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Cypress Semiconductor Corp CY7C2268XV18-633BZXC

Part No.:
CY7C2268XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2268XV18-633BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

CY7C2268XV18-633BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit DDR II+ Xtreme SRAM with 2M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency (DOFF = HIGH), on-die termination (ODT), and HSTL I/O interface. It delivers 1266 MT/s data throughput via double-data-rate operation and targets high-bandwidth buffering in networking line cards and packet-switching ASIC interfaces.

For engineers reviewing the CY7C2268XV18-633BZXC datasheet, CY7C2268XV18-633BZXC pinout, CY7C2268XV18-633BZXC application, or CY7C2268XV18-633BZXC equivalent, key selection criteria include DDR II+ burst timing compliance, ODT configuration for DQ/BWS/K/K inputs, echo clock (CQ/CQ) synchronization, QVLD validity signaling, and 165-ball FBGA mechanical compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements a synchronous pipelined architecture with dual-edge-aligned DDR interface: address and control signals (A, R/W, LD, BWS) are latched on rising edges of K only, while write data is registered on both K and K rising edges, and read data is driven on both K and K rising edges. The device uses internal PLL for precise data placement relative to echo clocks.

It supports two operational modes via DOFF pin: 2.5-cycle latency DDR II+ mode (DOFF = HIGH) for optimized bandwidth in burst-intensive systems, and 1-cycle latency DDR I-compatible mode (DOFF = LOW). ODT is enabled only during write cycles and configurable via ODT pin and external ZQ resistor for DQ, BWS, and K/K inputs.

Key Specifications

Parameter Value and Actual Design Meaning
Density 36 Mbit (2M × 18), enabling 36-bit-wide burst transfers per access
Max Clock Frequency 633 MHz - sets maximum system bus speed and determines 1266 MT/s effective data rate
Read Latency 2.5 clock cycles when DOFF = HIGH - defines minimum time from address load to first valid output word
I/O Voltage VDDQ = 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling with controlled drive strength
Core Voltage VDD = 1.8 V ± 0.1 V - powers SRAM core and internal logic with tight regulation requirement
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides 0.8 mm ball pitch for high-density routing and thermal dissipation
On-Die Termination Configurable ODT for DQ[17:0], BWS[1:0], K, K - eliminates external resistors and improves signal integrity on stub-loaded buses

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus Transfers 18-bit words on both K and K rising edges; tri-stated automatically during deselect
K / K Differential clock inputs K captures address/control; both K and K register write data and drive read data - no internal inversion required
CQ / CQ Output-synchronized echo clocks Free-running, edge-aligned copies of K/K used by system logic to capture DQ data without board-level skew compensation
QVLD Valid data indicator Asserted synchronously with CQ/CQ edges to signal presence of valid DQ data - eliminates need for fixed delay windows
ODT On-die termination select Configures ODT resistance range (RQ/3.33 or RQ/1.66) for DQ/BWS/K/K during write cycles only
ZQ Impedance calibration reference Connects to external precision resistor (175–350 Ω) to calibrate output driver and ODT impedance to 0.2 × RQ
LD Load strobe Latched on K rising edge to define start of burst transaction - initiates address decode and pipeline sequencing
BWS[1:0] Byte write select Active-low controls 9-bit byte segments: BWS0 → DQ[8:0], BWS1 → DQ[17:9] - enables partial-word writes without read-modify-write

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address generation
DDR II+ Xtreme timing mode 2.5-cycle read latency with deterministic echo-clock alignment - enables predictable timing closure in multi-SRAM parallel configurations
HSTL-compatible I/O buffers Variable-drive outputs matched to 1.5 V HSTL-18 standards - ensures signal integrity at 1266 MT/s on FR4 backplanes
JTAG 1149.1 test access port Enables boundary scan testing and in-system debug without additional test pads - supports production ICT and field diagnostics
Synchronous self-timed writes Eliminates external write pulse timing constraints - controller needs only meet K/K setup/hold; internal logic handles write duration

Applications

Network Packet Buffering Telecom Line Card Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency burst buffer interfacing directly to SerDes MAC controllers via DDR II+ bus.

Use Value: 2.5-cycle latency and echo clocks enable deterministic 1266 MT/s reads without complex deskew circuitry - reduces FPGA logic overhead by ~18%.

Use Scenario: Acting as shared instruction/data cache between DSP clusters and framer ICs in OTN transport equipment.

IC Role / Device Role / Timing Role: Synchronous pipelined SRAM providing burst-aligned access to time-critical control plane data.

Use Value: On-die termination eliminates 36 external 39 Ω resistors per device - saves 27 mm² PCB area and improves SI margin by 12 dB at 633 MHz.

High-Speed Test Equipment Memory Radar Signal Processing Buffer

Use Scenario: Capturing real-time waveform samples in automated test systems with >1 GS/s sampling rates.

IC Role / Device Role / Timing Role: Burst-mode acquisition memory synchronized to system clock domain using K/K and CQ/CQ.

Use Value: QVLD pin provides cycle-accurate validity flag - removes need for fixed-delay FIFOs or timestamp interpolation in post-processing pipelines.

Use Scenario: Holding intermediate FFT results in phased-array radar front-ends requiring sub-10 ns access jitter.

IC Role / Device Role / Timing Role: Low-jitter DDR II+ SRAM interfaced to high-speed ADC/DAC controllers with precise echo-clock alignment.

Use Value: PLL-based data placement ensures < ±75 ps output jitter - meets JEDEC JESD209-2B timing budget for 1266 MT/s burst transfers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2270XV18-633BZXC Same die, 1M × 36 organization; identical timing, ODT, and pinout except wider DQ[35:0] and four BWS pins Used where 36-bit native word width matches processor or ASIC bus - avoids glue logic for 18-bit packing/unpacking Select when system data path is naturally 36-bit or requires higher density per package footprint
IS61WV102418BLL-10BLI Asynchronous 1M × 18 SRAM; no DDR, no ODT, no echo clocks; 10 ns access, 3.3 V core/I/O Targeted at legacy control-plane buffering where timing predictability outweighs bandwidth - no clock domain crossing needed Choose only for cost-sensitive, non-burst, low-frequency control applications - not suitable for DDR II+ replacement

Compared with CY7C2270XV18-633BZXC, this part offers narrower 18-bit bus and lower pin count for space-constrained layouts; versus IS61WV102418BLL-10BLI, it delivers 126× higher effective bandwidth but requires strict DDR timing design and echo-clock capture infrastructure.

Availability

CY7C2268XV18-633BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, high-speed test equipment memory, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C2268XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains full product continuity, documentation, and support for the former Cypress SRAM portfolio including DDR II+ Xtreme devices.

This part belongs to the DDR II+ Xtreme SRAM product line, engineered specifically for deterministic, high-bandwidth burst buffering in networking, telecom, and test instrumentation systems operating above 600 MHz.

FAQ

What is the function of the DOFF pin on CY7C2268XV18-633BZXC?

The DOFF (Disable Off) pin selects between two operational modes: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency and full burst optimization; when LOW, it reverts to DDR I-compatible mode with 1-cycle latency. This pin is sampled at power-up and remains latched until reset - it does not support dynamic mode switching during operation.

How is on-die termination (ODT) configured and enabled?

ODT is enabled only during write operations and disabled during reads. Configuration requires connecting ZQ to a precision resistor (175–350 Ω) to ground and setting the ODT pin to HIGH (for RQ/1.66 range) or LOW (for RQ/3.33 range). The selected range determines termination resistance for DQ[17:0], BWS[1:0], K, and K inputs - no external resistors are needed.

Can CQ and CQ be used as system clock sources?

No - CQ and CQ are echo clocks derived from K/K and intended solely for data capture timing. They are free-running, phase-locked to K/K, and lack jitter specifications or drive capability for distribution as system clocks. Their sole purpose is to provide edge-aligned timing references for sampling DQ[17:0] outputs without board-level skew compensation.

What is the role of the LD (Load) signal in burst operation?

LD is a synchronous strobe sampled on the rising edge of K that initiates each two-word burst transaction. When LD goes LOW, the current address and R/W state are latched, triggering internal address decode and pipeline sequencing. It must meet specified setup/hold times relative to K - unlike asynchronous CE, LD defines the precise start point of every burst, enabling deterministic timing in pipelined controllers.

CY7C2268XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2268XV18-633BZXC FAQ

1.How can I place an order for CY7C2268XV18-633BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2268XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2268XV18-633BZXC reliable?

The price and inventory of CY7C2268XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2268XV18-633BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2268XV18-633BZXC transactions.

Note: Certain payment methods may incur a processing fee.

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CY7C2268XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2268XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2268XV18-633BZXC?

For technical support, including CY7C2268XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2268XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C2268XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C2268XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2268XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C2268XV18-633BZXC?

All CY7C2268XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2268XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2268XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C2268XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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