Cypress Semiconductor Corp CY7C2163KV18-550BZXI

Overview

CY7C2163KV18-550BZXI from Infineon Technologies (formerly Cypress) is a 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It delivers 1100 MT/s data rate via DDR interfaces on independent read/write ports, operates at 550 MHz clock frequency with 1.8 V core supply and 1.4–1.8 V I/O supply, and is packaged in a 165-ball FBGA (13 × 15 × 1.4 mm) for high-speed networking and packet buffering applications.

For engineers reviewing the CY7C2163KV18-550BZXI datasheet, CY7C2163KV18-550BZXI pinout, CY7C2163KV18-550BZXI application, or CY7C2163KV18-550BZXI equivalent, this page provides verified technical context, pin-level circuit roles, real-world use scenarios in telecom infrastructure, and validated alternative parts with documented functional trade-offs.

Technical Context

The device implements a synchronous pipelined architecture with fully independent read and write ports sharing a multiplexed address bus. Each port uses DDR signaling synchronized to separate K and K clocks-both rising edges drive data transfers, enabling concurrent read/write operations without bus turnaround.

It integrates a phase-locked loop (PLL) for precise data placement, echo clocks (CQ/CQ) for simplified high-speed capture, and programmable ODT on D[17:0], BWS[1:0], and K/K inputs. The DOFF pin selects between 2.5-cycle (HIGH) and 1-cycle (LOW) read latency modes, preserving backward compatibility with QDR I systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Compared with CY7C2163KV18-550BZXI, the -450 variant trades 22% bandwidth for lower power and cost, while AS7C3256B-15JCIN lacks QDR architecture entirely-requiring redesign of timing control, bus arbitration, and PCB layout to accommodate asynchronous operation and SOJ packaging.

Availability

CY7C2163KV18-550BZXI is available at Aetrix Electronics and suitable for telecom infrastructure, network processor subsystems, and high-speed test equipment requiring stable component supply, long-lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C2163KV18-550BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR® II+ SRAM portfolio originally developed by Cypress.

This device belongs to Infineon's high-performance memory product line targeting deterministic-latency, high-bandwidth applications in networking, wireless infrastructure, and test instrumentation-designed specifically for systems demanding concurrent access and sub-3-cycle read response.

FAQ

What is the function of the DOFF pin on CY7C2163KV18-550BZXI?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency per QDR II+ specification; when LOW, it reverts to 1-cycle latency compatible with QDR I devices. This is a static configuration set at power-up and affects internal pipeline staging but does not alter pin timing or voltage requirements.

Can CY7C2163KV18-550BZXI operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), explicitly including 1.5 V operation. HSTL Class I output drivers are characterized across this range, and DC/AC electrical parameters-including setup/hold times and ODT resistance-are guaranteed at 1.5 V per datasheet Rev. *K Section "Electrical Characteristics".

How is on-die termination (ODT) configured on this SRAM?

ODT is enabled by pulling the ODT pin HIGH or LOW during power-up initialization. A HIGH selects high-range termination (RQ/1.66) for ZQ resistor values 175–250 Ω; LOW selects low-range (RQ/3.33) for 175–350 Ω. The ZQ pin connects to an external precision resistor that calibrates output driver impedance to 0.2 × RQ for Q[17:0], CQ, and CQ.

Is CY7C2163KV18-550BZXI pin-compatible with CY7C2165KV18-550BZXI?

No. Although both are QDR II+ SRAMs with same clocking and control logic, CY7C2163KV18-550BZXI (1M × 18) and CY7C2165KV18-550BZXI (512K × 36) have different ball counts, pin assignments, and data bus widths. The 165-ball FBGA for CY7C2163KV18 does not map to the 165-ball FBGA for CY7C2165KV18-address, data, and byte-select pins occupy distinct locations per datasheet Figure 1.