Cypress Semiconductor Corp CY7C2265KV18-450BZC
- Part No.:
- CY7C2265KV18-450BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2265KV18-450BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2265KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II+ SRAM with 2.5-cycle read latency, 450 MHz clock operation (900 MT/s DDR), on-die termination (ODT), and HSTL I/O interfaces. It implements separate read/write ports for concurrent transactions and uses echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in networking packet buffers and baseband processing.
For engineers reviewing the CY7C2265KV18 datasheet, CY7C2265KV18 pinout, CY7C2265KV18 application, or CY7C2265KV18 equivalent, key selection criteria include its 1 M × 36 organization, 450 MHz maximum frequency, ODT support on D[35:0]/BWS[3:0]/K/K inputs, and 165-ball FBGA (13 × 15 × 1.4 mm) package with VDD = 1.8 V ± 0.1 V and VDDQ = 1.4–1.8 V.
Technical Context
The CY7C2265KV18 employs a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Each port operates with double-data-rate interfaces synchronized to K and K clocks, enabling four-word bursts per access at 450 MHz.
It integrates a PLL for accurate data placement, supports depth expansion via RPS/WPS controls, and implements on-die termination configurable via ODT and ZQ pins for D[35:0], BWS[3:0], and K/K inputs - eliminating external termination resistors while maintaining signal integrity at 900 MT/s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1 M × 36 organization) |
| Max Clock Frequency | 450 MHz - enables 900 MT/s DDR throughput on both ports |
| Read Latency | 2.5 clock cycles - fixed when DOFF = HIGH; supports deterministic timing in pipeline-critical systems |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - dual-voltage support for 1.5 V or 1.8 V system compatibility |
| Interface Standard | HSTL Class I inputs and variable-drive HSTL outputs - ensures impedance-matched signaling up to 450 MHz |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K, K - reduces PCB routing complexity and eliminates 12+ external 50 Ω resistors |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - industry-standard footprint for high-density memory subsystems |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit DDR output bus edge-aligned with CQ/CQ; tri-stated automatically when RPS is deasserted |
| RPS / WPS | Read/Write Port Select | Active-low asynchronous enable signals latched on K rising edge; enable independent port activation for concurrent access |
| BWS[3:0] | Byte Write Select | Four active-low signals controlling 9-bit byte lanes (D[8:0] to D[35:27]); allow partial-word writes without read-modify-write |
| K / K | Differential clock inputs | Rising edges drive all synchronous registers; K used for address/control latching, K for data capture - no internal inversion required |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K; simplify receiver timing margin by providing local strobes for Q[35:0] sampling |
| QVLD | Valid data indicator | Output pulse aligned with first valid Q[35:0] word in burst; enables latch control without fixed delay assumptions |
| ODT / ZQ | ODT configuration & impedance tuning | ODT selects termination range (RQ/1.66 or RQ/3.33); ZQ connects to external resistor (175–350 Ω) to calibrate output driver impedance to 0.2×RQ |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write ports | Enables true concurrent read and write operations without bus turnaround delays - critical for full-duplex packet buffering |
| Four-word burst architecture | Reduces effective address bus frequency by 4× - lowers routing congestion and timing closure effort in 450 MHz designs |
| On-die termination (ODT) | Configurable termination on data, byte-select, and clock inputs - eliminates 16+ external resistors and associated board area |
| Echo clocks (CQ/CQ) + QVLD | Provides source-synchronous strobes and explicit validity indication - removes setup/hold uncertainty in >450 MHz DDR capture |
| DOFF pin programmability | Selects between 2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency - allows trade-off between latency and bandwidth in system-level tuning |
Applications
| Networking Packet Buffer | Baseband Digital Front-End |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency budgets. IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer with simultaneous ingress/egress access. Use Value: 450 MHz DDR interface delivers 3.24 GB/s aggregate bandwidth; separate ports eliminate arbitration stalls during back-to-back packet processing. |
Use Scenario: Real-time buffering of IQ samples between ADC/DAC and FPGA-based digital signal processors in LTE/5G radio units. IC Role / Device Role / Timing Role: Synchronous burst memory for time-aligned sample storage with deterministic 2.5-cycle read response. Use Value: Echo clocks (CQ/CQ) and QVLD enable reliable 900 MT/s capture in FPGA I/O banks without custom delay calibration logic. |
| High-Speed Test Equipment Memory | Avionics Data Acquisition Buffer |
Use Scenario: Capturing high-fidelity waveform data from multi-channel digitizers in automated test systems requiring deep memory and real-time streaming. IC Role / Device Role / Timing Role: Burst-access SRAM acting as a high-bandwidth intermediate buffer between acquisition ASICs and PCIe host interface. Use Value: ODT support on all data and control lines ensures signal integrity across 16+ inch backplane traces at 450 MHz clock rates. |
Use Scenario: Buffering sensor telemetry (inertial, pressure, temperature) in flight control computers where radiation tolerance and supply stability are critical. IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM with controlled power-up sequence and stable 1.8 V core operation. Use Value: Neutron soft error immunity (documented in datasheet) combined with VDD = 1.8 V ± 0.1 V regulation meets DO-254 functional safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 1 M × 36, 550 MHz max, same 165-ball FBGA but requires 1.5 V VDDQ only; no DOFF latency select | Higher max frequency but less flexible I/O voltage range; lacks DOFF-driven latency switching | Preferred when system demands 550 MHz operation and VDDQ is fixed at 1.5 V; not suitable for mixed 1.4–1.8 V I/O environments |
| ISSI IS61WV102436B | 1 M × 36 QDR II+ SRAM, 400 MHz max, 165-ball FBGA, supports 1.4–1.8 V VDDQ, includes JTAG boundary scan | Lower bandwidth (2.88 GB/s vs 3.24 GB/s), identical ODT/ZQ implementation, adds IEEE 1149.1 TAP for production testability | Selected for cost-sensitive industrial applications where 400 MHz suffices and JTAG test access is required for board-level validation |
Compared with IDT72T3615L10BG and ISSI IS61WV102436B, CY7C2265KV18 uniquely balances 450 MHz performance, 1.4–1.8 V I/O flexibility, and programmable 2.5/1-cycle latency - making it optimal for systems needing adaptive timing behavior without sacrificing bandwidth or voltage margin.
Availability
CY7C2265KV18 is available at Aetrix Electronics and suitable for networking packet buffers, baseband digital front-ends, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for CY7C2265KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C2265KV18 belongs to Cypress's QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in packet-processing and signal-processing systems demanding concurrent read/write access and sub-5 ns latency.
FAQ
What is the function of the DOFF pin on CY7C2265KV18?
The DOFF (Delay OFF) pin selects read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency; when LOW, it reverts to 1-cycle latency like QDR I. This allows system designers to optimize for bandwidth (2.5-cycle) or minimal latency (1-cycle) without changing hardware, and the setting is sampled at power-up initialization.
How does on-die termination (ODT) work on CY7C2265KV18?
ODT is enabled via the ODT pin and calibrated using an external resistor on the ZQ pin. When ODT is active, it applies programmable termination (RQ/1.66 or RQ/3.33) to D[35:0], BWS[3:0], and K/K inputs. This replaces discrete 50 Ω resistors, reducing PCB layer count, improving signal integrity, and simplifying layout - especially critical for 450 MHz DDR routing.
Can CY7C2265KV18 be used with a 1.5 V VDDQ supply?
Yes. The device supports VDDQ from 1.4 V to 1.8 V, fully compatible with 1.5 V systems. HSTL Class I drivers and receivers are specified across this range, and DC/AC electrical characteristics (including setup/hold times and ODT values) are guaranteed at 1.5 V - confirmed in the "Operating Range" and "DC Electrical Characteristics" sections of datasheet 001-57843 Rev. *L.
What is the role of CQ and CQ echo clocks?
CQ and CQ are free-running, phase-aligned copies of the K and K input clocks, respectively. They serve as source-synchronous strobes for capturing Q[35:0] output data, eliminating skew-dependent timing margins. Unlike conventional clocks, they track K/K jitter and duty cycle variations, enabling robust 900 MT/s DDR sampling in FPGAs without manual delay tuning or IDELAYCTRL calibration.
CY7C2265KV18-450BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 450 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2265KV18-450BZC FAQ
1.How can I place an order for CY7C2265KV18-450BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2265KV18-450BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2265KV18-450BZC reliable?
The price and inventory of CY7C2265KV18-450BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2265KV18-450BZC is usually 5 days.
3.What payment methods are accepted for CY7C2265KV18-450BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2265KV18-450BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C2265KV18-450BZC?
CY7C2265KV18-450BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C2265KV18-450BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2265KV18-450BZC?
For technical support, including CY7C2265KV18-450BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2265KV18-450BZC requirements.
6.How does Aetrix verify that CY7C2265KV18-450BZC is sourced from the original manufacturer or authorized distributors?
All CY7C2265KV18-450BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2265KV18-450BZC meets industry standards.
7.What is the process for return or replacement of CY7C2265KV18-450BZC?
All CY7C2265KV18-450BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2265KV18-450BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2265KV18-450BZC part is unused and in its original packaging.
Return procedure for CY7C2265KV18-450BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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