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Cypress Semiconductor Corp CY7C2270KV18-550BZXI

Part No.:
CY7C2270KV18-550BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C2270KV18-550BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:120

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Product details

Overview

CY7C2270KV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit synchronous pipelined DDR II+ SRAM configured as 1M × 36, operating at 550 MHz with 2.5-cycle read latency when DOFF = HIGH, supporting 1100 MT/s data transfer via double-data-rate interface, and featuring on-die termination (ODT), echo clocks (CQ/CQ), and QVLD for precise high-speed memory interfacing in networking line cards.

For engineers reviewing the CY7C2270KV18 datasheet, CY7C2270KV18 pinout, CY7C2270KV18 application, or CY7C2270KV18 equivalent, key selection considerations include its 1M × 36 organization, HSTL I/O compatibility, 1.8 V core / 1.4–1.8 V I/O supply range, PLL-based timing accuracy, and FBGA-165 package constraints for dense PCB layouts.

Technical Context

This device implements a two-word burst architecture with synchronous pipelined addressing: addresses are latched on alternate rising edges of K/K, while write data is registered on both K and K rising edges. Read data is driven on both clock edges with strict alignment to echo clocks CQ/CQ and validated by QVLD.

The DDR II+ architecture supports dual latency modes-2.5-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW)-and integrates ODT for D[35:0], BWS[3:0], and K/K inputs, eliminating external termination resistors. Core logic uses a PLL for accurate data placement and relies on ZQ calibration for output impedance matching (0.2 × RQ).

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 36 Mbit (1M × 36), enabling single-chip 36-bit wide memory interfaces without depth expansion
Max Clock Frequency 550 MHz - defines maximum sustained bandwidth of 1100 MT/s in DDR mode
Read Latency 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable timing trade-off between throughput and access delay
I/O Voltage Range VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V memory subsystems
Core Supply VDD = 1.8 V ± 0.1 V - tight regulation required for stable SRAM cell operation and timing margin
On-Die Termination Configurable ODT for D[35:0], BWS[3:0], K/K - reduces board routing complexity and signal integrity risk
Package 165-ball FBGA (13 × 15 × 1.4 mm) - fine-pitch, thermally efficient package for high-density routing

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus Transfers 36-bit words on both K and K rising edges; tri-stated during deselect; shares pins with write inputs
K / K Differential input clocks Rising edges latch all synchronous inputs and drive outputs; K used for address/control, both used for data
CQ / CQ Output echo clocks Free-running, edge-aligned copies of K/K; simplify system-level data capture without per-device skew compensation
QVLD Valid data indicator Asserted synchronously with CQ/CQ edges to unambiguously mark valid read data windows
ODT On-die termination control Selects ODT resistance range (RQ/3.33 or RQ/1.66) based on external ZQ resistor; floating defaults to high range
ZQ Impedance calibration reference Connects to precision resistor to ground; sets output driver impedance to 0.2 × RQ for matched trace termination
LD Load strobe Latches address and R/W on K rising edge; initiates burst transaction; requires setup/hold relative to K
BWS[3:0] Byte write select Active-low signals controlling 9-bit byte lanes (BWS0–BWS3); enable partial writes without read-modify-write

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 2× versus single-word SRAMs, lowering EMI and routing congestion
Programmable read latency (1 or 2.5 cycles) Enables system-level optimization: low-latency mode for control-plane buffers, high-throughput mode for data-plane FIFOs
HSTL-compatible I/O with variable drive strength Ensures signal integrity across long traces in backplane applications without external level-shifting or buffering
JTAG 1149.1 test access port Supports boundary-scan testing and in-system diagnostics without requiring additional test fixtures or probes
Synchronous self-timed writes Eliminates external write pulse timing constraints; internal logic guarantees write completion within defined clock windows

Applications

High-Speed Network Line Cards Telecom Packet Buffers

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet switch ASIC interfaces.

IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM acting as first-level packet buffer with deterministic 2.5-cycle read response.

Use Value: Enables full-line-rate packet processing using 36-bit aligned data paths and echo-clock–synchronized capture.

Use Scenario: Buffering variable-length VoIP packets in media gateway controllers with strict jitter tolerance.

IC Role / Device Role / Timing Role: Synchronous pipelined memory providing jitter-free data staging between TDM and packet domains.

Use Value: QVLD and CQ/CQ alignment eliminate setup/hold violations across multi-SRAM channel designs.

Test Equipment Pattern Memory Industrial Real-Time Controllers

Use Scenario: Storing high-resolution stimulus/response patterns in automated test equipment (ATE) digital I/O channels.

IC Role / Device Role / Timing Role: Burst-access SRAM delivering deterministic 1100 MT/s data streams synchronized to system clock domain.

Use Value: On-die termination and HSTL I/O ensure clean signal edges at 550 MHz, reducing pattern corruption risk.

Use Scenario: Holding motion control trajectory tables and sensor fusion coefficients in CNC machine controllers.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting hard real-time loop execution with sub-microsecond latency predictability.

Use Value: Configurable 1-cycle latency mode (DOFF = LOW) meets worst-case interrupt response deadlines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C2268KV18 Same architecture and pinout, but 2M × 18 (18-bit bus width); identical timing, voltage, and feature set Requires two devices for 36-bit data path; increases board area and power vs. single CY7C2270KV18 Select when 18-bit interface width matches existing bus architecture or when depth expansion is preferred over width scaling
AS7C362000B-15JIN 36-Mbit QDR-II+ SRAM (1M × 36), 500 MHz max, no ODT, no QVLD, different pinout (165-BGA but incompatible ball map) Lacks echo clocks and valid-data signaling; requires external termination and more complex capture logic Consider only if ODT and QVLD are not required and layout allows for redesign to accommodate non-drop-in footprint

Compared with CY7C2268KV18, CY7C2270KV18 delivers identical performance in a single 36-bit package, avoiding inter-device skew; versus AS7C362000B-15JIN, it provides superior signal integrity features (ODT, QVLD, CQ/CQ) essential for >500 MHz system integration.

Availability

CY7C2270KV18 is available at Aetrix Electronics and suitable for high-speed network line cards, telecom packet buffers, ATE pattern memory, and industrial real-time controllers requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C2270KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the full legacy SRAM portfolio, including DDR II+ and QDR families, with global manufacturing, quality systems, and long-term product support.

CY7C2270KV18 belongs to Infineon's high-performance synchronous SRAM product line, engineered specifically for deterministic, low-jitter memory interfacing in infrastructure equipment where bandwidth, timing precision, and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C2270KV18?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency; when LOW or tied to VSS, it reverts to DDR I mode with 1-cycle latency. This is a static configuration pin sampled at power-up and must remain stable during operation to avoid timing violations.

How does on-die termination (ODT) work on CY7C2270KV18?

ODT is enabled via the ODT pin and calibrated using the external ZQ resistor. A LOW on ODT selects RQ/3.33 termination (175–350 Ω range); HIGH selects RQ/1.66 (175–250 Ω). ODT applies to D[35:0], BWS[3:0], and K/K inputs, eliminating need for discrete termination resistors and improving signal integrity at 550 MHz.

Can CY7C2270KV18 be used with a 1.5 V I/O supply?

Yes - VDDQ supports 1.4 V to 1.8 V, explicitly including 1.5 V operation. The device's HSTL-compatible I/O buffers are designed for this range, and DC/AC specifications in the datasheet (Rev. *I) are validated down to 1.4 V, ensuring reliable interface with 1.5 V FPGA or ASIC I/O banks.

What is the role of the QVLD signal in system timing?

QVLD is a synchronous output that pulses high in alignment with CQ and CQ edges to indicate exactly when DQ[35:0] data is valid. It eliminates guesswork in capture timing, allowing receivers to latch data on the same clock edge that asserts QVLD - critical for robust operation across temperature, voltage, and process corners in high-speed systems.

CY7C2270KV18-550BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C2270KV18-550BZXI FAQ

1.How can I place an order for CY7C2270KV18-550BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C2270KV18-550BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C2270KV18-550BZXI reliable?

The price and inventory of CY7C2270KV18-550BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C2270KV18-550BZXI is usually 5 days.

3.What payment methods are accepted for CY7C2270KV18-550BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C2270KV18-550BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C2270KV18-550BZXI?

CY7C2270KV18-550BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C2270KV18-550BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C2270KV18-550BZXI?

For technical support, including CY7C2270KV18-550BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C2270KV18-550BZXI requirements.

6.How does Aetrix verify that CY7C2270KV18-550BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C2270KV18-550BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C2270KV18-550BZXI meets industry standards.

7.What is the process for return or replacement of CY7C2270KV18-550BZXI?

All CY7C2270KV18-550BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C2270KV18-550BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C2270KV18-550BZXI part is unused and in its original packaging.

Return procedure for CY7C2270KV18-550BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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