Cypress Semiconductor Corp CY7C2265XV18-633BZXC
- Part No.:
- CY7C2265XV18-633BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C2265XV18-633BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C2265XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with 2.5-cycle read latency, 633 MHz clock operation, and on-die termination (ODT). It features separate read/write DDR ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and operates at 1.8 V core / 1.5 V I/O supply. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C2265XV18 datasheet, CY7C2265XV18 pinout, CY7C2265XV18 application, or CY7C2265XV18 equivalent, key selection criteria include 1 M × 36 configuration, 633 MHz maximum frequency, HSTL I/O compatibility, 165-ball FBGA package, and ODT support for D[35:0], BWS[3:0], and K/K inputs.
Technical Context
This SRAM implements QDR II+ architecture with fully independent synchronous read and write ports, each using DDR interfaces to achieve 1266 MT/s effective data rate. Address latching occurs on alternating rising edges of K and K clocks, enabling four-word burst transfers per access without bus turnaround.
The device integrates a PLL for precise data placement, supports programmable ODT via ZQ calibration and ODT pin selection, and provides echo clocks synchronized to K/K for simplified high-speed capture. DOFF pin configures read latency between 2.5 cycles (HIGH) and 1 cycle (LOW), maintaining functional compatibility with legacy QDR I systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1 M × 36 organization) |
| Max Clock Frequency | 633 MHz - enables 1266 MT/s DDR throughput on both ports |
| Read Latency | 2.5 clock cycles (DOFF = HIGH) - balances speed and timing margin in pipeline-critical designs |
| Core Supply Voltage | 1.8 V ± 0.1 V - defines minimum power rail stability requirement for internal logic |
| I/O Supply Range | 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling with variable drive strength |
| On-Die Termination | Supported on D[35:0], BWS[3:0], K/K - eliminates external 50 Ω resistors for signal integrity |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory in dense PCB layouts |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit wide DDR output bus driven on rising edges of K/K; tri-stated when RPS is deasserted |
| RPS | Read port select (active LOW) | Enables read transaction initiation on next K rising edge; controls Q[35:0] driver enable |
| WPS | Write port select (active LOW) | Enables write transaction initiation on next K rising edge; gates D[35:0] into memory array |
| BWS[3:0] | Byte write select (active LOW) | Four independent 9-bit byte masks: BWS0–D[8:0], BWS1–D[17:9], BWS2–D[26:18], BWS3–D[35:27] |
| K / K | Differential clock inputs | Rising edges latch all synchronous inputs (address, data, control); K drives read path, K drives write path |
| CQ / CQ | Echo clock outputs | Free-running, K/K-synchronized clocks aligned with Q[35:0] valid windows; simplify capture in FPGA/ASIC receivers |
| QVLD | Data validity indicator | Asserted coincident with first valid Q[35:0] word in burst; edge-aligned to CQ/CQ for deterministic sampling |
| ODT | On-die termination control | Selects ODT resistance range (RQ/1.66 or RQ/3.33) based on external ZQ resistor; floating defaults to high range |
| ZQ | ODT calibration reference | Connects to precision 240 Ω resistor to ground; sets absolute ODT impedance baseline during power-up initialization |
| DOFF | Read latency mode select | HIGH → 2.5-cycle latency (QDR II+ mode); LOW → 1-cycle latency (QDR I backward compatibility) |
| VDD / VDDQ | Power supplies | VDD = 1.8 V core; VDDQ = 1.5 V I/O - requires separate low-noise regulation and decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces address bus toggling by 75% versus single-word access - lowers EMI and simplifies controller logic |
| Separate read/write DDR ports | Eliminates bidirectional bus turnaround delays - enables true concurrent read/write operations without arbitration |
| Programmable ODT with ZQ calibration | Removes need for 36 external 50 Ω terminators - saves >100 mm² PCB area and reduces BOM count |
| PLL-based data placement | Compensates for clock skew across wide data buses - ensures setup/hold compliance at 633 MHz in multi-FPGA systems |
| JTAG 1149.1 boundary scan | Enables production testability and debug visibility of interconnects without physical probe access |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet flows in L2/L3 switching ASICs. IC Role / Device Role / Timing Role: Primary high-throughput SRAM buffer interfacing directly to SerDes PHYs and traffic manager units. Use Value: 1266 MT/s DDR bandwidth and 2.5-cycle latency meet sub-100 ns round-trip memory access requirements for cut-through forwarding. |
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: Dual-port memory staging data between high-speed digitizers and pattern generators under tight timing constraints. Use Value: Independent read/write ports enable simultaneous acquisition and playback without contention - critical for jitter-sensitive test vectors. |
| Telecom Baseband Processing | Avionics Data Concentrators |
|
Use Scenario: Intermediate storage for OFDM symbol processing in 4G/5G baseband units requiring deterministic latency. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for FFT/IFFT engines and channel estimation blocks. Use Value: DOFF pin allows runtime switching between 1-cycle (legacy) and 2.5-cycle (optimized) modes - supports firmware-upgradable latency tuning. |
Use Scenario: ARINC 664 (AFDX) end-system buffering in flight control computers where data coherency and fault tolerance are mandatory. IC Role / Device Role / Timing Role: Synchronous dual-port SRAM ensuring atomic read-modify-write for time-triggered communication buffers. Use Value: Full data coherency guarantees most-current values on every read - prevents stale state propagation in safety-critical avionics loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C2263XV18 | 2 M × 18 configuration (same 36-Mbit density); identical timing, pinout, and feature set except address/data width | Preferred when system uses 18-bit datapath width or requires depth expansion over width expansion | Select CY7C2263XV18 if board layout or controller interface is optimized for ×18 bus; no change in timing or power behavior |
| AS7C33600B-166BIN | Asynchronous 36-Mbit SRAM; 166 MHz max frequency; no DDR, no ODT, no echo clocks; 54-pin TSOP-II package | Suitable only for non-pipelined, lower-bandwidth applications where latency predictability outweighs throughput needs | Choose only for cost-sensitive, non-high-speed designs where 1266 MT/s is unnecessary and board space permits larger TSOP package |
Compared with CY7C2265XV18, CY7C2263XV18 offers identical performance in a ×18 format ideal for width-constrained controllers, while AS7C33600B-166BIN trades off 7.6× lower bandwidth and no advanced features for simpler interface and lower unit cost in legacy systems.
Availability
CY7C2265XV18 is available at Aetrix Electronics and suitable for network switching, high-speed test instrumentation, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for CY7C2265XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the QDR® II+ Xtreme SRAM family.
CY7C2265XV18 belongs to Infineon's high-performance memory portfolio designed specifically for deterministic, low-latency, high-throughput buffering in networking, test, and communications infrastructure.
FAQ
What is the function of the DOFF pin on CY7C2265XV18?
The DOFF (Data-Off) pin selects read latency mode: when asserted HIGH, it enables 2.5-cycle latency for optimal QDR II+ performance; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This is a static configuration pin sampled at power-up and does not require dynamic control during operation.
How does On-Die Termination (ODT) work on CY7C2265XV18?
ODT is configured using the ODT pin and an external ZQ resistor (typically 240 Ω to ground). The ODT pin selects between two impedance ranges: HIGH enables RQ/1.66 (~144 Ω), LOW enables RQ/3.33 (~72 Ω). ODT applies to D[35:0], BWS[3:0], and K/K inputs, eliminating need for external parallel termination resistors.
Can CY7C2265XV18 operate with a single-ended clock instead of differential K/K?
No - the device requires true differential K and K clock inputs. Both signals must be driven with complementary waveforms; tying K to ground or VDD violates AC timing specifications and disables proper input sampling. External clock generators or FPGA transceivers must provide matched, low-skew differential pairs.
What is the role of QVLD and how is it timed relative to CQ/CQ?
QVLD is a synchronous output that asserts one cycle before the first valid data word appears on Q[35:0] in a read burst. It is edge-aligned with CQ and CQ, providing a clean, clock-synchronous strobe for capturing Q[35:0] in receiving logic - essential for reliable DDR data recovery at 633 MHz.
CY7C2265XV18-633BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 633 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C2265XV18-633BZXC FAQ
1.How can I place an order for CY7C2265XV18-633BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C2265XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C2265XV18-633BZXC reliable?
The price and inventory of CY7C2265XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2265XV18-633BZXC is usually 5 days.
3.What payment methods are accepted for CY7C2265XV18-633BZXC?
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Once your CY7C2265XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C2265XV18-633BZXC?
For technical support, including CY7C2265XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2265XV18-633BZXC requirements.
6.How does Aetrix verify that CY7C2265XV18-633BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C2265XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2265XV18-633BZXC meets industry standards.
7.What is the process for return or replacement of CY7C2265XV18-633BZXC?
All CY7C2265XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2265XV18-633BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C2265XV18-633BZXC part is unused and in its original packaging.
Return procedure for CY7C2265XV18-633BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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