Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C2265KV18-400BZXI

Part No.:
CY7C2265KV18-400BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2265KV18-400BZXI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,266

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C2265KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II+ SRAM with 4-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 400 MHz (2.5 ns clock period), supports DDR interfaces on both read and write ports (800 Mbps effective data rate), and uses 1.8 V core / 1.4–1.8 V I/O supply. It serves as high-bandwidth buffer memory in network packet processors and FPGA-based protocol acceleration engines.

For engineers reviewing the CY7C2265KV18 datasheet, CY7C2265KV18 pinout, CY7C2265KV18 application, or CY7C2265KV18 equivalent, key selection criteria include its 1 M × 36 organization, 400 MHz maximum frequency, ODT support for D[35:0]/BWS[3:0]/K/K inputs, echo clocks (CQ/CQ) for timing margin, and JTAG 1149.1 compliance for boundary scan testability.

Technical Context

The CY7C2265KV18 implements a true dual-port synchronous SRAM architecture with physically separate read and write data paths-no bus turnaround required. Its 256K × 36 memory array is organized across four internal banks, accessed via a shared 18-bit address bus latched on alternating edges of K and K clocks.

It integrates a PLL for precise data placement, echo clocks synchronized to K/K for receiver timing alignment, and programmable ODT with two impedance ranges selected by the ODT pin. The QVLD signal provides edge-aligned valid-data indication, and depth expansion is enabled via independent RPS/WPS controls.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1 M × 36 (36 Mbit total); enables single-word addressing without external demux for 36-bit datapaths
Max Clock Frequency 400 MHz; defines 2.5 ns minimum clock period and system bandwidth ceiling of 2.88 GB/s (4 × 36-bit × 400 MHz)
Read Latency 2.5 clock cycles when DOFF = HIGH; guarantees deterministic timing for pipeline-synchronized read responses
Interface Type DDR on both read and write ports; doubles data throughput per clock cycle without increasing clock frequency
Supply Voltages VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4–1.8 V (I/O); supports mixed-voltage systems and 1.5 V HSTL compatibility
On-Die Termination Configurable ODT for D[35:0], BWS[3:0], K, K; eliminates 72 external 50 Ω resistors and reduces PCB routing complexity
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant Pb-free option available; thermal resistance θJA = 28 °C/W

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edges of K/K; full 36-bit parallel write path eliminates byte-lane skew constraints
Q[35:0] Synchronous read data outputs Driven on rising edges of K/K; tri-stated automatically when RPS is deasserted
RPS / WPS Read/write port select (active LOW) Independent control enables concurrent read/write arbitration without external logic
BWS[3:0] Byte write select inputs Each controls 9-bit segment (D[8:0] to D[35:27]); allows partial-word writes without read-modify-write overhead
K / K Differential input clocks Rising edges drive all synchronous registers; K used for address/RPS/WPS, K for data/BWS
CQ / CQ Free-running echo clocks Phase-aligned to K/K outputs; simplifies high-speed capture in FPGA/ASIC receivers by eliminating clock-data skew
QVLD Valid data indicator Asserted coincident with first valid Q[35:0] word; enables reliable data capture without fixed delay assumptions
ODT On-die termination control Selects ODT range (RQ/3.33 or RQ/1.66) during power-up; floating defaults to high-range mode
ZQ Impedance calibration reference Connected to precision resistor to ground; sets output driver impedance to 0.2 × RQ for matched trace termination

Key Features

Feature Design Value
Four-word burst architecture Reduces address bus toggling frequency by 4× versus single-word access-critical for minimizing EMI in dense backplanes
Separate read/write data ports Enables true simultaneous read and write operations-eliminates arbitration logic and improves throughput in pipelined systems
Programmable on-die termination (ODT) Replaces 76 external termination resistors (D[35:0], BWS[3:0], K, K), cutting BOM cost and PCB area by >12 mm²
PLL + echo clocks (CQ/CQ) Provides sub-100 ps clock-to-data alignment margin at 400 MHz-enables reliable capture in 28 nm/16 nm FPGA I/Os
JTAG 1149.1 boundary scan Supports IEEE-compliant structural testing and interconnect verification-reduces board-level debug time by up to 70%

Applications

Network Packet Processing FPGA-Based Protocol Acceleration

Use Scenario: Line-rate buffering of IPv4/IPv6 packet headers and metadata in 10/25/40 GbE switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as descriptor queue and header cache between ingress parser and egress scheduler.

Use Value: 2.5-cycle read latency and concurrent R/W enable real-time header modification without stalling the pipeline-achieving <100 ns end-to-end processing delay.

Use Scenario: Storing lookup tables and state variables for TLS offload, IPsec encryption, and deep packet inspection in adaptive compute platforms.

IC Role / Device Role / Timing Role: Dual-port memory co-located with FPGA fabric to feed cryptographic engines and pattern-matching accelerators.

Use Value: Independent RPS/WPS and burst reads deliver 2.88 GB/s sustained bandwidth-matching AES-NI engine throughput and avoiding stall cycles.

Telecom Baseband Processing High-Speed Test Equipment

Use Scenario: Buffering IQ samples between ADC/DAC interfaces and digital pre-distortion (DPD) modules in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic latency for real-time DPD coefficient updates and sample buffering.

Use Value: Echo clocks (CQ/CQ) and QVLD eliminate setup/hold violations at 400 MHz-ensuring bit-accurate sample alignment across 64 antenna channels.

Use Scenario: Capturing high-fidelity waveform data from multi-GHz analog front-ends in automated test equipment (ATE) and oscilloscopes.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory interfacing directly to high-speed serializers and FPGA-based trigger logic.

Use Value: On-die termination and HSTL I/O ensure clean 800 Mbps DDR signaling over 10+ inch traces-reducing jitter-induced bit errors by >40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR II, 1 M × 36, 250 MHz max, no ODT, no echo clocks, 3.3 V I/O only Lacks ODT and echo clocks; requires external termination and tighter PCB layout; limited to legacy 3.3 V systems Select only if migrating from existing IDT-based designs with no bandwidth upgrade requirement and no need for 1.8 V core.
ISSI IS61WV102436B 36-Mbit sync SRAM, 1 M × 36, 166 MHz max, single-port, no DDR, no burst, 3.3 V only No concurrent R/W, no DDR, no burst-requires 4× more clock cycles per 144-bit transfer; unsuitable for >1 Gbps throughput Only viable for cost-sensitive, low-bandwidth control-plane buffers where latency and throughput are non-critical.

Compared with IDT72T3615L10BG and IS61WV102436B, CY7C2265KV18 delivers 60% higher bandwidth, eliminates 76 external resistors via ODT, and enables robust 400 MHz operation through echo clocks and QVLD-making it the sole choice for new 10+ GbE and 5G infrastructure designs.

Availability

CY7C2265KV18 is available at Aetrix Electronics and suitable for network packet processors, FPGA-based protocol accelerators, telecom baseband units, and high-speed test equipment requiring stable component supply across multi-year production cycles.

Supply support for CY7C2265KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C2265KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth buffering in packet-switched networks and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C2265KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.5-cycle read latency for optimal QDR II+ performance; when LOW, it reverts to 1-cycle latency compatible with legacy QDR I timing. This pin is sampled at power-up and must be held stable during initialization to avoid undefined behavior.

Can CY7C2265KV18 operate with VDDQ = 1.5 V while VDD = 1.8 V?

Yes. The device supports VDDQ from 1.4 V to VDD (1.8 V), including 1.5 V. At 1.5 V VDDQ, HSTL Class I output drive strength is maintained, and AC timing parameters remain within spec-verified in Cypress's DC/AC Electrical Characteristics table (Rev. *L, p.21–23).

How does the ZQ pin calibrate output impedance?

ZQ connects to a precision external resistor (typically 240 Ω) to ground. During power-up, the device measures this resistance and sets CQ, CQ, and Q[35:0] output drivers to 0.2 × RQ (e.g., 48 Ω for 240 Ω). Direct connection to VDDQ enables minimum impedance mode (~25 Ω); grounding or leaving unconnected is prohibited.

Is CY7C2265KV18 pin-compatible with CY7C2263KV18?

No. Although both use the same 165-ball FBGA package, pin assignments differ significantly: CY7C2263KV18 (2 M × 18) uses 19 address bits and BWS[1:0], while CY7C2265KV18 (1 M × 36) uses 18 address bits and BWS[3:0]. Signal mapping for D/Q, BWS, and internal bank selects is not interchangeable.

CY7C2265KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2265KV18-400BZXI FAQ

1.How can I place an order for CY7C2265KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2265KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2265KV18-400BZXI reliable?

The price and inventory of CY7C2265KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2265KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C2265KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2265KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2265KV18-400BZXI?

CY7C2265KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2265KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2265KV18-400BZXI?

For technical support, including CY7C2265KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2265KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C2265KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C2265KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2265KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C2265KV18-400BZXI?

All CY7C2265KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2265KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2265KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C2265KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C2265KV18-400BZXI Tags

  • CY7C2265KV18-400BZXI
  • CY7C2265KV18-400BZXI PDF
  • CY7C2265KV18-400BZXI Datasheet
  • CY7C2265KV18-400BZXI Specifications
  • CY7C2265KV18-400BZXI Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C2265KV18-400BZXI
  • Buy CY7C2265KV18-400BZXI
  • CY7C2265KV18-400BZXI Price
  • CY7C2265KV18-400BZXI Distributor
  • CY7C2265KV18-400BZXI Supplier
  • CY7C2265KV18-400BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER