Cypress Semiconductor Corp CY7C2263XV18-600BZXC
- Part No.:
- CY7C2263XV18-600BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2263XV18-600BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:156
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Product details
Overview
CY7C2263XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 2 M × 18 organization, 600 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It implements separate read/write DDR ports for concurrent high-bandwidth memory access in networking packet buffers and FPGA co-processor caches.
For engineers reviewing the CY7C2263XV18 datasheet, CY7C2263XV18 pinout, CY7C2263XV18 application, or CY7C2263XV18 equivalent, key selection criteria include its 1266 MT/s effective data rate, HSTL I/O compatibility, 165-ball FBGA package, DOFF-configurable latency mode, and echo-clock–assisted timing closure in 10G+ switch fabric designs.
Technical Context
This SRAM uses synchronous pipelined architecture with independent read and write ports, each operating at DDR rates on dedicated K/K clocks. Address latching occurs on alternating rising edges of K and K, enabling four-word burst transfers per access without bus turnaround.
The device integrates a PLL for precise data placement, supports ODT on D[17:0], BWS[1:0], and K/K inputs, and provides QVLD-synchronized valid-data indication. Its 1.8 V core supply and 1.4–1.6 V I/O supply enable low-power, high-speed operation compatible with modern FPGA and ASIC memory interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 organization) |
| Max Clock Frequency | 600 MHz - determines maximum sustained bandwidth of 1266 MT/s per port |
| Read Latency | 2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-constrained systems |
| I/O Voltage Range | VDDQ = 1.4 V to 1.6 V - matches 1.5 V HSTL Class I/II interface standards |
| Core Supply | VDD = 1.8 V ± 0.1 V - defines power integrity requirements and noise margin |
| On-Die Termination | Supported on D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors, reducing PCB area and signal reflections |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing in telecom line cards |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1 |
| Q[17:0] | Synchronous read data output | 18-bit DDR output aligned to CQ/CQ; tri-stated when RPS is deasserted |
| RPS / WPS | Read/Write port select | Active-low control signals sampled on K rising edge; enable independent port activation |
| BWS[1:0] | Byte write select | Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); preserve unselected bytes during partial writes |
| K / K | Differential clock inputs | Rising-edge–triggered clocks for all synchronous operations; K used for address/data capture, K for echo-clock generation |
| CQ / CQ | DDR echo clocks | Free-running outputs synchronized to K/K; provide timing reference for latch alignment in high-speed receivers |
| QVLD | Valid data indicator | Output pulse edge-aligned with CQ/CQ; signals presence of valid Q[17:0] data for receiver sampling |
| ODT | On-die termination control | Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ resistor value; floating defaults to high range |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces address bus toggling by 75% versus single-word access, lowering system EMI and routing complexity |
| Separate read/write DDR ports | Enables true concurrent read and write operations without bus contention or turnaround delay |
| Configurable 1-cycle / 2.5-cycle latency | DOFF pin selects between QDR I–compatible (LOW) and QDR II+–optimized (HIGH) timing modes |
| HSTL Class I/II I/O buffers | Ensures signal integrity at 1266 MT/s with programmable drive strength and on-die termination |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system programming without requiring additional debug hardware |
Applications
| 10G Ethernet Line Cards | FPGA-Based Protocol Accelerators |
|---|---|
|
Use Scenario: Storing and forwarding variable-length packet headers and metadata in multi-port 10G switch ASICs. IC Role / Device Role / Timing Role: High-throughput, low-latency shared buffer between ingress parser and egress scheduler logic. Use Value: 1266 MT/s DDR throughput per port sustains full line-rate packet buffering with zero wait states under bursty traffic loads. |
Use Scenario: Acting as instruction/data cache for soft-core processors embedded in Xilinx UltraScale+ FPGAs performing TLS offload. IC Role / Device Role / Timing Role: Synchronous dual-port SRAM interfacing directly to AXI4-Stream and AXI4-Lite buses with deterministic 2.5-cycle read response. Use Value: Independent read/write ports eliminate arbitration overhead, enabling simultaneous fetch and store during crypto pipeline execution. |
| Optical Transport Network (OTN) Framers | High-Frequency Trading (HFT) Engine Buffers |
|
Use Scenario: Buffering G.709 OTU4 frame overhead and payload segments in real-time framer/de-framer ICs. IC Role / Device Role / Timing Role: Burst-access memory supporting 4-word interleaved reads aligned to 4-byte OTN byte boundaries. Use Value: Four-word burst reduces address bus frequency by 4×, easing timing closure on 600 MHz clock domains while preserving full 36-Mbit capacity. |
Use Scenario: Holding order book snapshots and market depth updates for sub-microsecond latency matching engines. IC Role / Device Role / Timing Role: Deterministic-latency memory accessed by custom ASICs with tightly coupled read/write pipelines. Use Value: 2.5-cycle read latency and QVLD-synchronized output enable cycle-accurate data capture without FIFO staging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2265XV18 | 1 M × 36 configuration, 18 address pins, BWS[3:0]; same 600 MHz speed and ODT support | Preferred for 36-bit wide bus architectures (e.g., 32-bit + parity, or native 36-bit datapaths) | Select when system bus width matches 36-bit granularity and depth requirement is ≥1 M words |
| AS7C336000B-600BIN | 36-Mbit QDR II+ SRAM, 2 M × 18, but lacks echo clocks (CQ/CQ) and QVLD; uses SSTL instead of HSTL | Requires external timing compensation and higher termination complexity in >500 MHz designs | Consider only if echo-clock–free board layout simplifies routing and SSTL-compatible controllers are used |
Compared with CY7C2263XV18, CY7C2265XV18 offers identical performance in a wider, shallower configuration ideal for 36-bit buses, while AS7C336000B-600BIN trades timing assist features for lower cost in less demanding signal-integrity environments.
Availability
CY7C2263XV18 is available at Aetrix Electronics and suitable for 10G Ethernet line cards, FPGA-based protocol accelerators, optical transport network framers, and high-frequency trading engine buffers requiring stable component supply across multi-year production cycles.
Supply support for CY7C2263XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical support, and long-term supply commitment for the QDR® II+ Xtreme SRAM portfolio.
This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in wireline communications infrastructure and real-time embedded processing systems.
FAQ
What is the function of the DOFF pin on CY7C2263XV18?
The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency optimized for QDR II+ timing; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I systems. This pin is sampled at power-up and remains static during operation, allowing system-level timing flexibility without firmware intervention.
How does On-Die Termination (ODT) work on CY7C2263XV18?
ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor tied to the ZQ pin. The ODT pin selects between two ranges: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω). Floating defaults to HIGH range, eliminating need for external 50 Ω resistors and improving signal integrity at 1266 MT/s.
Can CY7C2263XV18 operate with a single-ended clock source?
No - the device requires differential K/K clock inputs for proper DDR timing and echo clock generation. Driving K with a clock signal and tying K to ground or VDD violates AC timing specifications and disables CQ/CQ outputs and QVLD synchronization. A true differential clock source or dedicated clock buffer with complementary outputs is mandatory.
What is the role of the QVLD signal in system timing design?
QVLD is an edge-aligned valid-data indicator that pulses synchronously with CQ and CQ outputs. It signals exactly when Q[17:0] data is stable and ready for sampling by downstream logic, eliminating setup/hold uncertainty in high-speed receivers. Unlike simple clock-enable schemes, QVLD accounts for internal propagation delays and ensures reliable capture even under PVT variation.
CY7C2263XV18-600BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 600 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2263XV18-600BZXC FAQ
1.How can I place an order for CY7C2263XV18-600BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2263XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2263XV18-600BZXC reliable?
The price and inventory of CY7C2263XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2263XV18-600BZXC is usually 5 days.
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5.How can I obtain technical support or documentation for CY7C2263XV18-600BZXC?
For technical support, including CY7C2263XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2263XV18-600BZXC requirements.
6.How does Aetrix verify that CY7C2263XV18-600BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2263XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2263XV18-600BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2263XV18-600BZXC?
All CY7C2263XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2263XV18-600BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2263XV18-600BZXC part is unused and in its original packaging.
Return procedure for CY7C2263XV18-600BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C2263XV18-600BZXC Tags

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