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Cypress Semiconductor Corp CY7C2268XV18-600BZXC

Part No.:
CY7C2268XV18-600BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2268XV18-600BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:248

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Product details

Overview

CY7C2268XV18-600BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit DDR II+ Xtreme SRAM with 2M × 18 organization, 600 MHz clock operation, 2.5-cycle read latency (DOFF = HIGH), and on-die termination (ODT) for DQ/BWS/K/K inputs. It delivers 1200 MT/s data throughput via double-data-rate interface and targets high-bandwidth buffering in network packet processors and telecom line cards.

For engineers reviewing the CY7C2268XV18-600BZXC datasheet, CY7C2268XV18-600BZXC pinout, CY7C2268XV18-600BZXC application, or CY7C2268XV18-600BZXC equivalent, this page provides verified package mapping, validated pin functions, confirmed ODT behavior, echo clock timing alignment, and real-world burst-mode integration requirements for DDR II+ synchronous SRAM systems.

Technical Context

This SRAM implements a synchronous pipelined architecture with two-word burst transfers initiated on alternate rising edges of K and K clocks. All address, control, and data signals are registered synchronously to K (for LD, R/W, A) or both K/K (for DQ, BWS), enabling precise DDR timing without external phase alignment circuitry.

The device integrates a PLL for accurate data placement relative to echo clocks CQ/CQ, supports HSTL I/O with variable drive strength, and uses ZQ calibration to set output impedance to 0.2 × RQ. ODT is dynamically enabled only during write cycles and disabled during reads - a key distinction from static termination schemes.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 36 Mbit (2M × 18), dual 1M × 18 arrays - enables 36-bit-wide burst transfers per access cycle
Max Clock Frequency 600 MHz - defines maximum sustained bus bandwidth of 1200 MT/s (DDR)
Read Latency 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable via dedicated pin for DDR I/II+ mode compatibility
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.6 V - supports 1.5 V I/O supply with HSTL-compliant signaling
ODT Support Active on DQ[17:0], BWS[1:0], K/K - eliminates need for 24+ external 50 Ω resistors, reducing PCB area and routing complexity
Echo Clocks CQ/CQ outputs aligned to K/K - provide deterministic data capture timing, removing system-level skew compensation
QVLD Signal Edge-aligned with CQ/CQ - directly indicates valid data window without requiring additional strobe logic or delay tuning

Pinout & Package

Package: 165-ball FBGA (13 mm × 15 mm × 1.4 mm), Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Transfers two 18-bit words per burst; sampled on K/K rising edges during writes, driven on K/K rising edges during reads
K / K Differential input clocks Rising edges initiate all transactions; K controls LD/R/W/A registration; both control DQ/BWS sampling and Q output timing
CQ / CQ Synchronous echo clocks Free-running, K-synchronized outputs used for reliable data capture; edge-aligned with QVLD and DQ valid windows
QVLD Valid data indicator Asserted concurrently with first valid DQ word on CQ/CQ edges - eliminates need for fixed-delay sampling logic
ODT On-die termination select Configures ODT resistance range at power-up: LOW → RQ/3.33 (~175–350 Ω); HIGH/floating → RQ/1.66 (~175–250 Ω)
ZQ Impedance calibration reference Connected to external resistor to GND; sets DQ/CQ output impedance to 0.2 × RQ - critical for signal integrity matching
DOFF Latency mode select HIGH → 2.5-cycle DDR II+ latency; LOW → 1-cycle DDR I latency - enables backward compatibility in mixed-generation systems

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% vs. single-word SRAMs - lowers EMI and simplifies controller address generation
Programmable ODT with dual-range selection Eliminates 24 discrete termination resistors and associated layout constraints - cuts board area and improves signal fidelity
Integrated PLL + echo clocks (CQ/CQ) Removes need for external clock forwarding ICs or FPGA-based deskew logic - reduces component count and timing margin risk
QVLD synchronized to echo clocks Provides unambiguous, jitter-tolerant data validity indication - avoids setup/hold violations in high-speed capture interfaces
JTAG 1149.1 test access port Enables boundary scan testing and in-system debug without adding test points - supports automated manufacturing test coverage

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switching ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency buffer between ingress parser and egress scheduler; operates at 600 MHz with 2.5-cycle latency to match pipeline depth.

Use Value: Two-word burst mode halves address bus activity, reducing controller logic complexity and power consumption while sustaining 1200 MT/s throughput.

Use Scenario: Frame buffering in 10G/40G optical transport equipment with strict jitter and skew tolerance.

IC Role / Device Role / Timing Role: Synchronous DDR II+ SRAM interfacing directly to SerDes PHYs; uses CQ/CQ and QVLD for deterministic data capture without FPGA deskew.

Use Value: On-die termination and ZQ calibration ensure impedance-matched signaling across wide temperature ranges, minimizing bit error rates.

Baseband Processing Cache High-Speed Test Equipment Memory

Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband processors during FFT/IFFT execution.

IC Role / Device Role / Timing Role: Burst-access cache feeding DSP cores; DOFF pin configured for 1-cycle DDR I mode during latency-critical bursts.

Use Value: Selectable latency allows dynamic trade-off between throughput and pipeline stall - improving real-time processing determinism.

Use Scenario: Pattern memory in automated test equipment (ATE) generating high-fidelity digital stimulus waveforms.

IC Role / Device Role / Timing Role: Deterministic, jitter-free waveform storage with precise edge-aligned QVLD and echo clocks for sub-nanosecond timing resolution.

Use Value: Eliminates external clock distribution networks and termination components - improving test repeatability and reducing calibration overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2268XV18-633BZXC Higher max clock (633 MHz vs. 600 MHz); identical pinout, timing, and feature set Requires tighter PCB layout tolerances and higher-quality clock sources; suitable only where >1200 MT/s is mandatory Select when system clock budget allows 633 MHz operation and marginal timing headroom exists
AS7C336200B-15JIN Asynchronous 36-Mbit SRAM (no DDR, no ODT, no echo clocks); 15 ns access time; SOJ-54 package Lacks burst, DDR, and termination features - requires external clock domain crossing and termination resistors Choose only for legacy designs lacking DDR infrastructure or where ultra-low latency (<15 ns) asynchronous access is prioritized over bandwidth

Compared with CY7C2268XV18-600BZXC, the -633BZXC variant offers +5.5% bandwidth at the cost of stricter signal integrity requirements, while the AS7C336200B-15JIN trades DDR efficiency and integration for simpler interface design and lower clocking complexity - making it viable only in non-burst, non-termination-sensitive applications.

Availability

CY7C2268XV18-600BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C2268XV18-600BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio including DDR II+ Xtreme devices.

This part belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking, telecom, and test instrumentation where DDR timing precision, on-die termination, and echo-clock synchronization are critical.

FAQ

What is the function of the DOFF pin on CY7C2268XV18-600BZXC?

The DOFF (Disable Off) pin selects read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset, enabling hardware-selectable timing behavior without firmware intervention.

How does on-die termination (ODT) work on this SRAM?

ODT is enabled only during write operations on DQ[17:0], BWS[1:0], and K/K inputs. Its resistance value is selected at power-up via the ODT pin and calibrated using the ZQ pin's external resistor. ODT automatically disables during reads, eliminating signal integrity conflicts between driving and receiving states on shared buses.

Can CQ and CQ be used as system clock sources?

No - CQ and CQ are echo clocks derived from K/K and intended solely for data capture synchronization. They are not buffered or designed for fan-out; using them as system clocks risks jitter accumulation and violates timing specifications. External clock buffers must be used for distribution.

Is the 165-ball FBGA package compatible with standard reflow profiles?

Yes - the CY7C2268XV18-600BZXC uses a Pb-free, RoHS-compliant 165-ball FBGA (13 × 15 × 1.4 mm) qualified for JEDEC J-STD-020D moisture sensitivity level 3. Standard lead-free reflow profiles with peak temperature ≤260°C and time above liquidus 60–150 seconds are fully supported.

CY7C2268XV18-600BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
600 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2268XV18-600BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C2268XV18-600BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2268XV18-600BZXC reliable?

The price and inventory of CY7C2268XV18-600BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2268XV18-600BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2268XV18-600BZXC transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C2268XV18-600BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2268XV18-600BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2268XV18-600BZXC?

For technical support, including CY7C2268XV18-600BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2268XV18-600BZXC requirements.

6.How does Aetrix verify that CY7C2268XV18-600BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2268XV18-600BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2268XV18-600BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2268XV18-600BZXC?

All CY7C2268XV18-600BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2268XV18-600BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2268XV18-600BZXC part is unused and in its original packaging.

Return procedure for CY7C2268XV18-600BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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