Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C2263XV18-600BZXC

Part No.:
CY7C2263XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2263XV18-600BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:156

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C2263XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 2 M × 18 organization, 600 MHz maximum clock frequency, 2.5-cycle read latency, and on-die termination (ODT). It implements separate read/write DDR ports for concurrent high-bandwidth memory access in networking packet buffers and FPGA co-processor caches.

For engineers reviewing the CY7C2263XV18 datasheet, CY7C2263XV18 pinout, CY7C2263XV18 application, or CY7C2263XV18 equivalent, key selection criteria include its 1266 MT/s effective data rate, HSTL I/O compatibility, 165-ball FBGA package, DOFF-configurable latency mode, and echo-clock–assisted timing closure in 10G+ switch fabric designs.

Technical Context

This SRAM uses synchronous pipelined architecture with independent read and write ports, each operating at DDR rates on dedicated K/K clocks. Address latching occurs on alternating rising edges of K and K, enabling four-word burst transfers per access without bus turnaround.

The device integrates a PLL for precise data placement, supports ODT on D[17:0], BWS[1:0], and K/K inputs, and provides QVLD-synchronized valid-data indication. Its 1.8 V core supply and 1.4–1.6 V I/O supply enable low-power, high-speed operation compatible with modern FPGA and ASIC memory interfaces.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 organization)
Max Clock Frequency 600 MHz - determines maximum sustained bandwidth of 1266 MT/s per port
Read Latency 2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-constrained systems
I/O Voltage Range VDDQ = 1.4 V to 1.6 V - matches 1.5 V HSTL Class I/II interface standards
Core Supply VDD = 1.8 V ± 0.1 V - defines power integrity requirements and noise margin
On-Die Termination Supported on D[17:0], BWS[1:0], K/K - eliminates external 50 Ω resistors, reducing PCB area and signal reflections
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density routing in telecom line cards

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data sampled on rising edges of K/K; supports byte-selectable writes via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit DDR output aligned to CQ/CQ; tri-stated when RPS is deasserted
RPS / WPS Read/Write port select Active-low control signals sampled on K rising edge; enable independent port activation
BWS[1:0] Byte write select Two active-low signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); preserve unselected bytes during partial writes
K / K Differential clock inputs Rising-edge–triggered clocks for all synchronous operations; K used for address/data capture, K for echo-clock generation
CQ / CQ DDR echo clocks Free-running outputs synchronized to K/K; provide timing reference for latch alignment in high-speed receivers
QVLD Valid data indicator Output pulse edge-aligned with CQ/CQ; signals presence of valid Q[17:0] data for receiver sampling
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on ZQ resistor value; floating defaults to high range

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling by 75% versus single-word access, lowering system EMI and routing complexity
Separate read/write DDR ports Enables true concurrent read and write operations without bus contention or turnaround delay
Configurable 1-cycle / 2.5-cycle latency DOFF pin selects between QDR I–compatible (LOW) and QDR II+–optimized (HIGH) timing modes
HSTL Class I/II I/O buffers Ensures signal integrity at 1266 MT/s with programmable drive strength and on-die termination
JTAG 1149.1 test access port Supports boundary scan testing and in-system programming without requiring additional debug hardware

Applications

10G Ethernet Line Cards FPGA-Based Protocol Accelerators

Use Scenario: Storing and forwarding variable-length packet headers and metadata in multi-port 10G switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared buffer between ingress parser and egress scheduler logic.

Use Value: 1266 MT/s DDR throughput per port sustains full line-rate packet buffering with zero wait states under bursty traffic loads.

Use Scenario: Acting as instruction/data cache for soft-core processors embedded in Xilinx UltraScale+ FPGAs performing TLS offload.

IC Role / Device Role / Timing Role: Synchronous dual-port SRAM interfacing directly to AXI4-Stream and AXI4-Lite buses with deterministic 2.5-cycle read response.

Use Value: Independent read/write ports eliminate arbitration overhead, enabling simultaneous fetch and store during crypto pipeline execution.

Optical Transport Network (OTN) Framers High-Frequency Trading (HFT) Engine Buffers

Use Scenario: Buffering G.709 OTU4 frame overhead and payload segments in real-time framer/de-framer ICs.

IC Role / Device Role / Timing Role: Burst-access memory supporting 4-word interleaved reads aligned to 4-byte OTN byte boundaries.

Use Value: Four-word burst reduces address bus frequency by 4×, easing timing closure on 600 MHz clock domains while preserving full 36-Mbit capacity.

Use Scenario: Holding order book snapshots and market depth updates for sub-microsecond latency matching engines.

IC Role / Device Role / Timing Role: Deterministic-latency memory accessed by custom ASICs with tightly coupled read/write pipelines.

Use Value: 2.5-cycle read latency and QVLD-synchronized output enable cycle-accurate data capture without FIFO staging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II+ SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2265XV18 1 M × 36 configuration, 18 address pins, BWS[3:0]; same 600 MHz speed and ODT support Preferred for 36-bit wide bus architectures (e.g., 32-bit + parity, or native 36-bit datapaths) Select when system bus width matches 36-bit granularity and depth requirement is ≥1 M words
AS7C336000B-600BIN 36-Mbit QDR II+ SRAM, 2 M × 18, but lacks echo clocks (CQ/CQ) and QVLD; uses SSTL instead of HSTL Requires external timing compensation and higher termination complexity in >500 MHz designs Consider only if echo-clock–free board layout simplifies routing and SSTL-compatible controllers are used

Compared with CY7C2263XV18, CY7C2265XV18 offers identical performance in a wider, shallower configuration ideal for 36-bit buses, while AS7C336000B-600BIN trades timing assist features for lower cost in less demanding signal-integrity environments.

Availability

CY7C2263XV18 is available at Aetrix Electronics and suitable for 10G Ethernet line cards, FPGA-based protocol accelerators, optical transport network framers, and high-frequency trading engine buffers requiring stable component supply across multi-year production cycles.

Supply support for CY7C2263XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, technical support, and long-term supply commitment for the QDR® II+ Xtreme SRAM portfolio.

This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in wireline communications infrastructure and real-time embedded processing systems.

FAQ

What is the function of the DOFF pin on CY7C2263XV18?

The DOFF (Delay OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle latency optimized for QDR II+ timing; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I systems. This pin is sampled at power-up and remains static during operation, allowing system-level timing flexibility without firmware intervention.

How does On-Die Termination (ODT) work on CY7C2263XV18?

ODT applies programmable termination resistance to D[17:0], BWS[1:0], and K/K inputs using an external ZQ resistor tied to the ZQ pin. The ODT pin selects between two ranges: LOW sets RQ/3.33 (175–350 Ω), HIGH sets RQ/1.66 (175–250 Ω). Floating defaults to HIGH range, eliminating need for external 50 Ω resistors and improving signal integrity at 1266 MT/s.

Can CY7C2263XV18 operate with a single-ended clock source?

No - the device requires differential K/K clock inputs for proper DDR timing and echo clock generation. Driving K with a clock signal and tying K to ground or VDD violates AC timing specifications and disables CQ/CQ outputs and QVLD synchronization. A true differential clock source or dedicated clock buffer with complementary outputs is mandatory.

What is the role of the QVLD signal in system timing design?

QVLD is an edge-aligned valid-data indicator that pulses synchronously with CQ and CQ outputs. It signals exactly when Q[17:0] data is stable and ready for sampling by downstream logic, eliminating setup/hold uncertainty in high-speed receivers. Unlike simple clock-enable schemes, QVLD accounts for internal propagation delays and ensures reliable capture even under PVT variation.

CY7C2263XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2263XV18-600BZXC FAQ

1.How can I place an order for CY7C2263XV18-600BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2263XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2263XV18-600BZXC reliable?

The price and inventory of CY7C2263XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2263XV18-600BZXC is usually 5 days.

3.What payment methods are accepted for CY7C2263XV18-600BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2263XV18-600BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2263XV18-600BZXC?

CY7C2263XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2263XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2263XV18-600BZXC?

For technical support, including CY7C2263XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2263XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2263XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2263XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2263XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2263XV18-600BZXC?

All CY7C2263XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2263XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2263XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2263XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C2263XV18-600BZXC Tags

  • CY7C2263XV18-600BZXC
  • CY7C2263XV18-600BZXC PDF
  • CY7C2263XV18-600BZXC Datasheet
  • CY7C2263XV18-600BZXC Specifications
  • CY7C2263XV18-600BZXC Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C2263XV18-600BZXC
  • Buy CY7C2263XV18-600BZXC
  • CY7C2263XV18-600BZXC Price
  • CY7C2263XV18-600BZXC Distributor
  • CY7C2263XV18-600BZXC Supplier
  • CY7C2263XV18-600BZXC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER