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Cypress Semiconductor Corp CY7C2264XV18-450BZXC

Part No.:
CY7C2264XV18-450BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2264XV18-450BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,851

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Product details

Overview

CY7C2264XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with dual independent DDR ports, 450 MHz clock support, 2.5-cycle read latency, and on-die termination (ODT) for D[35:0], BWS[3:0], and K/K inputs - deployed in high-bandwidth packet buffering for telecom line cards.

For engineers reviewing the CY7C2264XV18 datasheet, CY7C2264XV18 pinout, CY7C2264XV18 application, or CY7C2264XV18 equivalent, key selection criteria include burst depth (2-word), VDDQ range (1.4–1.6 V), HSTL I/O compatibility, FBGA-165 package footprint, and DOFF-configurable latency mode (2.5-cycle vs. 1-cycle).

Technical Context

This SRAM implements QDR-II+ Xtreme architecture with physically separate read and write data paths, enabling true concurrent read/write transactions without bus turnaround. It uses two independent rising-edge-triggered clocks (K and K) to latch address and control signals, and employs echo clocks (CQ/CQ) synchronized to K/K for precise DDR data capture at 900 Mbps per port.

The device integrates a PLL for accurate internal timing alignment, supports synchronous self-timed writes, and provides full data coherency via pipelined access. ODT is programmable via ZQ resistor and ODT pin, supporting 175–350 Ω termination ranges for D[35:0], BWS[3:0], and clock inputs - eliminating external termination resistors in high-speed routing.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 organization)
Max Clock Frequency 450 MHz - enables 900 MT/s DDR data rate per port
Read Latency 2.5 cycles (DOFF = HIGH) - optimized for low-latency burst reads in networking buffers
VDD / VDDQ Core: 1.8 V ± 0.1 V; I/O: 1.4–1.6 V - supports 1.5 V HSTL interface compliance
Burst Length 2-word burst - halves effective address bus toggling frequency vs. single-word devices
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory modules
Termination On-Die Termination (ODT) for D[35:0], BWS[3:0], K/K - reduces PCB routing complexity and signal integrity risk

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output bus driven on rising edges of K/K; QVLD indicates valid data alignment with CQ/CQ
A[18:0] Multiplexed address input 19-bit address bus latched alternately on K (read) and K (write) rising edges - accesses full 1 M × 36 array
RPS / WPS Port select controls Active-low synchronous enables for read/write ports - allows independent port activation and depth expansion
K / K Dual input clocks Rising-edge-triggered clocks for all synchronous inputs; K drives read path, K drives write path - eliminates clock skew dependency
CQ / CQ Echo clock outputs Free-running, K/K-synchronized clocks for receiver-side data capture - simplifies timing closure in FPGA/ASIC interfaces
ODT ODT range select Configures termination resistance range (RQ/3.33 or RQ/1.66) during power-up - sets impedance matching for signal integrity
ZQ Reference resistor connection External precision resistor (175–350 Ω) sets absolute ODT value - enables calibrated on-die termination without board-level resistors

Key Features

Feature Design Value
Separate read/write data ports Enables simultaneous read and write operations without bus contention or turnaround delay - critical for full-duplex packet processing
2.5-cycle read latency (DOFF = HIGH) Reduces memory access delay in time-sensitive applications like Layer 2/3 forwarding engines while maintaining high throughput
HSTL Class I inputs / variable-drive outputs Ensures signal integrity at 450 MHz with controlled slew rates and compatible voltage levels for FPGA memory controllers
JTAG 1149.1 test access port Supports boundary scan testing and in-system diagnostics - essential for high-reliability telecom and industrial systems
Programmable ODT with ZQ calibration Eliminates need for 36 external 50 Ω termination resistors - saves >100 mm² PCB area and reduces BOM cost and routing congestion

Applications

Telecom Line Card Buffering High-Speed Network Switch ASIC Interface

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in OC-192/STM-64 line cards with strict latency budgets.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as packet buffer between ingress and egress traffic managers - reads incoming frames while writing outgoing frames concurrently.

Use Value: 2.5-cycle latency and 900 MT/s DDR bandwidth enable sub-100 ns round-trip access - meeting SONET/SDH jitter and delay requirements.

Use Scenario: Interfacing with multi-gigabit switch fabric ASICs requiring zero-turnaround memory for header parsing and lookup table storage.

IC Role / Device Role / Timing Role: High-speed burst SRAM providing deterministic read/write timing to ASIC's embedded memory controller via HSTL I/O.

Use Value: Echo clocks (CQ/CQ) align data valid windows precisely with ASIC sampling edges - eliminating setup/hold violations at 450 MHz.

Test Equipment Pattern Memory Avionics Data Acquisition Buffer

Use Scenario: Capturing high-resolution digital stimulus/response waveforms in automated test equipment (ATE) with real-time pattern generation.

IC Role / Device Role / Timing Role: Burst-access memory storing test vectors and expected results - accessed synchronously by FPGA-based sequencer logic.

Use Value: On-die termination and 1.5 V VDDQ reduce signal reflections on dense backplane traces - ensuring clean 900 Mbps data capture across 36-bit bus.

Use Scenario: Buffering sensor telemetry streams (e.g., inertial measurement units) in fly-by-wire avionics systems with deterministic timing constraints.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM providing coherent, low-latency storage for time-critical flight control data - powered from 1.8 V core rail.

Use Value: Full data coherency and synchronous self-timed writes guarantee atomic updates - preventing partial writes during interrupt-driven sampling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit QDR-II+, 333 MHz max, 2-cycle latency, no ODT, 208-pin TQFP Lacks on-die termination and echo clocks - requires external termination and tighter PCB layout control Preferred where legacy footprint compatibility or lower-cost packaging outweighs signal integrity benefits of ODT and CQ
AS7C33618B-15JIN 36-Mbit QDR-II+, 300 MHz max, 2-cycle latency, no DOFF latency selection, 165-ball FBGA Fixed 2-cycle latency only; no 2.5-cycle mode - limits optimization for mixed-read/write workloads Selected when system design locks to fixed latency and does not require DOFF-configurable timing modes

Compared with IDT72T36120L10BG and AS7C33618B-15JIN, CY7C2264XV18 delivers higher bandwidth (450 MHz vs. ≤333 MHz), configurable latency (2.5/1-cycle), and integrated ODT - reducing PCB complexity and enabling tighter timing margins in next-gen networking hardware.

Availability

CY7C2264XV18 is available at Aetrix Electronics and suitable for telecom infrastructure, high-speed test equipment, avionics data acquisition, and network switch ASIC interfacing requiring stable component supply and long-term lifecycle support.

Supply support for CY7C2264XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the QDR SRAM portfolio for high-performance memory applications in communications and industrial systems.

CY7C2264XV18 belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, low-latency, concurrent read/write memory access in packet-processing and real-time data acquisition systems.

FAQ

What is the function of the DOFF pin on CY7C2264XV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for optimized throughput in burst-heavy applications; when LOW, it reverts to 1-cycle latency like standard QDR-I devices. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.

How does On-Die Termination (ODT) work on CY7C2264XV18?

ODT is enabled via the ODT pin and calibrated using an external ZQ resistor (175–350 Ω) connected to the ZQ pin. A LOW on ODT selects RQ/3.33 termination (≈53–105 Ω); HIGH selects RQ/1.66 (≈106–210 Ω). Termination applies to D[35:0], BWS[3:0], and K/K inputs - reducing stub reflections and improving signal integrity at 450 MHz.

Can CY7C2264XV18 be used with a 1.5 V VDDQ supply?

Yes - VDDQ is specified from 1.4 V to 1.6 V, fully covering 1.5 V operation. The device uses HSTL Class I-compatible output drivers and input receivers at this voltage, ensuring interoperability with common FPGA memory controllers (e.g., Xilinx Ultrascale+, Intel Stratix 10) without level-shifting.

What is the role of CQ and CQ echo clocks?

CQ and CQ are free-running, K/K-synchronized output clocks that mirror the input clock timing with minimal skew. They provide a clean, phase-aligned reference for capturing Q[35:0] data in the receiving device - eliminating setup/hold timing uncertainty and simplifying high-speed interface design at 900 MT/s DDR rates.

CY7C2264XV18-450BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
450 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2264XV18-450BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2264XV18-450BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2264XV18-450BZXC reliable?

The price and inventory of CY7C2264XV18-450BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2264XV18-450BZXC is usually 5 days.

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CY7C2264XV18-450BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2264XV18-450BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2264XV18-450BZXC?

For technical support, including CY7C2264XV18-450BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2264XV18-450BZXC requirements.

6.How does Aetrix verify that CY7C2264XV18-450BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2264XV18-450BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2264XV18-450BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2264XV18-450BZXC?

All CY7C2264XV18-450BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2264XV18-450BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2264XV18-450BZXC part is unused and in its original packaging.

Return procedure for CY7C2264XV18-450BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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