holding ATM cell headers and control metadata in OC-192 SONET line interface modules.

IC Role / Device Role / Timing Role: High-speed memory for cell-based traffic shaping and priority queuing, synchronized to line-rate clock domain via C/C and CQ signals.

Use Value: Echo clock alignment ensures reliable 500 Mbps DDR data capture in FPGA fabric, eliminating setup/hold violations seen with system-synchronous schemes.

Backplane Interconnect CacheHigh-Speed Test Equipment Memory

Use Scenario: Acting as shared scratchpad memory between multiple DSP cores in a multi-processor baseband unit.

IC Role / Device Role / Timing Role: Coherent dual-port SRAM providing atomic read-modify-write access to shared control structures across processors.

Use Value: Full data coherency guarantees most recent write is always returned on read-critical for lock-free synchronization without software overhead.

Use Scenario: Capturing high-resolution waveform samples in automated test equipment with >200 MS/s sampling rate.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer feeding ADC data into FPGA-based pattern analysis engine.

Use Value: Four-word burst reduces address generation logic complexity and enables deterministic 250 MHz capture window timing, improving measurement repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10PF36-bit × 512K configuration; 10 ns access time; 1.5 V core; no DOFF latency selectionTargeted at wider-data-width systems (e.g., 36-bit bus architectures); lacks configurable latency modeChoose when system requires native 36-bit interface and fixed 1-cycle latency suffices
ISSI IS61QW25618A-250BQI256K × 18 organization; 250 MHz; 1.8 V core; supports only 1.5-cycle latency (no DOFF)Smaller density (4.5 Mbit); suited for cost-sensitive mid-bandwidth applications where full 18-Mbit is unnecessaryChoose when footprint and BOM cost are prioritized over maximum bandwidth and latency flexibility

Compared with IDT72T3615L10PF and IS61QW25618A-250BQI, CY7C1911KV18-250BZC uniquely offers 2M × 9 density with selectable read latency and echo clock support-making it optimal for 9-bit-aligned telecom control plane buffers requiring timing adaptability.

Availability

CY7C1911KV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, backplane interconnect cache, and high-speed test equipment requiring stable component supply across extended production lifecycles.

Supply support for CY7C1911KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1911KV18 belongs to the QDR® II SRAM product line, engineered specifically for ultra-low-latency, concurrent-access memory subsystems in packet-switched infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1911KV18-250BZC?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted HIGH, it enables QDR II's 1.5-cycle latency for improved timing margin in high-frequency designs; when LOW, it reverts to QDR I–compatible 1-cycle latency for backward compatibility. This setting directly affects the number of clock cycles between address assertion and valid Q[8:0] output.

How does the echo clock (CQ) improve system timing?

CQ and CQ are source-synchronous copies of C and C clocks, routed alongside Q[8:0] signals. They provide a local timing reference at the receiver, eliminating skew between clock and data paths. This allows FPGA or ASIC input registers to capture Q[8:0] reliably at 500 Mbps per pin without complex deskew circuitry or dynamic phase alignment.

Can CY7C1911KV18-250BZC operate with 1.5 V I/O supply?

Yes-VDDQ supports 1.4 V to 1.8 V, including 1.5 V nominal. The device's HSTL-compatible output drivers and input receivers are fully specified across this range. Using 1.5 V VDDQ reduces I/O power consumption by ~25% versus 1.8 V while maintaining signal integrity on properly terminated lines.

Is JTAG boundary scan supported on CY7C1911KV18-250BZC?

Yes-the device implements IEEE 1149.1 JTAG test access port with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and device identification. JTAG can be disabled via fuse or strap option if unused, reducing pin count and simplifying layout.

CY7C1911KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
2M x 9
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1911KV18-250BZC FAQ

1.How can I place an order for CY7C1911KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1911KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1911KV18-250BZC reliable?

The price and inventory of CY7C1911KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1911KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1911KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1911KV18-250BZC transactions.

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CY7C1911KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1911KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1911KV18-250BZC?

For technical support, including CY7C1911KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1911KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1911KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1911KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1911KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1911KV18-250BZC?

All CY7C1911KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1911KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1911KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1911KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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