Cypress Semiconductor Corp CY7C2265XV18-600BZXC

Overview

CY7C2265XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency, and on-die termination (ODT). It operates at 600 MHz clock frequency (1200 MT/s DDR), supports separate read/write ports for concurrent transactions, and uses HSTL I/O with 1.5 V VDDQ supply - deployed in high-bandwidth packet buffering and network switch fabric applications.

For engineers reviewing the CY7C2265XV18 datasheet, CY7C2265XV18 pinout, CY7C2265XV18 application, or CY7C2265XV18 equivalent, key selection criteria include its 1 M × 36 configuration, 600 MHz max clock, ODT support on D[35:0]/BWS[3:0]/K/K inputs, echo clocks (CQ/CQ), and QVLD data-valid signaling for precise DDR capture in telecom infrastructure designs.

Technical Context

This SRAM implements QDR II+ Xtreme architecture with fully independent synchronous read and write ports sharing a multiplexed address bus. Each port uses DDR interfaces synchronized to complementary K/K clocks, enabling 1200 MT/s effective throughput without bus turnaround delays.

The device integrates a PLL for accurate data placement, supports programmable ODT impedance via ZQ calibration and ODT pin logic level, and provides depth expansion via RPS/WPS controls. Read latency is configurable: 2.5 cycles when DOFF = HIGH, or 1 cycle when DOFF = LOW - matching legacy QDR I timing where needed.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with CY7C2265XV18-550BZXC and AS7C33618B-15PCCN, the CY7C2265XV18-600BZXC delivers highest deterministic bandwidth (1200 MT/s), integrated signal integrity features (ODT, QVLD, echo clocks), and seamless QDR II+/QDR I mode switching - making it optimal for new designs targeting 10G+ infrastructure.

Availability

CY7C2265XV18-600BZXC is available at Aetrix Electronics and suitable for network switch fabric buffering, telecom line card packet memory, optical transport framer applications requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.

Supply support for CY7C2265XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR® II+ Xtreme SRAM portfolio.

This device belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking, telecom, and high-frequency data processing equipment.

FAQ

What is the function of the DOFF pin on CY7C2265XV18-600BZXC?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, the device operates with 2.5-cycle read latency (QDR II+ mode); when LOW, it reverts to 1-cycle latency (QDR I compatibility mode). This pin is sampled at power-up and remains latched until reset, enabling flexible integration across legacy and next-generation systems without hardware changes.

How does On-Die Termination (ODT) work on this SRAM?

ODT applies calibrated termination resistance to D[35:0], BWS[3:0], and K/K inputs using an external ZQ resistor (typically 240 Ω) tied to the ZQ pin. The ODT pin selects between two ranges: LOW sets R_ODT ≈ R_ZQ/3.33 (~72 Ω), HIGH sets R_ODT ≈ R_ZQ/1.66 (~144 Ω). This eliminates need for discrete 50 Ω or 75 Ω terminators on high-speed lines.

Can CY7C2265XV18-600BZXC be used with a 1.8 V-only supply?

No - the device requires dual supplies: core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.6 V (typically 1.5 V). Operating VDDQ outside this range violates HSTL Class I specifications and risks signal integrity failure or latch-up. VDDQ must be independently regulated and decoupled from VDD.

What is the purpose of CQ and CQ echo clocks?

CQ and CQ are free-running, phase-aligned output copies of the K and K input clocks. They provide a local timing reference at the receiver (e.g., FPGA) to sample Q[35:0] data without compensating for board-level clock skew. Their edge alignment with QVLD ensures reliable data capture at 600 MHz without complex deskew circuitry.