Cypress Semiconductor Corp CY7C2262XV18-450BZXC
- Part No.:
- CY7C2262XV18-450BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2262XV18-450BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:180
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Product details
Overview
CY7C2262XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with separate read/write ports, 450 MHz clock operation, 2.5-cycle read latency, and on-die termination (ODT). It implements a two-word burst architecture delivering 900 MT/s data rate via DDR interfaces on both ports, and operates at 1.8 V core / 1.5 V I/O supply in high-bandwidth networking and packet buffering applications.
For engineers reviewing the CY7C2262XV18 datasheet, CY7C2262XV18 pinout, CY7C2262XV18 application, or CY7C2262XV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) timing support, QVLD data validity signaling, HSTL-compatible I/O, and FBGA-165 package compatibility for high-speed memory subsystems.
Technical Context
This SRAM uses synchronous pipelined architecture with independent K and K clocks driving separate read and write paths - all inputs sampled on rising edges, outputs edge-aligned to CQ/CQ. The device supports depth expansion via RPS/WPS port selects and implements on-chip self-timed writes with full data coherency across both ports.
Its PLL ensures precise data placement relative to echo clocks, while ODT applies programmable termination (175–350 Ω range) to D[17:0], BWS[1:0], and K/K inputs. DOFF pin configures read latency between 2.5 cycles (HIGH) and 1 cycle (LOW), enabling interoperability with legacy QDR-I systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR throughput per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - optimized for high-throughput burst reads |
| Core Supply Voltage | 1.8 V ± 0.1 V - low-power, noise-immune core operation |
| I/O Supply Range | 1.4 V to 1.6 V - supports 1.5 V HSTL interface compliance |
| On-Die Termination | Configurable for D[17:0], BWS[1:0], K/K - eliminates external resistors and routing complexity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous data input | Sampled on rising edges of K/K; supports byte-write via BWS0/BWS1 |
| Q[17:0] | Synchronous data output | Drives valid data aligned to CQ/CQ; tristated when RPS deasserted |
| RPS / WPS | Port select control | Active-low enables independent read/write port activation for depth expansion |
| K / K | Dual-phase clock inputs | Rising edges latch all synchronous inputs; K drives read path, K drives write path |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K - simplify high-speed data capture timing |
| QVLD | Data validity indicator | Asserted synchronously with CQ/CQ to signal valid Q[17:0] output window |
| ODT | ODT range select | Configures termination resistance (RQ/3.33 or RQ/1.66) during power-up initialization |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent transactions without bus turnaround delays |
| Two-word burst architecture | Reduces address bus frequency by 2× versus single-word access schemes |
| On-die termination (ODT) | Eliminates 36 external termination resistors for D[17:0], BWS[1:0], and K/K |
| Programmable read latency | DOFF pin selects 2.5-cycle (QDR II+) or 1-cycle (QDR I) mode for system compatibility |
| HSTL I/O with variable drive | Meets JEDEC HSTL Class I specifications; supports impedance-matched signaling up to 450 MHz |
Applications
| High-Speed Packet Buffering | Network Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in line-rate switching ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress buffer with zero-turnaround concurrent access. Use Value: 900 MT/s DDR bandwidth per port sustains 10 Gbps+ line rates; QVLD and echo clocks ensure reliable data capture at 450 MHz. |
Use Scenario: Shared memory for crossbar arbitration and header lookup in multi-gigabit switch fabrics. IC Role / Device Role / Timing Role: Low-latency, coherent memory node supporting simultaneous read-modify-write operations. Use Value: Full data coherency and 2.5-cycle latency enable deterministic pipeline timing; ODT simplifies PCB layout for dense fabric interconnects. |
| Telecom Line Card Buffering | Test Equipment Pattern Memory |
|
Use Scenario: Real-time buffering of SONET/OTN frame payloads in optical transport line cards. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing with SerDes PHYs via HSTL I/O and echo-clock-synchronized capture. Use Value: 1.5 V I/O supply matches SerDes voltage domains; CQ/CQ alignment reduces setup/hold margin requirements. |
Use Scenario: High-fidelity stimulus/response storage in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic, low-jitter memory for generating precise digital test vectors at 450 MHz clock rate. Use Value: PLL-controlled data placement and QVLD assertion guarantee sub-cycle timing accuracy for critical test sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 333 MHz max, no ODT, 1.8 V only, 165-ball FBGA | Lacks ODT and echo clocks; requires external termination and tighter board-level timing control | Preferred where cost sensitivity outweighs signal integrity complexity and lower speed suffices |
| AS7C33618B-15JIN | 36-Mbit sync SRAM, 150 MHz, single-port, CMOS I/O, 100-pin TQFP | No DDR, no dual-port concurrency, no echo clocks or ODT; significantly lower bandwidth | Only suitable for non-real-time buffering where latency and throughput are not critical |
Compared with IDT72T3615L10BG and AS7C33618B-15JIN, CY7C2262XV18 delivers 35% higher bandwidth, eliminates 36 external terminators via ODT, and provides echo clocks for simplified high-speed capture - making it uniquely suited for 10G+ networking and test equipment requiring deterministic timing.
Availability
CY7C2262XV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, and telecom line card applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for CY7C2262XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including QDR SRAMs, for demanding infrastructure applications.
This device belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in networking, telecommunications, and test instrumentation.
FAQ
What is the function of the DOFF pin on CY7C2262XV18?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency for QDR II+ operation; when LOW, it reverts to 1-cycle latency compatible with QDR I systems. This pin is sampled during power-up initialization and remains static during normal operation.
How does On-Die Termination (ODT) work on this SRAM?
ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor. The ODT pin selects between two ranges: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω); floating defaults to HIGH range. No external resistors are needed.
Can CY7C2262XV18 be used in depth-expanded configurations?
Yes - RPS (Read Port Select) and WPS (Write Port Select) pins allow independent activation of each port. Multiple devices can be stacked using these signals to increase memory depth while maintaining concurrent read/write capability across the bank.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned output clocks synchronized to K and K respectively. They provide timing references for external logic to sample Q[17:0] data reliably, eliminating the need for complex delay-locked loops or manual skew compensation in high-speed capture circuits.
CY7C2262XV18-450BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2262XV18-450BZXC FAQ
1.How can I place an order for CY7C2262XV18-450BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2262XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2262XV18-450BZXC reliable?
The price and inventory of CY7C2262XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2262XV18-450BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2262XV18-450BZXC?
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Once your CY7C2262XV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2262XV18-450BZXC?
For technical support, including CY7C2262XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2262XV18-450BZXC requirements.
6.How does Aetrix verify that CY7C2262XV18-450BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2262XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2262XV18-450BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2262XV18-450BZXC?
All CY7C2262XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2262XV18-450BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2262XV18-450BZXC part is unused and in its original packaging.
Return procedure for CY7C2262XV18-450BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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