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Cypress Semiconductor Corp CY7C2262XV18-450BZXC

Part No.:
CY7C2262XV18-450BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2262XV18-450BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:180

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Product details

Overview

CY7C2262XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 450 MHz clock operation, 2.5-cycle read latency, and on-die termination (ODT). It implements a two-word burst architecture delivering 900 MT/s data rate via DDR interfaces on both ports, and operates at 1.8 V core / 1.5 V I/O supply in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C2262XV18 datasheet, CY7C2262XV18 pinout, CY7C2262XV18 application, or CY7C2262XV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL-compatible I/O, and FBGA-165 package compatibility for high-speed memory subsystems.

Technical Context

This SRAM uses synchronous pipelined architecture with independent K and K clocks driving separate read and write paths - all inputs sampled on rising edges, outputs edge-aligned to CQ/CQ. The device supports depth expansion via RPS/WPS port selects and implements on-chip self-timed writes with full data coherency across both ports.

Its PLL ensures precise data placement relative to echo clocks, while ODT applies programmable termination (175–350 Ω range) to D[17:0], BWS[1:0], and K/K inputs. DOFF pin configures read latency between 2.5 cycles (HIGH) and 1 cycle (LOW), enabling interoperability with legacy QDR-I systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 organization)
Max Clock Frequency 450 MHz - enables 900 MT/s DDR throughput per port
Read Latency 2.5 cycles (DOFF = HIGH) - optimized for high-throughput burst reads
Core Supply Voltage 1.8 V ± 0.1 V - low-power, noise-immune core operation
I/O Supply Range 1.4 V to 1.6 V - supports 1.5 V HSTL interface compliance
On-Die Termination Configurable for D[17:0], BWS[1:0], K/K - eliminates external resistors and routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous data input Sampled on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous data output Drives valid data aligned to CQ/CQ; tristated when RPS deasserted
RPS / WPS Port select control Active-low enables independent read/write port activation for depth expansion
K / K Dual-phase clock inputs Rising edges latch all synchronous inputs; K drives read path, K drives write path
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K - simplify high-speed data capture timing
QVLD Data validity indicator Asserted synchronously with CQ/CQ to signal valid Q[17:0] output window
ODT ODT range select Configures termination resistance (RQ/3.33 or RQ/1.66) during power-up initialization

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent transactions without bus turnaround delays
Two-word burst architecture Reduces address bus frequency by 2× versus single-word access schemes
On-die termination (ODT) Eliminates 36 external termination resistors for D[17:0], BWS[1:0], and K/K
Programmable read latency DOFF pin selects 2.5-cycle (QDR II+) or 1-cycle (QDR I) mode for system compatibility
HSTL I/O with variable drive Meets JEDEC HSTL Class I specifications; supports impedance-matched signaling up to 450 MHz

Applications

High-Speed Packet Buffering Network Switch Fabric Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in line-rate switching ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress buffer with zero-turnaround concurrent access.

Use Value: 900 MT/s DDR bandwidth per port sustains 10 Gbps+ line rates; QVLD and echo clocks ensure reliable data capture at 450 MHz.

Use Scenario: Shared memory for crossbar arbitration and header lookup in multi-gigabit switch fabrics.

IC Role / Device Role / Timing Role: Low-latency, coherent memory node supporting simultaneous read-modify-write operations.

Use Value: Full data coherency and 2.5-cycle latency enable deterministic pipeline timing; ODT simplifies PCB layout for dense fabric interconnects.

Telecom Line Card Buffering Test Equipment Pattern Memory

Use Scenario: Real-time buffering of SONET/OTN frame payloads in optical transport line cards.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with SerDes PHYs via HSTL I/O and echo-clock-synchronized capture.

Use Value: 1.5 V I/O supply matches SerDes voltage domains; CQ/CQ alignment reduces setup/hold margin requirements.

Use Scenario: High-fidelity stimulus/response storage in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Deterministic, low-jitter memory for generating precise digital test vectors at 450 MHz clock rate.

Use Value: PLL-controlled data placement and QVLD assertion guarantee sub-cycle timing accuracy for critical test sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR II+, 333 MHz max, no ODT, 1.8 V only, 165-ball FBGA Lacks ODT and echo clocks; requires external termination and tighter board-level timing control Preferred where cost sensitivity outweighs signal integrity complexity and lower speed suffices
AS7C33618B-15JIN 36-Mbit sync SRAM, 150 MHz, single-port, CMOS I/O, 100-pin TQFP No DDR, no dual-port concurrency, no echo clocks or ODT; significantly lower bandwidth Only suitable for non-real-time buffering where latency and throughput are not critical

Compared with IDT72T3615L10BG and AS7C33618B-15JIN, CY7C2262XV18 delivers 35% higher bandwidth, eliminates 36 external terminators via ODT, and provides echo clocks for simplified high-speed capture - making it uniquely suited for 10G+ networking and test equipment requiring deterministic timing.

Availability

CY7C2262XV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C2262XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, for demanding infrastructure applications.

This device belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in networking, telecommunications, and test instrumentation.

FAQ

What is the function of the DOFF pin on CY7C2262XV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with QDR I systems. This pin is sampled during power-up initialization and remains static during normal operation.

How does On-Die Termination (ODT) work on this SRAM?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor. The ODT pin selects between two ranges: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω); floating defaults to HIGH range. No external resistors are needed.

Can CY7C2262XV18 be used in depth-expanded configurations?

Yes - RPS (Read Port Select) and WPS (Write Port Select) pins allow independent activation of each port. Multiple devices can be stacked using these signals to increase memory depth while maintaining concurrent read/write capability across the bank.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned output clocks synchronized to K and K respectively. They provide timing references for external logic to sample Q[17:0] data reliably, eliminating the need for complex delay-locked loops or manual skew compensation in high-speed capture circuits.

CY7C2262XV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2262XV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2262XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C2262XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2262XV18-450BZXC is usually 5 days.

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5.How can I obtain technical support or documentation for CY7C2262XV18-450BZXC?

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6.How does Aetrix verify that CY7C2262XV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2262XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2262XV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2262XV18-450BZXC?

All CY7C2262XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2262XV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2262XV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C2262XV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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